Lock-in pixel using a Current-assisted photonic demodulator Implemented in 0.6μm Standard CMOS

2006 ◽  
Author(s):  
Ward van der Tempel ◽  
Daniel Van Nieuwenhove ◽  
Riemer Grootjans ◽  
Maarten Kuijk
Keyword(s):  
Lock In ◽  
A Current

Realizing Dynamic Thermal Laser Stimulation by Lock-in IR-OBIRCH Assisted with a Current Detection Probe Head

2013 ◽  
Author(s):  
Chunlei Wu ◽  
Suying Yao
Keyword(s):  
Operating Condition ◽  
Laser Stimulation ◽  
Detection Probe ◽  
Novel Method ◽  
Lock In ◽  
Current Detection ◽  
Parametric Failure ◽  
A Current ◽  
Probe Head

Abstract Lock-in IR-OBIRCH analysis, as a kind of static thermal laser stimulation (S-TLS) technique, is very effective to isolate a fault for the parametric failure cases. However, its capability is limited to localize a defect when the IC is operated under a defined operating condition. Whereas the dynamic thermal laser stimulation (D-TLS) technique is good at locating a fault while the IC is operated under some functions to activate the failure. In this paper, a novel method is presented to realize DTLS just by Lock-in IR-OBIRCH assisted with a Current Detection Probe Head. Two cases are studied to demonstrate the effectiveness of this method.

A Current Comparator Based Four-Terminal Impedance Bridge

2012 ◽  
Vol 241-244 ◽  
pp. 752-757 ◽  
Author(s):  
Yun Jing Wang ◽  
Zheng Wei Qu ◽  
Xiao Chuan Hu
Keyword(s):  
Double Helix ◽  
Magnetomotive Force ◽  
Current Comparator ◽  
Selective Amplifier ◽  
Feedback Networks ◽  
Lock In ◽  
Relative Differences ◽  
Ac Resistance Standard ◽  
A Current ◽  
Impedance Bridge

This paper presents a current comparator based four-terminal impedance bridge for quantity-value dissemination of national AC resistance standard in China. In order to enhance the feedback adjustment ability and simplify the balance process, the bridge applies a frequency selective amplifier instead of feedforward and feedback networks to balance the magnetomotive force of the current comparator. The resistance difference between the measured and standard resistor can be calculated according to their voltage difference indicated by a digital lock-in amplifier. The AC/DC resistance relative differences between Double Helix Resistor and Tinsley standard resistor are measured with the proposed bridge under 1592Hz.

Lock-in Pixel Using a Current-Assisted Photonic Demodulator Implemented in 0.6 µm Standard Complemetary Metal–Oxide–Semiconductor

2007 ◽  
Vol 46 (4B) ◽  
pp. 2377-2380 ◽  
Author(s):  
Ward van der Tempel ◽  
Daniel Van Nieuwenhove ◽  
Riemer Grootjans ◽  
Maarten Kuijk
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Lock In ◽  
A Current

Resolving Crystallites in Zirconium Oxide Films

1969 ◽  
Vol 27 ◽  
pp. 140-141
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscope ◽  
Inelastic Scattering ◽  
Zirconium Oxide ◽  
Oxide Films ◽  
Optic Axis ◽  
Objective Lens ◽  
Microscope Objective ◽  
Linear Optic ◽  
A Current ◽  
Microscope Objective Lens

The optic axis of an electron microscope objective lens is usually assumed to be straight and co-linear with the mechanical center. No reason exists to assume such perfection and, indeed, simple reasoning suggests that it is a complicated curve. A current centered objective lens with a non-linear optic axis when used in conjunction with other lenses, leads to serious image errors if the nature of the specimen is such as to produce intense inelastic scattering.

Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

1970 ◽  
Vol 28 ◽  
pp. 456-457
Author(s):  
L. E. Murr ◽  
G. Wong
Keyword(s):  
Single Crystal ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Rate ◽  
Flash Evaporation ◽  
Optimum Load ◽  
Single Crystal Films ◽  
Crystal Films ◽  
A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

Novel magneto-optical recording materials: Bi-substituted garnet films

1991 ◽  
Vol 49 ◽  
pp. 776-777
Author(s):  
Takao Suzuki ◽  
Hossein Nuri
Keyword(s):  
Grain Size ◽  
Amorphous Film ◽  
Nitrogen Atmosphere ◽  
Optical Recording ◽  
Garnet Film ◽  
Media Noise ◽  
Garnet Films ◽  
Order Of Magnitude ◽  
A New Technique ◽  
A Current

For future high density magneto-optical recording materials, a Bi-substituted garnet film ((BiDy)3(FeGa)5O12) is an attractive candidate since it has strong magneto-optic effect at short wavelengths less than 600 nm. The signal in read back performance at 500 nm using a garnet film can be an order of magnitude higher than a current rare earth-transition metal amorphous film. However, the granularity and surface roughness of such crystalline garnet films are the key to control for minimizing media noise.We have demonstrated a new technique to fabricate a garnet film which has much smaller grain size and smoother surfaces than those annealed in a conventional oven. This method employs a high ramp-up rate annealing (Γ = 50 ~ 100 C/s) in nitrogen atmosphere. Fig.1 shows a typical microstruture of a Bi-susbtituted garnet film deposited by r.f. sputtering and then subsequently crystallized by a rapid thermal annealing technique at Γ = 50 C/s at 650 °C for 2 min. The structure is a single phase of garnet, and a grain size is about 300A.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

Rem Study of Current Effect on the Structure of Clean Si(111) Surface

1990 ◽  
Vol 48 (1) ◽  
pp. 306-307
Author(s):  
A. Yamanaka ◽  
H. Ohse ◽  
K. Yagi
Keyword(s):  
The Other ◽  
Current Direction ◽  
Clean Surface ◽  
Current Effect ◽  
Atomic Steps ◽  
Step Bunching ◽  
Terrace Width ◽  
Step Down ◽  
A Current

Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].

A highly stable CoMo2S4/Ni3S2 heterojunction electrocatalyst for efficient hydrogen evolution

2021 ◽  
Author(s):  
Minmin Wang ◽  
Mengke Zhang ◽  
Wenwu Song ◽  
Weiting Zhong ◽  
Xunyue Wang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Current Density ◽  
A Current

A CoMo2S4/Ni3S2 heterojunction is prepared with an overpotential of only 51 mV to drive a current density of 10 mA cm−2 in 1 M KOH solution and ∼100% of the potential remains in the ∼50 h chronopotentiometric curve at 10 mA cm−2.

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