scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"

2020 ◽  
pp. 42-46
Author(s):  
Г.Я. Красников ◽  
О.М. Орлов ◽  
В.В. Макеев
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Ferroelectric Memories ◽  
Change Memory

Мемристорная резистивная память с произвольным доступом (ReRAM, Resistive Random Access Memory) вместе с памятью с изменением фазового состояния (PCM, Phase Change Memory), магниторезистивной памятью с произвольным доступом (MRAM, Magnetoresistive Random Access Memory), сегнетоэлектрической памятью (FeRAM, Ferroelectric Memories) [4] являются востребованными видами энергонезависимой памяти на новых альтернативных принципах. Нитрид кремния является перспективным резистивным переключающим слоем для мемристоров. В данной работе проведено экспериментальное исследование эффекта переключения и переноса заряда в мемристоре на основе нитрида кремния для разных типов металла (Ni, Co, Cu) верхнего электрода.

scholarly journals Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

2019 ◽  
Vol 66 (7) ◽  
pp. 1715-1718 ◽  
Author(s):  
Stefan Petzold ◽  
S. U. Sharath ◽  
Jonas Lemke ◽  
Erwin Hildebrandt ◽  
Christina Trautmann ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Heavy Ion ◽  
Access Memory ◽  
Ion Radiation Effects ◽  
Heavy Ion Radiation

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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