Periodic Coulomb oscillation in highly doped Si single-electron transistor

2003 ◽  
Author(s):  
Tetsuya Kitade ◽  
Kensaku Ohkura ◽  
Anri Nakajima
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation

Evaluation of Room-Temperature Performance of Ultra-Small Single-Electron Transistor-Based Analog-to-Digital Convertors

2018 ◽  
Vol 27 (14) ◽  
pp. 1850217 ◽  
Author(s):  
Mostafa Miralaie ◽  
Ali Mir
Keyword(s):  
Coulomb Blockade ◽  
Room Temperature ◽  
Periodic Oscillation ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Analog To Digital ◽  
Coulomb Oscillation ◽  
Temperature Operating ◽  
Coulomb Blockade Regime ◽  
Oscillation Characteristics

In this paper, in order to analyze the performance of single-electron transistor (SET)-based analog-to-digital converter (ADC) circuits at room temperature, first, the quantum Coulomb blockade regime is explained and based on it we calculate and discuss the inherent Coulomb oscillation characteristics of room-temperature-operating SETs (or, in other words, ultra-small SETs). Then, to explain the performance of SET-based ADC structures, we explore the sensitivity of converter section of these structures to the inherent periodic oscillation characteristics. By simulating two different temperatures of 100[Formula: see text]K and 300[Formula: see text]K, we demonstrate that for proper performance of converter section of the SET-based ADCs, SETs must have inherent Coulomb oscillations with the same and high peak-to-valley current ratio (PVCR) and equal Coulomb peak spacing (i.e., equal [Formula: see text]. The Coulomb oscillation characteristics of the room-temperature-operating silicon SET show the Coulomb oscillations with unequal PVCRs and unequal Coulomb peak spacings (i.e., unequal [Formula: see text]. As a result, it can be seen that the room-temperature-operating SET-based ADCs never have a suitable output.

Nanoscale Electron-Beam Processes and Its Application to Nanodevices

1999 ◽  
Vol 584 ◽  
Author(s):  
Masanori Komuro
Keyword(s):  
Electron Beam ◽  
Line Width ◽  
Metal Layer ◽  
Hydrocarbon Contamination ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Line Edge Roughness ◽  
Coulomb Oscillation ◽  
Metal Insulator Metal ◽  
Space Pattern

AbstractIn this paper, electron beam (EB) lithography and direct processes are summarized for application to nanometer-scale electron devices such as single electron transistor. As decreasing line width in lithography, the delineated patterns has fluctuation of line width, which is so-called line-edge-roughness. It is kwon that such a roughness is caused by aggregates of resist molecules. Therefore to avoid the rougphness to make smooth line edge, we have to use rather low molecular weight resist materials. As one of such candidates, EB exposure characteristics of thermally oxidized SiO2 film are described. Although the sensitivity of the resist is about a few C/cm2 which is lower than conventional resists, it is possible to delineate fine line and space pattern with 15 nm pitch and 5 nm width. This technique is extended to make miniature metal/insulator/metal junctions using SiO2/Si bilayer resist system and the following metal liftoff process. Metal layer is directly deposited on SiO2 substrates in WF6 gas ambient simultaneously with EB irradiation. The resistivity of the deposited film is about 6×10/4 Ωcm depending on hydrocarbon contamination of the substrate itself. We can make the deposited lines with line-width of about 10 nm using 3 nm diameter of the incident EB. From current-voltage characteristics for single tunnel junctions with various tunnel resistances, the barrier height is estimated to be about 0.2 eV. This result indicates clearly the junction properties can be controlled at least with the accuracy of minimum deflection increment of the EB system used here. It is successfully observed that single-electron-transistor produced by EB-induced deposition exhibits Coulomb oscillation at temperature of 230 K.

The suppression of Coulomb oscillation in a normal-ferromagnet-normal metal single-electron transistor

2000 ◽  
Vol 284-288 ◽  
pp. 1794-1795
Author(s):  
Jinhee Kim ◽  
Sangchul Oh ◽  
Ju-Jin Kim ◽  
Jeong-O Lee ◽  
Jong Wan Park ◽  
...  
Keyword(s):  
Normal Metal ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation

ROOM-TEMPERATURE SINGLE ELECTRON DEVICES BY SCANNING PROBE PROCESS

2000 ◽  
Vol 10 (01) ◽  
pp. 83-91
Author(s):  
KAZUHIKO MATSUMOTO
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Pulse Mode ◽  
Memory Bias ◽  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation ◽  
Single Electron Devices ◽  
Oscillation Characteristics

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the period of 2.1 V at room temperature. A single electron memory exhibited a hysteresis loop as the memory bias was scanned from 0 to 10 V and then back down to 0 V.

scholarly journals Some physical results of single electron transitor

2018 ◽  
Vol 1 (6) ◽  
pp. 206-213
Author(s):  
Minh Hoang Le ◽  
Hien Sy Dinh
Keyword(s):  
Research Area ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Feature Size ◽  
Coulomb Oscillation ◽  
Quantum Device ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Coulomb Staircase

Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated.

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

2021 ◽  
Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava
Keyword(s):  
Gas Sensor ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Toxic Gas
Sign in / Sign up

Export Citation Format

Share Document