scholarly journals Electronic Behaviour of Schottky Diodes Fabricated from Electroplated CdSe Semiconductors

2018 ◽  
pp. 1-8
Author(s):  
O. I. Olusola ◽  
T. Ewetumo ◽  
T. A. Obagade ◽  
K. D. Adedayo
Keyword(s):  
Electronic Device ◽  
Schottky Diodes ◽  
Measurement Techniques ◽  
Excellent Performance ◽  
Device Structure ◽  
Doping Density ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rectification Factor ◽  
Gold Metal

The fabrication of Schottky diodes using electroplated n- type CdSe thin films and gold metal contact have been successfully achieved. The electronic properties of the fabricated diodes with the device structure glass/FTO/n-CdSe/Au have been investigated by current-voltage (I-V) and capacitance-voltage (CV) measurement techniques. The I-V characteristics revealed a good rectifying behaviour with an ideality factor of 1.50, a potential barrier height (ϕb) >0.79 eV and rectification factor (RF) surpassing 102 at 1.0 V. Results from the C-V measurement showed that the fabricated Schottky diodes have doping density of ~1.61 × 1017 cm-3 and a built-in potential (Vbi) of 0.24 V which falls in the range of reported Vbi values for Schottky diodes. Both I-V and C-V parameters revealed that the CdSe Schottky diodes possess qualities for excellent performance in electronics circuit or as an electronic device.  

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Schottky Diodes ◽  
Substrate Bias ◽  
Rf Plasmas ◽  
Ecr Plasma ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Etch Rates

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

Electrical Characterisation of Epitaxial (100) CoSi2/Si Contacts Obtained Using a Ti/Co Bilayer

1993 ◽  
Vol 320 ◽  
Author(s):  
A. Lauwers ◽  
A. Vercaemst ◽  
M. Van Hove ◽  
K. Kyllesbech Larsen ◽  
R. Verbeeck ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Low Temperature ◽  
Solid State Reaction ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bimetallic Layer ◽  
Temperature Resistivity

ABSTRACTIn this paper the electrical properties of epitaxial CoSi2 on Si obtained by solid-state reaction of a Ti/Co bimetallic layer are investigated. Low temperature resistivity, magnetoresistance and Hall data are presented. The CoSi2ISi Schottky diodes are characterised by current - voltage and capacitance - voltage measurements at temperatures varying between - 100°C and 60°C.

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

2011 ◽  
Vol 679-680 ◽  
pp. 453-456
Author(s):  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto ◽  
Edvige Celasco ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Structural Evolution ◽  
Schottky Contacts ◽  
Power Losses ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Power Densities

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

Thermally Stable Schottky Contacts TO n-GaN

1998 ◽  
Vol 512 ◽  
Author(s):  
H. S. Venugopalan ◽  
S. E. Mohney
Keyword(s):  
Schottky Diodes ◽  
Schottky Contacts ◽  
Thermally Stable ◽  
Short Term ◽  
Barrier Heights ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe barrier heights of Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The elemental Ni contacts were also investigated for comparison. The Ni/Ga/Ni and Re diodes were stable on short term annealing up to 700 °C. It was also shown that the Ni/Ga/Ni (84 at% Ni, 16 at% Ga) diodes were more stable than Ni diodes. This work provides the first demonstration of Schottky diodes to n-GaN that are stable upon annealing at 700 °C.

Electrical Properties of Schottky Junctions on homoepitaxial flame grown diamond

1992 ◽  
Vol 242 ◽  
Author(s):  
J.W. Glesener ◽  
A.A. Morrish ◽  
K.A. Snail
Keyword(s):  
Electrical Properties ◽  
Ohmic Contact ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Turbulent Flame ◽  
Boron Doped Diamond ◽  
Acceptor Concentration ◽  
Boron Doped ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTSchottky diodes were fabricated from boron doped diamond grown in a turbulent flame. The substrates used were type IIa diamond (100) crystals 1.5 mm in diameter and.25 mm thick. A p/p+ structure was deposited using the p+ layer as an ohmic contact. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were made on the finished devices. An ideality factor of 1.8 was obtained from the I-V characteristics. Doping levels from C-V measurements indicate an acceptor concentration on the order of 5 × 1017/cm3.

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