scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8 × 0.8 × 0.4 mm3) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward current-voltage I–V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (ND = 3 × 1015 cm−3). Forward voltage UF = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/°C (with linearity kT &lt; 0.4 % for temperature range of -65 to +85 °C) at supply current IF =1 mA is achieved. The reverse I–V characteristic has high breakdown voltage UBR &gt; 85 V and low leakage current IL &lt; 5 μA at 25 °C and IL &lt; 130 μA at 85 °C (UR = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 °C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

Ohmic and Rectifying Contacts on High Resistivity P-Type Cadmium Telluride

1982 ◽  
Vol 16 ◽  
Author(s):  
A. Musa ◽  
J.P. Ponpon ◽  
M. Hage-Ali
Keyword(s):  
Cadmium Telluride ◽  
Current Flow ◽  
Electrical Characterization ◽  
High Resistivity ◽  
Experimental Conditions ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gold Contact ◽  
P Type ◽  
A Current

ABSTRACTOhmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

SiC planar MOS-Schottky diode: a high voltage Schottky diode with low leakage current

2001 ◽  
Vol 45 (7) ◽  
pp. 1085-1089 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
T.S. Sudarshan
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
High Voltage ◽  
Low Leakage ◽  
Low Leakage Current

Study on Fluidic Gyroscope Zero Temperature Compensation Method

2013 ◽  
Vol 756-759 ◽  
pp. 4225-4228
Author(s):  
Chuan Zhi Mei ◽  
Lin Hua Piao ◽  
Bao Li Zhang
Keyword(s):  
Temperature Sensor ◽  
Output Signal ◽  
Temperature Compensation ◽  
Sensitive Element ◽  
Room Temperature ◽  
Zero Temperature ◽  
Temperature Range ◽  
Working Temperature ◽  
Voltage Variation ◽  
Zero Voltage

This paper had studied on the zero temperature compensation of fluidic gyroscope based on MEMS thermistor. Through the analysis of temperature characteristics of jet gyro sensitive element, two methods of comparison of zero temperature compensation was compared. Then, introduction of SCM and temperature sensor, to achieve zero temperature compensation for gyro output signal. The experiment shows: after compensation, zero voltage variation gyro reduced from 150mV to 10mV, working temperature range from room temperature to-40°C ~+55 °C. The fluidic gyroscope zero temperature compensated with zero drift is low, wide working temperature range advantages.

High Quality Uniform SiC Epitaxy for Power Device Applications

2007 ◽  
Vol 556-557 ◽  
pp. 101-104
Author(s):  
Jie Zhang ◽  
Esteban Romano ◽  
Janice Mazzola ◽  
Swapna G. Sunkari ◽  
Carl Hoff ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Average Deviation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Device Applications ◽  
Abrupt Interface ◽  
P Type ◽  
Highly Uniform ◽  
Controlled Doping ◽  
Better Than

In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis substrates. The same growth conditions for uniform epitaxy also generate smooth surface morphology for the 4° epiwafers. Well controlled doping for both n- and p-type epilayers is obtained. Abrupt interface transition between n- and pdoped layers in a wide doping range is demonstrated. Tight process control for both thickness and doping is evidenced by the data collected from the epi operations. The average deviation from target is 2.5% for thickness and 6% for doping. PiN diodes fabricated on a standard 3-in, 4° epiwafer have shown impressive performance. More than half of the 1 mm2 devices block 1 kV (2.3 MV/cm) with a low leakage current of 1 μA.

scholarly journals Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

2017 ◽  
Vol 897 ◽  
pp. 63-66
Author(s):  
Selsabil Sejil ◽  
Loic Lalouat ◽  
Mihai Lazar ◽  
Davy Carole ◽  
Christian Brylinski ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Current Densities ◽  
P Type ◽  
Electrical Characterizations ◽  
Very High

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

Temperature and Doping Dependency of Piezoresistivity in p-type Silicon

2000 ◽  
Vol 657 ◽  
Author(s):  
Eivind Lund ◽  
Terje G. Finstad
Keyword(s):  
Leakage Current ◽  
Negative Temperature ◽  
Leakage Currents ◽  
Micro Electro Mechanical Systems ◽  
Type Silicon ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Wafer Thickness ◽  
P Type ◽  
Doping Profiles

ABSTRACTWe have performed new measurements of the temperature and doping dependency of the piezoresistive effect in p-type silicon. Piezoresistivity is one of the most common sensing principles of micro-electro-mechanical-systems (MEMS). Our measurements are performed in a specially designed setup based on the well-known 4 point bending technique. The samples are beams of full wafer thickness. To minimize leakage currents and to obtain uniform doping profiles, we have used SIMOX (Separation by IMplantation of OXygen) substrates with resistors defined in an epitaxial layer. Spreading resistance measurements show that the doping profiles are uniform with depth, while measurements of leakage current versus temperature indicate low leakage current. In this paper we present results for the doping concentration range from 1×1017 – 1×1020 cm−3 and the temperature range from –30 to 150 degrees Celsius. The results show a doping dependency of piezoresistivity well described by the current models. The measurements of the temperature dependency of the coefficients of piezoresistivity are compared to a linear model with a negative temperature coefficient whose absolute value decreases with increasing doping.

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

2006 ◽  
Vol 45 (No. 11) ◽  
pp. L319-L321 ◽  
Author(s):  
Norio Tsuyukuchi ◽  
Kentaro Nagamatsu ◽  
Yoshikazu Hirose ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Enhancement Mode ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Effect Transistor ◽  
Gan Heterostructure ◽  
P Type
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