A Discussion of Dielectric Film Deformation by E-Beam Energy

Abstract A recently developed technique known as Electron Beam Induced Resistance Change (EBIRCH) equipped with a scanning electron microscope (SEM) utilizes a constant electron beam (e-beam) voltage across or current through the defect of interest and amplifies its resistance variation. In this study, EBIRCH is applied for a 3D NAND structure device fault isolation but suffered from nearby dielectric film deformation. The characterization of such dielectric deformation and the possible mechanisms of e-beam induced damage are discussed. As well, a threshold condition to avoid from triggering the occurrence of dielectric damage is presented for shallow defect analysis in EBIRCH application.

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High Resolution Electron Beam Induced Resistance Change for Fault Isolation with 100 nm2 Localization

ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2015p0382 ◽

2015 ◽

Author(s):

Brett A. Buchea ◽

Christopher S. Butler ◽

H.J. Ryu ◽

Wen-hsien Chuang ◽

Martin von Haartman ◽

...

Keyword(s):

Electron Beam ◽

High Resolution ◽

Induced Resistance ◽

Fault Isolation ◽

Direct Stimulation ◽

Resistance Change ◽

Isolation Technique ◽

High Resolution Imagery ◽

Defect Isolation ◽

Time Required

Abstract A novel fault isolation technique, electron beam induced resistance change (EBIRCh), allows for the direct stimulation and localization of eBeam current sensitive defects with resolution of approximately 100nm square, continuing a history of beam based failure isolation methods. EBIRCh has been shown to work over a range of defects, significantly decreasing the time required for isolation of shorts through straightforward high resolution imagery, allowing for explicit visual defect isolation with a linear resolution of approximately 10nm. This paper discusses the operational setups for the source and amplifier while performing an EBIRCh scan, describes the processes involved in the Intel test vehicle that was used to test EBIRCh, and provides information on two independent functional theories for EBIRCh that operate in conjunction to a greater or lesser extent depending on the defect type. EBIRCh is expected to improve through-put and resolution on various defect types compared to conventional fault isolation techniques.

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Combining Electron Beam Methods, EBIC and EBAC, with Traditional Approaches for Highly Effective Fault Isolation

ISTFA 2017: Conference Proceedings from the 43rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2017p0456 ◽

2017 ◽

Author(s):

Ryan Fredrickson ◽

Tim Kuebrich ◽

Andrew Le ◽

Derek Snider ◽

Lucas Winiarski

Keyword(s):

Electron Beam ◽

Liquid Crystal ◽

Local Heating ◽

Interesting Case ◽

Fault Isolation ◽

Resistance Change ◽

Cross Sectional ◽

Defect Site ◽

Isolation Techniques ◽

Defect Sites

Abstract Fault isolation is an important initial component of the failure analysis investigation as it provides the first indicator of the defect physical location. The most broadly familiar fault isolation techniques include photoemission microscopy (PEM), optical beam induced resistance change (OBIRCH) and liquid crystal analysis (LCA). Each of these techniques has their own strengths but also drawbacks which can impede the analysis by either not providing a well isolated defect location or causing damage to the defect region. For some types of defects, photoemission and liquid crystal analysis may create local heating of the device which can distort the defect and mask the root cause of the failure. These techniques also rely on optical microscopy which has low resolution compared to the feature size of current technologies. In addition, each technique may not highlight the defect site itself; only pointing the analyst to the defective circuit within the sample. Electron Beam Induced Current (EBIC) and Electron Beam Absorbed Current (EBAC) microscopy provides solutions to these complications. In this paper we describe some very effective approaches by using these beam-based techniques in conjunction with traditional methods. As introduction, we have provided some interesting case studies whereby EBIC/EBAC have been used in conjunction with FIB circuit edits and scan diagnostic results to narrow the defect search areas. We focus the paper on some less common applications of cross sectional EBIC/EBAC as well as utilizing an AC coupled configuration to activate more subtle defect sites. We conclude with two examples where AC coupled cross-sectional EBIC is needed to highlight the cause of the failure.

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Device Dielectric Quality Analysis and Fault Isolation at the Contact Level by Scanning Microwave Impedance Microscopy

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0463 ◽

2016 ◽

Author(s):

Wei-Shan Hu ◽

Jeng-Han Lee ◽

Ming-Hong Kao ◽

Hui-Wen Yang ◽

Peter De Wolf ◽

...

Keyword(s):

Dielectric Film ◽

Gate Oxide ◽

Fault Isolation ◽

Quality Monitoring ◽

Quality Analysis ◽

Device Performance ◽

Analysis Techniques ◽

Impact Device ◽

Electrical Analysis

Abstract Dielectric film quality is one of the most important factors that will greatly impact device performance and reliability. Device level electrical analysis techniques for dielectric quality monitoring are highly needed. In this paper we present results using a new electrical AFM mode, scanning Microwave Impedance Microscopy (sMIM), for characterization of device oxide quality and for fault isolation. Devices with poor oxide quality show sMIM nano C-V and dC/dV hysteresis behavior during forward and reverse bias sweep. The sMIM capacitance sensitivity is below 1 aF allowing one to capture C-V spectra from the MOS structure formed by the gate and gate oxide with excellent signal/noise ratio and observe subtle variations between different sites.

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A very rapid in situ Kikuchi technique to determine relative crystal misorientation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106211 ◽

1988 ◽

Vol 46 ◽

pp. 830-831

Author(s):

J. I. Bennetch

Keyword(s):

Electron Beam ◽

Analytical Techniques ◽

Superplastic Forming ◽

The Other ◽

Kikuchi Pattern ◽

Kikuchi Line ◽

Line Analysis

In a recent study of the superplastic forming (SPF) behavior of certain Al-Li-X alloys, the relative misorientation between adjacent (sub)grains proved to be an important parameter. It is well established that the most accurate way to determine misorientation across boundaries is by Kikuchi line analysis. However, the SPF study required the characterization of a large number of (sub)grains in each sample to be statistically meaningful, a very time-consuming task even for comparatively rapid Kikuchi analytical techniques.In order to circumvent this problem, an alternate, even more rapid in-situ Kikuchi technique was devised, eliminating the need for the developing of negatives and any subsequent measurements on photographic plates. All that is required is a double tilt low backlash goniometer capable of tilting ± 45° in one axis and ± 30° in the other axis. The procedure is as follows. While viewing the microscope screen, one merely tilts the specimen until a standard recognizable reference Kikuchi pattern is centered, making sure, at the same time, that the focused electron beam remains on the (sub)grain in question.

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Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0081 ◽

2009 ◽

Author(s):

E. Hendarto ◽

S.L. Toh ◽

J. Sudijono ◽

P.K. Tan ◽

H. Tan ◽

...

Keyword(s):

Electron Microscope ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Electrical Characterization ◽

Nickel Silicide ◽

Fault Isolation ◽

Technology Nodes ◽

Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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Application of Novel Low Current OBIRCH Amplifier and Nanoprobing to Identify Subtle Leakages in Advanced Node Technologies

10.31399/asm.cp.istfa2018p0303 ◽

2018 ◽

Author(s):

Satish Kodali ◽

Liangshan Chen ◽

Yuting Wei ◽

Tanya Schaeffer ◽

Chong Khiam Oh

Keyword(s):

Signal To Noise Ratio ◽

Semiconductor Industry ◽

Fault Isolation ◽

Ring Oscillator ◽

High Signal ◽

The Novel ◽

Resistance Change ◽

Three Samples ◽

Relative Threshold ◽

First Time

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.

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A Novel OBIRCH Fault Isolation Method to Locate the Leakage Failure Point

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0269 ◽

2008 ◽

Author(s):

Chi-Lin Huang ◽

Yu Hsiang Shu

Keyword(s):

Semiconductor Device ◽

Fault Isolation ◽

Resistance Change ◽

Cross Sectional ◽

Isolation Technique ◽

Isolation Techniques ◽

Atomic Force ◽

Analysis Experiment ◽

Failure Point ◽

Leakage Failure

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.

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Fault Isolation of High Resistance Defects Using Comparative Magnetic Field Imaging

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0009 ◽

2003 ◽

Author(s):

Antonio Orozco ◽

Elena Talanova ◽

Anders Gilbertson ◽

L.A. Knauss ◽

Zhiyong Wang ◽

...

Keyword(s):

Magnetic Field ◽

High Resistance ◽

Integrated Circuit ◽

Time Domain Reflectometry ◽

Fault Isolation ◽

Main Stream ◽

Layer By Layer ◽

Impedance Change ◽

Resistance Change ◽

Require Time

Abstract As integrated circuit packages become more complicated, the localization of defects becomes correspondingly more difficult. One particularly difficult class of defects to localize is high resistance (HR) defects. These defects include cracked traces, delaminated vias, C4 non-wet defects, PTH cracks, and any other package or interconnect structure that results in a signal line resistance change that exceeds the specification of the device. These defects can result in devices that do not run at full speed, are not reliable in the field, or simply do not work at all. The main approach for localizing these defects today is time domain reflectometry (TDR) [1]. TDR sends a short electrical pulse into the device and monitors the time to receive reflections. These reflections can correspond to shorts, opens, bends in a wire, normal interfaces between devices, or high resistance defects. Ultimately anything that produces an electrical impedance change will produce a TDR response. These signals are compared to a good part and require time consuming layer-by-layer deprocessing and comparison to a standard part. When complete, the localization is typically at best to within 200 microns. A new approach to isolating high resistance defects has been recently developed using current imaging. In recent years, current imaging through magnetic field detection has become a main-stream approach for short localization in the package [2] and is also heavily utilized for die level applications [3]. This core technology has been applied to the localization of high resistance defects. This paper will describe the approach, and give examples of test samples as well as results from actual yield failures.

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