Extrinsic Base Surface Passivation in High Speed “Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure

2010 ◽  
Vol 27 (5) ◽  
pp. 058502 ◽  
Author(s):  
Liu Hong-Gang ◽  
Jin Zhi ◽  
Su Yong-Bo ◽  
Wang Xian-Tai ◽  
Chang Hu-Dong ◽  
...  
1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi

2020 ◽  
Vol 38 (4) ◽  
pp. 939-945 ◽  
Author(s):  
Yaojiang Chen ◽  
Xuliang Chai ◽  
Zhiyang Xie ◽  
Zhuo Deng ◽  
Ningtao Zhang ◽  
...  

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Stanislav Tserekh ◽  
Igor Ovchinnikov

The article is devoted to the analysis of static and dynamic calculation of the interface of an approach embankment to artificial structures, such as a railway bridge and culverts? the main indicator of the stable operation of an approach embankment to an artificial structure is the stiffness of the base. Calculations are performed in the Midas software package, taking into account the interface of the transition sections from the unfixed roadbed to its fortified part with bored piles and the bridge abutment. A static loading scheme with a C14 time load and a dynamic loading scheme for an approach embankment with a time load from a high-speed train (South Korean KTX20 cars standard norms – 17,335 tons per wheel, 34,67 tons per axle) are considered, and the results are analyzed and compared. The analysis of calculation results is made. The boundary conditions are taken as "Springs on the base surface" – "Ground Surface spring". This function allows you to automatically create elastic or viscous boundary elements that are necessary for performing dynamic calculations. When selecting a grid, boundary conditions are automatically created on the left/right border of the selected grid, and an elastic constant is automatically calculated based on the material properties assigned to the elements. Based on the research, recommendations were made for the development of a detailed model, taking into account the dynamic impact of rolling stock on an artificial structure.


2020 ◽  
Vol 108 ◽  
pp. 103350 ◽  
Author(s):  
Jiakai Li ◽  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Manijeh Razeghi

Author(s):  
N. David Theodore ◽  
Gordon Tam

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.


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