ИССЛЕДОВАНИЕ ЭФФЕКТА ПЕРЕКЛЮЧЕНИЯ И ТРАНСПОРТА ЗАРЯДА В БЕСФОРМОВОЧНОМ МЕМРИСТОРЕ НА ОСНОВЕ НИТРИДА КРЕМНИЯ С РАЗНЫМИ ТИПАМИ МЕТАЛЛА ВЕРХНЕГО ЭЛЕКТРОДА, "Электронная техника. Серия 3. Микроэлектроника"

2020 ◽  
pp. 42-46
Author(s):  
Г.Я. Красников ◽  
О.М. Орлов ◽  
В.В. Макеев
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory ◽  
Ferroelectric Memories ◽  
Change Memory

Мемристорная резистивная память с произвольным доступом (ReRAM, Resistive Random Access Memory) вместе с памятью с изменением фазового состояния (PCM, Phase Change Memory), магниторезистивной памятью с произвольным доступом (MRAM, Magnetoresistive Random Access Memory), сегнетоэлектрической памятью (FeRAM, Ferroelectric Memories) [4] являются востребованными видами энергонезависимой памяти на новых альтернативных принципах. Нитрид кремния является перспективным резистивным переключающим слоем для мемристоров. В данной работе проведено экспериментальное исследование эффекта переключения и переноса заряда в мемристоре на основе нитрида кремния для разных типов металла (Ni, Co, Cu) верхнего электрода.

The optimization effect of titanium on the phase change properties of SnSb4 thin films for phase change memory applications

CrystEngComm ◽  
2020 ◽  
Vol 22 (30) ◽  
pp. 5002-5009
Author(s):  
Zihan Zhao ◽  
Sicong Hua ◽  
Xiao Su ◽  
Bo Shen ◽  
Sannian Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Change Memory

Titanium-doped SnSb4 phase-change thin film has been experimentally investigated for phase-change random access memory (PCRAM) use.

Phase-change-memory materials based on system chalcogenides and their application in phase-change random-access memory

2011 ◽  
Vol 6 (3-4) ◽  
pp. 227-236 ◽  
Author(s):  
S. A. Kozyukhin ◽  
A. A. Sherchenkov ◽  
V. M. Novotortsev ◽  
S. P. Timoshenkov
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Change Memory

scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

Enhancing the Lifetime of a Phase Change Memory with Bit-Flip Reversal

2020 ◽  
Vol 29 (14) ◽  
pp. 2050219
Author(s):  
Bhukya Krishna Priya ◽  
N. Ramasubramanian
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Random Access ◽  
Data Encryption ◽  
Access Memory ◽  
Promising Alternative ◽  
Desirable Feature ◽  
Benchmark Suite ◽  
Bit Flip ◽  
Change Memory

Phase Change Memory (PCM) has evolved as a promising alternative over Dynamic Random Access Memory (DRAM) in terms of cell density and leakage power. While non-volatility is a desirable feature, it gives rise to the possibility of the data being present even after the power is switched off. To secure the data, encryption is normally done by using the standard Advanced Encryption Standard (AES) algorithm. Encrypting the data results in huge number of bit-flips, which reduces the lifetime of a PCM. The proposed method increases the lifetime of PCM by reducing the number of bit-flips occurred due to the encryption of modified words only and leaving the unmodified words as they are. The generated encrypted text, which is written by using the bit-flips reversal method, reduces the number of cells involved in writing by approximately 25%. This method is implemented by using Gem5 simulator and is evaluated with splash2 benchmark suite. It is observed that the proposed method improves the lifetime of a PCM memory by 15% without consuming extra power.

Improving the Lifetime of Phase Change Memory by Shadow Dynamic Random Access Memory

2021 ◽  
Vol 12 (2) ◽  
pp. 154-168
Author(s):  
Bhukya Krishna Priya ◽  
N. Ramasubramanian
Keyword(s):  
Energy Consumption ◽  
Phase Change Memory ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Process Variations ◽  
Low Energy ◽  
Access Memory ◽  
Low Energy Consumption ◽  
Change Memory

Emerging NVM are replacing the conventional memory technologies due to their huge cell density and low energy consumption. Restricted writes is one of the major drawbacks to adopt PCM memories in real-time environments. The non-uniform writes and process variations can damage the memory cell with intensive writes, as PCM memory cells are having restricted write endurance. To prolong the lifetime of a PCM, an extra DRAM shadow memory has been added to store the writes that comes to the PCM and to level out the wearing that occurs on the PCM. An extra address directory will store the address of data written to the DRAM and a counter is used to count the number of times the blocks are written into. Based upon the counter values, the data will be written from DRAM to the PCM. The data is written to the DRAM from the PCM, based on the data requirement. Experimental results show the reduction in overall writes in a PCM, which in turn improves the lifetime of a PCM by 5% with less hardware and power overhead.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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