Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach

1996 ◽  
Vol 43 (9) ◽  
pp. 1387-1393 ◽  
Author(s):  
Shiao-Shien Chen ◽  
J.B. Kuo
Keyword(s):  
Threshold Voltage ◽  
Double Gate ◽  
Short Channel ◽  
Short Channel Effect ◽  
Fully Depleted ◽  
Channel Effect ◽  
Deep Submicrometer ◽  
Threshold Voltage Model

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

2008 ◽  
Vol 55 (9) ◽  
pp. 2512-2516 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
G. Pananakakis ◽  
G. Ghibaudo
Keyword(s):  
Threshold Voltage ◽  
Double Gate ◽  
Short Channel ◽  
Threshold Voltage Model

Interface Interstitial Recombination Rate and the Reverse Short Channel Effect

1999 ◽  
Vol 568 ◽  
Author(s):  
M.E. Rubin ◽  
S. Saha ◽  
J. Lutze ◽  
F. Nouri ◽  
G. Scott ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Recombination Rate ◽  
Gate Oxide ◽  
Two Dimensional ◽  
Short Channel ◽  
Short Channel Effect ◽  
Mos Capacitor ◽  
Enhanced Diffusion ◽  
Channel Effect ◽  
Additional Nitrogen

ABSTRACTExperiment shows that the reverse short channel effect (RSCE) in nMOS devices is critically impacted by the inclusion of nitrogen in the gate oxide. A higher concentration of nitrogen results in a lessened RSCE, i.e. more threshold voltage rolloff for smaller gate lengths. We propose that the additional nitrogen reduces the interstitial recombination rate at the interface, resulting in a smaller interstitial flux and therefore less transient enhanced diffusion (TED) of boron to that interface. To test this hypothesis, we simulate boron redistribution in one and two dimensional MOS capacitor structures, as well as full nMOS devices. We then present simulations calibrated to a 0.2 pim technology currently in production.

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