Yield Loss in Sugarcane (Saccharum spp.) Due to Smut Disease in Some Selected Genotypes under Sudan Conditions

2021 ◽  
pp. 92-97
Author(s):  
P. W. Marchelo-d’Ragga
Keyword(s):  
Yield Loss ◽  
Saccharum Spp

Carbón vegetal como mejorador de un Acrisol cultivado con caña de azúcar (Saccharum spp.)

2020 ◽  
Vol 13 (5) ◽  
Author(s):  
Maribel Hernández-Hernández ◽  
David J. Palma-López ◽  
Sergio Salgado-García ◽  
David Julián Palma Cancino ◽  
Joaquín A. Rincón-Ramírez ◽  
...  
Keyword(s):  
Saccharum Spp

Objetivo: Analizar el efecto de la adición de residuos de carbón vegetal sobre las propiedades físicas y químicas de un suelo Acrisol cultivado con caña de azúcar en la sabana de Huimanguillo, Tabasco, México. Diseño/metodología/aproximación: Se utilizaron residuos de carbón vegetal no comercializable, proveniente de la empresa “El Cocoite”, de Villahermosa, Tabasco, México. Para ello se realizó una incubación con los tratamientos: 0, 1.2g, 1.8 g, 2.4 g, 3.0g, 3.6 g, 4.2 g y 4.8 g, de carbón mezclado con 300 g de suelo. Se realizaron dos muestreos, a los 45 y 90 días, en cada muestreo se midió la humedad aprovechable (Ha), densidad aparente (Da), pH (H2O), carbono orgánico (CO), C/N, capacidad intercambió catiónico (CIC), bases intercambiables y acidez intercambiable. Resultados: Se mejoraron las propiedades físicas del suelo, aumentando la Ha y conservando una Da apropiada. Las propiedades químicas del suelo mejoraron y se redujo la acidez intercambiable. Limitaciones/implicaciones del estudio: Los bajos rendimientos en los Acrisoles utilizados para el cultivo de caña de azúcar, suponen una dificultad para la sustentabilidad de esta actividad agrícola de alta importancia económica en el Sureste de México. Hallazgos/conclusiones: Esto ayudaría a mejorar la disponibilidad de nutrientes a la planta en el Acrisol férrico cultivado con caña de azúcar.

La Capacidad infectiva de propágulos de Hongos Micorrizicos Arbusculares en caña de azúcar (Saccharum spp.)

2020 ◽  
Vol 13 (1) ◽  
Author(s):  
Leydi Sánchez-Reyna ◽  
Sergio Salgado-García ◽  
Samuel Cordova Sanchez ◽  
Laura Hernández-Cuevas ◽  
Juan Florencio Gómez-Leyva ◽  
...  
Keyword(s):  
Saccharum Spp ◽  
Sclerocystis Sinuosa

Objetivo: El presente trabajo se realizó con el objetivo de evaluar la capacidad infectiva de propágulos de hongos micorrizicos arbusculares (HMA) en el cultivo de caña de azúcar de la región de la Chontalpa, Tabasco. Diseño/metodología/aproximación: Se realizaron muestreos de rizosfera en los suelos Cambisol Fluvico, pertenecientes al poblado C-28 y Cambisol Endogleyico, pertenecientes al poblado C-20, a una profundidad de 0 a 30 cm para evaluar porcentaje de colonización en raíces, número de esporas en 100 g de suelo y para la clasificación taxonómica de HMA. Resultados: El estado micorrizico del suelo indica que el porcentaje de colonización en raíces fue de 100% en los dos tipos de suelos y 2833±2064 esporas en 100 g del suelo Cambisol Flúvico y 2966±873 esporas en el suelo Cambisol Endogléyico. Se identificaron cuatro especies de HMA Entrophosfora nevadensis, Sclerocystis sinuosa, Funneliformis geosporum y Claroideum glomus luteum. El suelo que presento mayor número de especies fue el Cambisol Endogléyico. En la capacidad infectiva de propágulos de ambos tipos de suelos, la dilución 4² presentó mayor colonización con un 100% de colonización de raíces y la menor colonización en la dilución 4? con 93.0% de colonización. Limitaciones del estudio/implicaciones: Por el periodo o etapa evaluado no permitió la clasificación taxonómica, por lo que, el estudio debe hacerse más a detalle. Hallazgos/conclusiones: No se observaron esporas en esta etapa, por lo cual la clasificación taxonómica no pudo realizarse. Los HMA evaluados tienen un alto potencial para utilizarse en un programa de producción de biofertilizantes.

Elemental chlorine-free bleaching of North American hardwood kraft pulps: Evaluation of oxidant-reinforced extraction variables on overall bleaching optimization

TAPPI Journal ◽  
2013 ◽  
Vol 12 (10) ◽  
pp. 33-41 ◽  
Author(s):  
BRIAN N. BROGDON
Keyword(s):  
Response Surface ◽  
Chlorine Dioxide ◽  
North American ◽  
Yield Loss ◽  
Alkaline Extraction ◽  
Kraft Pulps ◽  
Pulp Bleaching ◽  
Response Surface Models ◽  
Elemental Chlorine ◽  
Surface Models

This investigation evaluates how higher reaction temperatures or oxidant reinforcement of caustic extraction affects chlorine dioxide consumption during elemental chlorine-free bleaching of North American hardwood pulps. Bleaching data from the published literature were used to develop statistical response surface models for chlorine dioxide delignification and brightening sequences for a variety of hardwood pulps. The effects of higher (EO) temperature and of peroxide reinforcement were estimated from observations reported in the literature. The addition of peroxide to an (EO) stage roughly displaces 0.6 to 1.2 kg chlorine dioxide per kilogram peroxide used in elemental chlorine-free (ECF) bleach sequences. Increasing the (EO) temperature by Δ20°C (e.g., 70°C to 90°C) lowers the overall chlorine dioxide demand by 0.4 to 1.5 kg. Unlike what is observed for ECF softwood bleaching, the presented findings suggest that hot oxidant-reinforced extraction stages result in somewhat higher bleaching costs when compared to milder alkaline extraction stages for hardwoods. The substitution of an (EOP) in place of (EO) resulted in small changes to the overall bleaching cost. The models employed in this study did not take into account pulp bleaching shrinkage (yield loss), to simplify the calculations.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

Systematic Defect Identification through Layout Snippet Clustering

2010 ◽  
Author(s):  
Wing Chiu Tam ◽  
Osei Poku ◽  
R. D. (Shawn) Blanton
Keyword(s):  
Design Process ◽  
Integrated Circuit ◽  
Yield Loss ◽  
Defect Identification ◽  
Clustering Techniques ◽  
Dominant Component

Abstract Systematic defects due to design-process interactions are a dominant component of integrated circuit (IC) yield loss in nano-scaled technologies. Test structures do not adequately represent the product in terms of feature diversity and feature volume, and therefore are unable to identify all the systematic defects that affect the product. This paper describes a method that uses diagnosis to identify layout features that do not yield as expected. Specifically, clustering techniques are applied to layout snippets of diagnosis-implicated regions from (ideally) a statistically-significant number of IC failures for identifying feature commonalties. Experiments involving an industrial chip demonstrate the identification of possible systematic yield loss due to lithographic hotspots.

Analysis of Leakage Failures in Flash Memory Devices and Root Cause Identification

2000 ◽  
Author(s):  
J. N. C. de Luna ◽  
M. O. del Fierro ◽  
J. L. Muñoz
Keyword(s):  
Flash Memory ◽  
Electromagnetic Interference ◽  
Yield Loss ◽  
High Amplitude ◽  
Physical Analysis ◽  
Input Buffer ◽  
Automated Test Equipment ◽  
Root Cause ◽  
Root Cause Identification ◽  
Test Process

Abstract An advanced flash bootblock device was exceeding current leakage specifications on certain pins. Physical analysis showed pinholes on the gate oxide of the n-channel transistor at the input buffer circuit of the affected pins. The fallout contributed ~1% to factory yield loss and was suspected to be caused by electrostatic discharge or ESD somewhere in the assembly and test process. Root cause investigation narrowed down the source to a charged core picker inside the automated test equipment handlers. By using an electromagnetic interference (EMI) locator, we were able to observe in real-time the high amplitude electromagnetic pulse created by this ESD event. Installing air ionizers inside the testers solved the problem.

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

1997 ◽  
Author(s):  
J. Douglass ◽  
T. D. Myers ◽  
F. Tsai ◽  
R. Ketcheson ◽  
J. Errett
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Yield Loss ◽  
Process Analysis ◽  
Ion Beam ◽  
Yield Improvement ◽  
Transmission Electron ◽  
Defect Mechanism ◽  
Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

Relationship between Yield Loss and Flooding during Middle and Later Growth Periods in Hybrid Rice

2016 ◽  
Vol 42 (9) ◽  
pp. 1381
Author(s):  
Fu-Xian XU ◽  
Lin ZHANG ◽  
Hong XIONG ◽  
Xing-Bing ZHOU ◽  
Yong-Chuan ZHU ◽  
...  
Keyword(s):  
Yield Loss ◽  
Hybrid Rice

Effects of Harvesting Date on Yield Loss Percentage of Mechanical Harvest and Seed Quality in Rapeseed

2014 ◽  
Vol 40 (4) ◽  
pp. 650
Author(s):  
Qing-Song ZUO ◽  
Hai-Dong HUANG ◽  
Shi CAO ◽  
Shi-Fen YANG ◽  
Qing-Xi LIAO ◽  
...  
Keyword(s):  
Yield Loss ◽  
Seed Quality
Sign in / Sign up

Export Citation Format

Share Document