Ultra Low-dielectric-constant Materials for 65nm Technology Node and Beyond

2004 ◽  
Vol 812 ◽  
Author(s):  
Hao Cui ◽  
Darren Moore ◽  
Richard Carter ◽  
Masaichi Eda ◽  
Peter Burke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Pore Characteristics ◽  
Hydrogenated Silicon ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Etch Stop ◽  
Low Dielectric Constant Materials

AbstractPore characteristics including pore size distribution, porosity, and pore interconnectivity of PECVD SiCOH inter- layer dielectric (ILD) materials with different dielectric constant (κ) values have been studied. Oxygen plasma damage to SiCOH low-κ films increases dramatically as the κ value decreases. Simulations showed that, compared to the ILD film, the overhead dielectric films have a significant impact on the overall effective κ (κeff) of the BEOL interconnects. Reducing the κ values of these overhead films helps to alleviate the pressure on the κ value requirement of the ILD materials while still meeting the κeff target. Ultra low-κ (ULK) PECVD hydrogenated silicon carbide (H:SiC) films with a κ of 3.0 have been studied for the etch-stop applications. Studies of the chemical composition and bonding structure suggest that less Si-C networκs are formed and more micro-porosity are incorporated in the ULK H:SiC film. The leakage current of the ULK H:SiC film is found to be about 5 times lower than the H:S iC and H:SiCN films with higher κ values. The etch rate of ULK H:SiC film using a standard SiCOH ILD etch chemistry has been found to be negligible. Such an extremely high etch selectivity maκes these films very good etch-stop layers.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Curing Process Window and Thermal Stability of Porous MSQ-Based Low-Dielectric-Constant Materials

2004 ◽  
Vol 151 (6) ◽  
pp. F146 ◽  
Author(s):  
Shou-Yi Chang ◽  
Tzu-Jen Chou ◽  
Yung-Cheng Lu ◽  
Syun-Ming Jang ◽  
Su-Jien Lin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Process Window ◽  
Curing Process ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Thermal Stability Of

Low Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates

1996 ◽  
Vol 443 ◽  
Author(s):  
Neil H. Hendricks
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Process Integration ◽  
Electrical Performance ◽  
Low Dielectric Constant ◽  
Status Report ◽  
Structure Property ◽  
Chemical Structures ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

AbstractFor over two years, intensive efforts at SEMATECH and elsewhere have focused on identifying low dielectric constant (low ε) materials which possess all of the required properties and processing characteristics needed for integration into standard IC fabrication lines. To date, no material candidate has been shown to satisfy this impressive list of requirements. For some candidates, drawbacks related to material properties such as poor thermal stability or electrical performance have been identified; in other cases, problems in process integration, for example difficulties in patterning have stalled progress.In this paper, most of the current leading candidates for the low ε IC IMC application are identified and discussed. An attempt is made to correlate structure/property relationships in these materials with their relative attributes and deficiencies as they relate to the IMD application. Key differences in chemistry and property/processing characteristics are contrasted for low c silicon-oxygen polymers and for purely organic polymers. Novel dielectrics such as porous organic and inorganic thin films are also discussed in terms of their properties and associated process integration challenges. Since the needs for global planarization and low c IMD are occurring within roughly the same generation of minimum feature size (˜ 0.25 μm), the chemical mechanical polishing (CMP) of low dielectric constant thin films and/or of SiO2 layers deposited above them is briefly discussed. Both subtractive metalization and damascene processes are included, and the required low dielectric constant film properties and processing characteristics are contrasted for each process. Finally, the author's views on future trends in low dielectric constant materials development are presented, with an emphasis on identifying the types of chemical structures which may prove viable for this most demanding of all polymer film applications.

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