High Current Gain Triple Ion Implanted 4H-SiC BJT

2009 ◽  
Vol 1195 ◽  
Author(s):  
Taku Tajima ◽  
Tadashi Nakamura ◽  
Yuki Watabe ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Current Gain ◽  
High Current ◽  
Extrinsic Base ◽  
Triple Ion ◽  
Ion Implanted

AbstractWe investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

2010 ◽  
Vol 645-648 ◽  
pp. 1065-1067
Author(s):  
Taku Tajima ◽  
Tohru Nakamura ◽  
Y. Watabe ◽  
Masataka Satoh ◽  
Tadashi Nakamura
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Emitter Current ◽  
Junction Transistor ◽  
Extrinsic Base ◽  
Triple Ion ◽  
Ion Implanted

In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

High-Current and Low Acceleration Voltage Arsenic Ion Implanted Polysilicon-Gate and Source-Drain Electrode Si MOS Transistor

1992 ◽  
Vol 279 ◽  
Author(s):  
Yasuyuki Saito ◽  
Yoshiro Sugimura ◽  
Michiyuki Sugihara
Keyword(s):  
Ion Implantation ◽  
Oxide Semiconductor ◽  
Implantation Technique ◽  
High Dose ◽  
High Current ◽  
Single Chip ◽  
Mos Transistor ◽  
Polysilicon Gate ◽  
Acceleration Voltage ◽  
Ion Implanted

ABSTRACTThe fabrication process of high current arsenic (As) ion implanted poly-silicon (Si) gate and source-drain (SD) electrode Si n-channel metal-oxide-semiconductor field-effect-transistor (MOSFET) was examined. Poly-Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose-As implanted poly-Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique. the n-channel poly-Si gate (ps=∼L00ft/o) enhancement MOSFETs(ps-source-drain = =50n/o, SiO2 gate=380A) with off-leak-less were obtained on 3”Czochralski-grown 2Ωcm boron-doped p-type wafers (Osaka titanium). By the same process, a 8-bit single chip μ-processor with 26MHz full operation was performed.

A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer

2005 ◽  
Vol 483-485 ◽  
pp. 905-908 ◽  
Author(s):  
Erik Danielsson ◽  
Martin Domeij ◽  
Hyung Seok Lee ◽  
Carl Mikael Zetterling ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Ohmic Contact ◽  
Base Layer ◽  
Current Gain ◽  
Epitaxial Regrowth ◽  
Extrinsic Base ◽  
Emitter Junction

4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.

A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure

2018 ◽  
Vol 924 ◽  
pp. 625-628
Author(s):  
You Run Zhang ◽  
Wen Wang ◽  
Ming Ye Li ◽  
Fei Guo ◽  
Jun Tao Li ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Surface Recombination ◽  
High Gain ◽  
Base Layer ◽  
Current Gain ◽  
The Novel ◽  
High Current ◽  
Novel Structure ◽  
P Type ◽  
Extrinsic Base

This paper proposes a novel high-gain 4H-SiC BJT structure with a p-type epitaxial layer on top of the extrinsic base layer. The current gain of the novel structure is improved by 140% compared with the conventional one by the simulator tool with the number of reasonable interface traps, which could be ascribed to the epitaxial layer to reduce the surface recombination in the extrinsic base. The process to fabricate this structure is also proposed in the paper.

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

2013 ◽  
Vol 740-742 ◽  
pp. 974-977 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Electric Field ◽  
Ion Implantation ◽  
Field Distribution ◽  
Breakdown Voltage ◽  
Contact Area ◽  
Electric Field Distribution ◽  
Current Gain ◽  
High Current ◽  
High Breakdown Voltage ◽  
Base Contact

Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.

High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE

2008 ◽  
Vol 55 (8) ◽  
pp. 1894-1898 ◽  
Author(s):  
Hyung-Seok Lee ◽  
Martin Domeij ◽  
Reza Ghandi ◽  
Carl-Mikael Zetterling ◽  
Mikael Ostling
Keyword(s):  
Current Gain ◽  
High Current ◽  
Extrinsic Base

Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs

2008 ◽  
Vol 1069 ◽  
Author(s):  
Taku Tajima ◽  
Satoshi Uchiumi ◽  
Kenta Tsukamoto ◽  
Kazumasa Takenaka ◽  
Masataka Satoh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Impurity Concentration ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Injection Level ◽  
Collector Current ◽  
Base Resistance ◽  
Dc Characteristics ◽  
High Base ◽  
Ion Implanted

ABSTRACTDouble ion implanted 4H-SiC bipolar junction transistors (BJTs) are fabricated by Al and N ion implantation to the base and emitter. The current gain of 3 is obtained at the base Al concentration of 1 × ∼ 1017 /cm3. The collector current as a function of the base Gummel number suggests that double ion implanted 4H-SiC BJT operates in the intrinsic region below the emitter in the low injection level. The high base resistance restricts the base current at VBE as low as 3 V.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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