Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

2013 ◽  
Author(s):  
K. Shiraishi ◽  
M.Y. Yang ◽  
S. Kato ◽  
M. Araidai ◽  
K. Kamiya ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Change Memory

ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"

2020 ◽  
pp. 42-46
Author(s):  
Г.Я. Красников ◽  
О.М. Орлов ◽  
В.В. Макеев
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Ferroelectric Memories ◽  
Change Memory

Мемристорная резистивная память с произвольным доступом (ReRAM, Resistive Random Access Memory) вместе с памятью с изменением фазового состояния (PCM, Phase Change Memory), магниторезистивной памятью с произвольным доступом (MRAM, Magnetoresistive Random Access Memory), сегнетоэлектрической памятью (FeRAM, Ferroelectric Memories) [4] являются востребованными видами энергонезависимой памяти на новых альтернативных принципах. Нитрид кремния является перспективным резистивным переключающим слоем для мемристоров. В данной работе проведено экспериментальное исследование эффекта переключения и переноса заряда в мемристоре на основе нитрида кремния для разных типов металла (Ni, Co, Cu) верхнего электрода.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

2011 ◽  
Vol 6 (3-4) ◽  
pp. 227-236 ◽  
Author(s):  
S. A. Kozyukhin ◽  
A. A. Sherchenkov ◽  
V. M. Novotortsev ◽  
S. P. Timoshenkov
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Memory

Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory

2011 ◽  
Vol 14 (2) ◽  
pp. H103 ◽  
Author(s):  
Shih-Cheng Chen ◽  
Ting-Chang Chang ◽  
Shih-Yang Chen ◽  
Hung-Wei Li ◽  
Yu-Ting Tsai ◽  
...  
Keyword(s):  
Chromium Oxide ◽  
Carrier Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism

Effect of Charge Injection on the Conducting Filament of Valence Change Anatase TiO2 Resistive Random Access Memory Device

2021 ◽  
Vol 12 (7) ◽  
pp. 1876-1884
Author(s):  
Mousam Charan Sahu ◽  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Sanjeev K. Gupta ◽  
Rajeev Ahuja ◽  
...  
Keyword(s):  
Random Access ◽  
Charge Injection ◽  
Random Access Memory ◽  
Memory Device ◽  
Resistive Random Access Memory ◽  
Anatase Tio2 ◽  
Access Memory ◽  
Conducting Filament ◽  
Valence Change

scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

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