scholarly journals Analysis of Triple Quantum Dots Single Electron Transistor (TQD-SET) for Various Configuration

2020 ◽  
Vol 2 (2) ◽  
pp. 56
Author(s):  
Stephanus Hanurjaya ◽  
Miftahul Anwar ◽  
Meiyanto Eko Sulistyo ◽  
Irwan Iftadi ◽  
Subuh Pramono
Keyword(s):  
Quantum Dots ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Single Electron Tunneling ◽  
Triple Quantum Dots ◽  
Working Principle ◽  
Electron Transistors

<p class="Abstract">Single electron transistor (SET) has high potential for the development of quantum computing technologies in order to provide low power consumption electronics. For that purpose, many studies have been conducted to develop SET using dopants as quantum dots (QD). The working principle of SET basically is a single electron tunneling one by one through tunnel junction based on the coulomb blockade effect. This research will simulate various configurations of triple quantum dots single electron transistors (TQD-SET) using SIMON 2.0 with an experimental approach of MOSFET with dopants QD. The configurations used are series, parallel, and triangle configuration. The mutual capacitance (Cm), tunnel junctions (TJ), and temperature values of TQD-SET configurations are varied. The I-V characteristics are observed and analyzed for typical source-drain voltage (Vsd). it is found that the TQD series requires larger Vsd than parallel or triangular TQDs. On the other hands, the current in parallel TQD tends to be stable even though Cm is changed, and the current in the TQD triangle is strongly influenced by the Cm. By comparing these three configurations, it is observed that the tunnelling rate is higher for parallel TQD due to higher probability current moves through three dots by applying Vds.</p>

scholarly journals Modeling and simulation of single-electron transistors

2005 ◽  
Vol 1 (1) ◽  
Author(s):  
Lee Jia Yen ◽  
Ahmad Radzi Mat Isa ◽  
Karsono Ahmad Dasuki
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Inner Work ◽  
Single Electron Tunneling ◽  
Single Electronics ◽  
Electron Transistors ◽  
Discrete Charge

Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits.

scholarly journals COULOMB BLOCKADE IN GRAPHENE QUANTUM DOTS

2012 ◽  
Vol 27 (01) ◽  
pp. 1350008 ◽  
Author(s):  
QIONG MA ◽  
TAO TU ◽  
LI WANG ◽  
CHEN ZHOU ◽  
ZHI-RONG LIN ◽  
...  
Keyword(s):  
Phase Transition ◽  
Quantum Dots ◽  
Line Shape ◽  
Low Temperatures ◽  
Coulomb Blockade ◽  
Electron Tunneling ◽  
Graphene Quantum Dots ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Conductance Spectrum

We study the conductance spectrum of graphene quantum dots, both single- and multiple-dot cases. The single electron tunneling through a graphene dot is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low temperatures are obtained, which are consistent with the recent experimental observations. Further, we discuss the transport behavior when multiple dots are assembled in array and find a phase transition of conductance spectra from individual Coulomb blockade to collective Coulomb blockade.

Quantum Current Modelling of Single Electron Transistors with N Potential Barrier

2019 ◽  
Vol 11 (12) ◽  
pp. 1261-1265
Author(s):  
Seyed Norollah Hedayat ◽  
Seyedeh Sahar Hedayat
Keyword(s):  
Electron Tunneling ◽  
Structural Parameters ◽  
Single Electron ◽  
Tunneling Effect ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Quantum Current ◽  
New Type

The single electron transistor is a new type of switching device that uses controlled electron tunneling to amplify current. In this paper, we focus on some basic device characteristics like, single electron tunneling effect on which this single electron transistor works. In this research, transmission coefficient model of a single electron transistor with quantum dot arrays constraints is checked. Then, the current of the transistor is modeled on quantum dots. Finally, current–voltage characteristic based on quantum transport and structural parameters are analyzed.

A Nanodamascene Process to be used as a Building Block for Nanodevices

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin
Keyword(s):  
High Resolution ◽  
Building Block ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Filling Material ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature

2017 ◽  
Vol 26 (12) ◽  
pp. 1750201
Author(s):  
Hamed Aminzadeh ◽  
Mohammad Ali Dashti ◽  
Mohammad Miralaei
Keyword(s):  
Quantum Dot ◽  
Coulomb Blockade ◽  
Room Temperature ◽  
Symmetric Functions ◽  
Single Electron ◽  
Stable Operation ◽  
Single Electron Transistors ◽  
Analog To Digital ◽  
Temperature Range ◽  
Electron Transistors

Room-temperature analog-to-digital converters (ADCs) based on nanoscale silicon (Si) quantum dot (QD)-based single-electron transistors (SETs) can be very attractive for high-speed processors embedded in future generation nanosystems. This paper focuses on the design and modeling of advanced single-electron converters suited for operation at room temperature. In contrast to conventional SETs with metallic QD, the use of sub-10-nm Si QD results in stable operation at room temperature, as the observable Coulomb blockade regime covers effectively the higher temperature range. Si QD-based SETs are also fully compatible with advanced CMOS technology and they can be manufactured using routine nanofabrication steps. At first, we present the principles of operation of Si SETs used for room-temperature operation. Possible flash-type ADC architectures are then investigated and the design considerations of possible Coulomb oscillation regimes are addressed. A modified design procedure is then introduced for [Formula: see text]-bit SET-based ADCs, and validated through simulation of a 3-bit ADC with a sampling frequency of 5 GS/s. The ADC core is comprised from a capacitive signal divider followed by three periodic symmetric functions (PSFs). Simulation results demonstrate the stability of output signals at the room-temperature range.

Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors

1997 ◽  
Author(s):  
Seiya Kasai ◽  
Yoshihiro Satoh ◽  
Hiroshi Okada ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa
Keyword(s):  
Quantum Dots ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Gate Control ◽  
Electron Transistors

Analysis and Simulation of Coulomb Blockade and Coulomb Diamonds in Fullerene Single Electron Transistors

2018 ◽  
Vol 13 (1) ◽  
pp. 138-143 ◽  
Author(s):  
Vahideh Khadem Hosseini ◽  
Mohammad Taghi Ahmadi ◽  
Saeid Afrang ◽  
Razali Ismail
Keyword(s):  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors
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