A Buried-Channel WNx/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System

1995 ◽  
Author(s):  
Kazuya NISHIHORI ◽  
Atsushi KAMEYAMA ◽  
Yoshiaki KITAURA ◽  
Yoshiko IKEDA ◽  
Masami NAGAOKA ◽  
...  
2010 ◽  
Vol 66 (2) ◽  
pp. 177-187 ◽  
Author(s):  
Peter Harrington ◽  
Sudipto Chakraborty ◽  
Bertan Bakkaloglu

2018 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Hisatsugu Kato ◽  
Yoichi Ishizuka ◽  
Kohei Ueda ◽  
Shotaro Karasuyama ◽  
Atsushi Ogasahara

This paper proposes a design technique of high power efficiency LLC DC-DC Converters for Photovoltaic Cells. The secondary side circuit and transformer fabrication of proposed circuit are optimized for overcoming the disadvantage of limited input voltage range and, realizing high power efficiency over a wide load range of LLC DC-DC converters. The optimized technique is described with theoretically and with simulation results. Some experimental results have been obtained with the prototype circuit designed for the 80 - 400 V input voltage range. The maximum power efficiency is 98 %.


2009 ◽  
Vol 30 (9) ◽  
pp. 095015
Author(s):  
Zheng Ran ◽  
Wei Tingcun ◽  
Wang Jia ◽  
Gao Deyuan

2013 ◽  
Vol 114 (12) ◽  
pp. 123101 ◽  
Author(s):  
Yu-Fan Chang ◽  
Yu-Chian Chiu ◽  
Hao-Wen Chang ◽  
Yi-Siang Wang ◽  
Yi-Lun Shih ◽  
...  

Author(s):  
Mantas Sakalas ◽  
Niko Joram ◽  
Frank Ellinger

Abstract This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .


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