High-frequency Characteristics and Effective Saturation Electron Velocity of AlGaN/GaN Heterojunction Field Effect Transistors with AlN or SiN Passivation

2008 ◽  
Author(s):  
N. Tanaka ◽  
Y. Sumida ◽  
H. Kawai ◽  
T. Suzuki
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Frequency Characteristics ◽  
Electron Velocity ◽  
Effective Saturation ◽  
Heterojunction Field Effect Transistors

High-frequency equivalent circuits of junction-gate field-effect transistors

1970 ◽  
Vol 6 (18) ◽  
pp. 590
Author(s):  
P.U. Calzolari ◽  
S. Graffi ◽  
A. Mazzone
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Equivalent Circuits

scholarly journals Polythiophene–perylene diimide heterojunction field-effect transistors

2013 ◽  
Vol 1 (13) ◽  
pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Perylene Diimide ◽  
Heterojunction Field Effect Transistors

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

scholarly journals Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effects ◽  
Electrical Stress ◽  
Heterojunction Field Effect Transistors
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