A comprehensive analytical model for ambipolar transport in nano-dimensional VOPc/p-6P OHJFET for applications in organic electronics

2021 ◽  
Author(s):  
Suleshma Katiyar ◽  
Neha Verma ◽  
Jyotika Jogi
Keyword(s):  
Field Effect Transistor ◽  
High Mobility ◽  
Charge Carrier Density ◽  
Subthreshold Region ◽  
Spatial Charge ◽  
Proposed Model ◽  
Channel Potential ◽  
Source Voltage ◽  
Effect Transistor ◽  
Ambipolar Transport

Abstract This paper presents a compact analytical DC model for high mobility VOPc (vanadyl pthalocyanine)/p-6P (para-sexiphenyl) ambipolar organic heterojunction field-effect transistor (OHJFET). The proposed model accounts for both unipolar and ambipolar regimes of VOPc/p-6P ambipolar OHJFET by considering spatial charge carrier density in the channel. The model incorporates subthreshold conduction phenomenon in addition to describing beyond threshold transport. The model is extended to describe ambipolar regime occurring in subthreshold region at low drain to source voltage, VDS. Device characteristics and various parameters obtained are presented and are further used to model recombination zone and channel potential profile. Results obtained, are compared with available experimental data and a good match is observed.

Semiconductive Behavior of Sb Doped SnO2 Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
K.-O. Grosse-Holz ◽  
J. F. M. Cillessen ◽  
M. W. J. Prins ◽  
P. W. M. Blom ◽  
R. M. Wolf ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Pulsed Laser ◽  
High Mobility ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Charge Carrier Density ◽  
Sno2 Thin Films ◽  
Effect Transistor

AbstractSb doped SnO2 has been deposited on polished ceramic Al2O3 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been measured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped SnO2 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

A modified wrinkle-free MoS2 film transfer method for large area high mobility field-effect transistor

2019 ◽  
Vol 31 (5) ◽  
pp. 055707 ◽  
Author(s):  
Xueyuan Liu ◽  
Kailiang Huang ◽  
Miao Zhao ◽  
Fan Li ◽  
Honggang Liu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Large Area ◽  
Mos2 Film ◽  
Effect Transistor ◽  
Film Transfer ◽  
Transfer Method

Analysis of plasma waves resonant detection for terahertz radiation in high mobility field effect transistor

Optik ◽  
2013 ◽  
Vol 124 (23) ◽  
pp. 6408-6410
Author(s):  
Wenbin Guo ◽  
Caixia Liu ◽  
Liang Shen ◽  
Shengping Ruan
Keyword(s):  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Plasma Waves ◽  
Effect Transistor

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

High mobility field effect transistor of SnOx on glass using HfOx gate oxide

2016 ◽  
Vol 16 (3) ◽  
pp. 300-304 ◽  
Author(s):  
Chanjong Ju ◽  
Chulkwon Park ◽  
Hyeonseok Yang ◽  
Useong Kim ◽  
Young Mo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Gate Oxide ◽  
Effect Transistor

scholarly journals Acoustic phonon scattering in a low density, high mobility AlGaN∕GaN field-effect transistor

2005 ◽  
Vol 86 (25) ◽  
pp. 252108 ◽  
Author(s):  
E. A. Henriksen ◽  
S. Syed ◽  
Y. Ahmadian ◽  
M. J. Manfra ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Field Effect ◽  
Acoustic Phonon ◽  
Field Effect Transistor ◽  
Phonon Scattering ◽  
High Mobility ◽  
Low Density ◽  
Effect Transistor
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