scholarly journals Some physical results of single electron transitor

2018 ◽  
Vol 1 (6) ◽  
pp. 206-213
Author(s):  
Minh Hoang Le ◽  
Hien Sy Dinh
Keyword(s):  
Research Area ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Feature Size ◽  
Coulomb Oscillation ◽  
Quantum Device ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Coulomb Staircase

Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated.

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

2019 ◽  
Vol 11 (12) ◽  
pp. 1261-1265
Author(s):  
Seyed Norollah Hedayat ◽  
Seyedeh Sahar Hedayat
Keyword(s):  
Electron Tunneling ◽  
Structural Parameters ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Quantum Current ◽  
New Type

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 15-25
Author(s):  
Hien Sy Dinh
Keyword(s):  
Green Function ◽  
Function Method ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

scholarly journals Symmetry selected quantum dynamics of few electrons in nanopillar transistors

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yue-Min Wan ◽  
Heng-Tien Lin
Keyword(s):  
Quantum Number ◽  
Quantum Dynamics ◽  
Three Dimensional ◽  
Single Electron ◽  
Electron Hole ◽  
Current Voltage ◽  
Weak Symmetry ◽  
Current Voltage Characteristics ◽  
The One

AbstractStudy on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the Nth electron excited in the central box ∼8.5 × 8.5 × 3 nm3 and the Nth tunnel peak is not in the one-to-one correspondence to suggest that the total number N of electrons is not the best quantum number for characterizing the quality of single electron tunnel in a three-dimensional quantum box transistor. Instead, we find that the best number is the sub-quantum number nz of the conduction z channel. When the number of electrons in nz is charged to be even and the number of electrons excited in the nx and ny are also even at two, the adding of the third electron into the easy nx/ny channels creates a weak symmetry breaking in the parity conserved x-y plane to assist the indirect tunnel of electrons. A comprehensive model that incorporates the interactions of electron-electron, spin-spin, electron-phonon, and electron-hole is proposed to explain how the excited even electrons can be stabilized in the electric-field driving channel. Quantum selection rules with hierarchy for the ni (i = x, y, z) and N = Σni are tabulated to prove the superiority of nz over N.

scholarly journals Charge-state assignment of nanoscale single-electron transistors from their current–voltage characteristics

Nanoscale ◽  
2019 ◽  
Vol 11 (31) ◽  
pp. 14820-14827 ◽  
Author(s):  
Bart Limburg ◽  
James O. Thomas ◽  
Jakub K. Sowa ◽  
Kyle Willick ◽  
Jonathan Baugh ◽  
...  
Keyword(s):  
Charge State ◽  
Liquid Nitrogen ◽  
Single Molecule ◽  
Single Electron ◽  
Single Electron Transistors ◽  
State Assignment ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electron Transistors ◽  
Single Molecule Transistor

The charge state of a single-molecule transistor can be determined at liquid nitrogen temperatures by simply observing the IV characteristics.

Periodic Coulomb oscillation in highly doped Si single-electron transistor

2003 ◽  
Author(s):  
Tetsuya Kitade ◽  
Kensaku Ohkura ◽  
Anri Nakajima
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation
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