scholarly journals Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kouta Kondou ◽  
Hua Chen ◽  
Takahiro Tomita ◽  
Muhammad Ikhlas ◽  
Tomoya Higo ◽  
...  
Keyword(s):  
Low Power ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Splitting ◽  
Large Momentum ◽  
Electrical Control ◽  
Perpendicular Magnetization ◽  
Out Of Plane ◽  
Magnetic Spin ◽  
Unique Potential

AbstractSpin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn3Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn3Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

scholarly journals Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

2016 ◽  
Vol 108 (8) ◽  
pp. 082406 ◽  
Author(s):  
J.-C. Rojas-Sánchez ◽  
P. Laczkowski ◽  
J. Sampaio ◽  
S. Collin ◽  
K. Bouzehouane ◽  
...  
Keyword(s):  
Hall Effect ◽  
Magnetization Reversal ◽  
Spin Hall Effect ◽  
Perpendicular Magnetization

scholarly journals Photonic spin Hall effect of monolayer black phosphorus in the Terahertz region

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1929-1937 ◽  
Author(s):  
Hai Lin ◽  
Binguo Chen ◽  
Songqing Yang ◽  
Wenguo Zhu ◽  
Jianhui Yu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Black Phosphorus ◽  
Spin Hall Effect ◽  
Spin Splitting ◽  
2D Material ◽  
Terahertz Region ◽  
Incident Plane ◽  
Plane Anisotropy ◽  
High Carrier Mobility ◽  
Light Matter Interaction

AbstractAs a two-dimensional (2D) material, black phosphorus (BP) has attracted significant attention owing to exotic physical properties such as low-energy band gap, high carrier mobility, and strong in-plane anisotropy. The striking in-plane anisotropy is a promising candidate for novel light-matter interaction. Here, we investigate the photonic spin Hall effect (PSHE) on a monolayer of BP. Due to the in-plane anisotropic property of BP, the PSHE is accompanied with Goos-Hänchen and Imbert-Fedorov effects, resulting in an asymmetric spin splitting. The asymmetric spin splitting can be flexibly tuned by the angle between the incident plane and the armchair crystalline direction of BP and by the carrier density via a bias voltage. The centroid displacements of two opposite spin components of the reflected beam along directions parallel and perpendicular to the incident plane can be considered as four independent channels for information processing. The potential application in barcode-encryption is proposed and discussed. These findings provide a deeper insight into the spin-orbit interaction in 2D material and thereby facilitate the development of optoelectronic devices in the Terahertz region.

scholarly journals Diffraction-dependent spin splitting in spin Hall effect of light on reflection

2015 ◽  
Vol 23 (15) ◽  
pp. 18823 ◽  
Author(s):  
Xiaodong Qiu ◽  
Linguo Xie ◽  
Jiangdong Qiu ◽  
Zhiyou Zhang ◽  
Jinglei Du ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Spin Splitting ◽  
Effect Of Light

Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

2020 ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  
Keyword(s):  
Electric Field ◽  
Coupling Effect ◽  
Spin Orbit ◽  
Rashba Effect ◽  
Oxide Interface ◽  
Electrical Control ◽  
Perpendicular Magnetization ◽  
Field Control ◽  
Out Of Plane ◽  
Logic Operations

Abstract Spin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design

2020 ◽  
Author(s):  
K. Cho ◽  
S. K. Thirumala ◽  
X. Liu ◽  
N. Thakuria ◽  
Z. Chen ◽  
...  
Keyword(s):  
Low Power ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Flip Flop

Dynamics of Dzyaloshinskii Domain Walls Driven by Spin Hall Effect in the Presence of Magnetic Fields

SPIN ◽  
2017 ◽  
Vol 07 (01) ◽  
pp. 1740004
Author(s):  
Chengkun Song ◽  
Chendong Jin ◽  
Jianbo Wang ◽  
Qingfang Liu
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Spin Hall Effect ◽  
Micromagnetic Simulations ◽  
Out Of Plane ◽  
Device Applications ◽  
Metal Bilayers ◽  
The Magnetic Field

Current-induced domain wall motion (CIDWM) in perpendicularly magnetized materials exhibits large potential in spintronic device applications. The Dzyaloshinskii domain walls (DWs) are nucleated in ultrathin ferromagnetic/heavy-metal bilayers with high perpendicular magnetocrystalline anisotropy (PMA) in the presence of interfacial Dzyaloshinskii–Moriya interaction (DMI). Here, we investigate the effect of magnetic fields on Dzyaloshinskii DWs driven by spin Hall effect (SHE) by means of micromagnetic simulations. We find that magnetic fields can modify the dynamics of Dzyaloshinskii DW. When applying out-of-plane magnetic fields, the velocity of Dzyaloshinskii DWs increases when the field-driven and current-driven DW motion are in same direction, while it decreases with opposite direction. In the case of in-plane longitudinal magnetic fields, Dzyaloshinskii DW velocity increases when the direction of the magnetic field and Dzyaloshinskii DW propagation direction are same, and it decreases when applying opposite in-plane magnetic fields. These manifestations may offer a new method for manipulating Dzyaloshinskii DWs and promise applications in DW-based nanodevices.

scholarly journals Electric-field control of field-free spin-orbit torque switching via laterally modulated Rashba effect in Pt/Co/AlOx structures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Min-Gu Kang ◽  
Jong-Guk Choi ◽  
Jimin Jeong ◽  
Jae Yeol Park ◽  
Hyeon-Jong Park ◽  
...  
Keyword(s):  
Electric Field ◽  
Coupling Effect ◽  
Spin Orbit ◽  
Rashba Effect ◽  
Oxide Interface ◽  
Electrical Control ◽  
Perpendicular Magnetization ◽  
Field Control ◽  
Out Of Plane ◽  
Logic Operations

AbstractSpin-orbit coupling effect in structures with broken inversion symmetry, known as the Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide structures, along with the spin Hall effect. Electric-field control of the Rashba effect is established for semiconductor interfaces, but it is challenging in structures involving metals owing to the screening effect. Here, we report that the Rashba effect in Pt/Co/AlOx structures is laterally modulated by electric voltages, generating out-of-plane SOTs. This enables field-free switching of the perpendicular magnetization and electrical control of the switching polarity. Changing the gate oxide reverses the sign of out-of-plane SOT while maintaining the same sign of voltage-controlled magnetic anisotropy, which confirms the Rashba effect at the Co/oxide interface is a key ingredient of the electric-field modulation. The electrical control of SOT switching polarity in a reversible and non-volatile manner can be utilized for programmable logic operations in spintronic logic-in-memory devices.

Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5533-5542
Author(s):  
Baozeng Zhou
Keyword(s):  
Hall Effect ◽  
Spin Splitting ◽  
Promising Candidate ◽  
Spintronic Devices ◽  
Spin Direction ◽  
Band Splitting ◽  
Out Of Plane ◽  
Valley Polarization ◽  
Valley Hall Effect ◽  
Spin Fet

Coexistence of Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K′ valleys (out-of-plane spin direction) makes the FRS AgBiP2Te6 monolayer a promising candidate for 2D spin FET and spin/valley Hall effect devices.

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