scholarly journals The model of degradation of an InGaN/GaN LED during current tests taking into account the inhomogeneous distribution of the defects density in the heterostructure

2021 ◽  
Vol 2103 (1) ◽  
pp. 012177
Author(s):  
I V Frolov ◽  
A M Hodakov ◽  
V A Sergeev ◽  
O A Radaev
Keyword(s):  
Density Distribution ◽  
Direct Current ◽  
Experimental Testing ◽  
Optical Power ◽  
Inhomogeneous Distribution ◽  
Distribution Profile ◽  
Proposed Model ◽  
Gan Led ◽  
Simulation Results

Abstract A model of the optical power degradation of an InGaN/GaN LED during testing under direct current, which takes into account the inhomogeneous distribution of the defects density in the heterostructure, is presented. According to the simulation results, the rate of degradation of the LED optical power significantly depends on the degree of inhomogeneity of the defects density distribution profile. Experimental testing of the model has been carried out. The proposed model makes it possible to predict the rate of degradation of InGaN-based LEDs with varying degrees of inhomogeneity of the defects density distribution profile and can be used to develop a technique for rejecting defective and potentially unreliable LEDs.

FINE-TUNING OF MODELLING STRATEGY TO SIMULATE THERMO-MECHANICAL BEHAVIOUR OF DOUBLE FRICTION PENDULUM SEISMIC ISOLATORS UST ESTIMATOR

2019 ◽  
Vol 3 (Special Issue on First SACEE'19) ◽  
pp. 165-172
Author(s):  
Vincenzo Bianco ◽  
Giorgio Monti ◽  
Nicola Pio Belfiore
Keyword(s):  
Multibody Dynamics ◽  
Mechanical Behaviour ◽  
Mechanical Model ◽  
Dynamic Behaviour ◽  
Experimental Testing ◽  
Fine Tuning ◽  
Proposed Model ◽  
Modelling Techniques ◽  
Friction Pendulum

The use of friction pendulum devices has recently attracted the attention of both academic and professional engineers for the protection of structures in seismic areas. Although the effectiveness of these has been shown by the experimental testing carried out worldwide, many aspects still need to be investigated for further improvement and optimisation. A thermo-mechanical model of a double friction pendulum device (based on the most recent modelling techniques adopted in multibody dynamics) is presented in this paper. The proposed model is based on the observation that sliding may not take place as ideally as is indicated in the literature. On the contrary, the fulfilment of geometrical compatibility between the constitutive bodies (during an earthquake) suggests a very peculiar dynamic behaviour composed of a continuous alternation of sticking and slipping phases. The thermo-mechanical model of a double friction pendulum device (based on the most recent modelling techniques adopted in multibody dynamics) is presented. The process of fine-tuning of the selected modelling strategy (available to date) is also described.

scholarly journals Analytical Investigation of Tension Loaded Deformed Rebar Anchors in Concrete

CivilEng ◽  
2021 ◽  
Vol 2 (2) ◽  
pp. 442-458
Author(s):  
Sandip Chhetri ◽  
Rachel A. Chicchi
Keyword(s):  
Test Data ◽  
Parametric Study ◽  
Failure Modes ◽  
Experimental Testing ◽  
Analytical Investigation ◽  
Failure Behavior ◽  
Capacity Design ◽  
Simulation Results

Experimental testing of deformed rebar anchors (DRAs) has not been performed extensively, so there is limited test data to understand their failure behavior. This study aims to expand upon these limited tests and understand the behavior of these anchors, when loaded in tension. Analytical benchmark models were created using available test data and a parametric study of deformed rebar anchors was performed. Anchor diameter, spacing, embedment, and number of anchors were varied for a total of 49 concrete breakout simulations. The different failure modes of anchors were predicted analytically, which showed that concrete breakout failure is prominent in the DRA groups. The predicted concrete breakout values were consistent with mean and 5% fractile concrete capacities determined from the ACI concrete capacity design (CCD) method. The 5% fractile factor determined empirically from the simulation results was kc = 26. This value corresponds closely with kc = 24 specified in ACI 318-19 and ACI 349-13 for cast-in place anchors. The analysis results show that the ACI CCD formula can be conservatively used to design DRAs loaded in tension by applying a kc factor no greater than 26.

Wear of a Tool in Double-Disk Lapping of Silicon Wafers

2010 ◽  
Author(s):  
Adam Barylski ◽  
Mariusz Deja
Keyword(s):  
Experimental Data ◽  
Integrated Circuits ◽  
Tool Wear ◽  
Silicon Wafers ◽  
Silicon Ingot ◽  
Proposed Model ◽  
Tool Wear Prediction ◽  
Simulation Results ◽  
High Degree ◽  
Kinematical Parameters

Silicon wafers are the most widely used substrates for fabricating integrated circuits. A sequence of processes is needed to turn a silicon ingot into silicon wafers. One of the processes is flattening by lapping or by grinding to achieve a high degree of flatness and parallelism of the wafer [1, 2, 3]. Lapping can effectively remove or reduce the waviness induced by preceding operations [2, 4]. The main aim of this paper is to compare the simulation results with lapping experimental data obtained from the Polish producer of silicon wafers, the company Cemat Silicon from Warsaw (www.cematsil.com). Proposed model is going to be implemented by this company for the tool wear prediction. Proposed model can be applied for lapping or grinding with single or double-disc lapping kinematics [5, 6, 7]. Geometrical and kinematical relations with the simulations are presented in the work. Generated results for given workpiece diameter and for different kinematical parameters are studied using models programmed in the Matlab environment.

Methods of Mathematical Modeling of the Leaching Process of Cobalt-Containing Solutions

2021 ◽  
Vol 316 ◽  
pp. 661-666
Author(s):  
Nataliya V. Mokrova
Keyword(s):  
Mathematical Modeling ◽  
Mathematical Model ◽  
Chemical Kinetics ◽  
Group Method ◽  
Data Handling ◽  
Multistage Processes ◽  
Leaching Process ◽  
Proposed Model ◽  
Simulation Results ◽  
The Mathematical Model

Current cobalt processing practices are described. This article discusses the advantages of the group argument accounting method for mathematical modeling of the leaching process of cobalt solutions. Identification of the mathematical model of the cascade of reactors of cobalt-producing is presented. Group method of data handling is allowing: to eliminate the need to calculate quantities of chemical kinetics; to get the opportunity to take into account the results of mixed experiments; to exclude the influence of random interference on the simulation results. The proposed model confirms the capabilities of the group method of data handling for describing multistage processes.

ACCURATE ANALYSIS OF GLOBAL INTERCONNECTS IN NANO-FPGAs

NANO ◽  
2009 ◽  
Vol 04 (03) ◽  
pp. 171-176 ◽  
Author(s):  
DAVOOD FATHI ◽  
BEHJAT FOROUZANDEH
Keyword(s):  
Propagation Delay ◽  
Modeling Method ◽  
Accurate Analysis ◽  
Proposed Model ◽  
Simulation Results ◽  
The Difference ◽  
A New Technique ◽  
Global Interconnects ◽  
Technology Nodes ◽  
Model Technique

This paper introduces a new technique for analyzing the behavior of global interconnects in FPGAs, for nanoscale technologies. Using this new enhanced modeling method, new enhanced accurate expressions for calculating the propagation delay of global interconnects in nano-FPGAs have been derived. In order to verify the proposed model, we have performed the delay simulations in 45 nm, 65 nm, 90 nm, and 130 nm technology nodes, with our modeling method and the conventional Pi-model technique. Then, the results obtained from these two methods have been compared with HSPICE simulation results. The obtained results show a better match in the propagation delay computations for global interconnects between our proposed model and HSPICE simulations, with respect to the conventional techniques such as Pi-model. According to the obtained results, the difference between our model and HSPICE simulations in the mentioned technology nodes is (0.29–22.92)%, whereas this difference is (11.13–38.29)% for another model.

scholarly journals Adaptive Noise Cancellation of an Analog Fiber Optic Link

2021 ◽  
Author(s):  
Mohammad Nazrul Islam
Keyword(s):  
Optical Fiber ◽  
Fiber Optic ◽  
Signal To Noise Ratio ◽  
Optical Power ◽  
Noise Cancellation ◽  
Adaptive Noise Cancellation ◽  
Fiber Link ◽  
The Mean ◽  
Simulation Results ◽  
Adaptive Noise

There are three dominant noise mechanisms in an analog optical fiber link. These are shot noise that is proportional to the mean optical power, relative intensity noise (RIN) that is proportional to the square of the instanteaneous optical power. This report describes an adaptive noise cancellation of these dominant noise processes that persist an analog optical fiber link. The performance of an analog optical fiber link is analyzed by taking the effects of these noise processes. Analytical and simulation results show that some improvement in signal to noise ratio (SNR) and this filter is effective to remove noise adaptively from the optical fiber link.

scholarly journals Timetable Design for Urban Rail Line with Capacity Constraints

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Yu-Ting Zhu ◽  
Bao-Hua Mao ◽  
Lu Liu ◽  
Ming-Gao Li
Keyword(s):  
Solution Method ◽  
Operating Cost ◽  
Capacity Constraints ◽  
Scheduling Model ◽  
Urban Rail ◽  
Proposed Model ◽  
Rail Line ◽  
First Come First Serve ◽  
Waiting Cost ◽  
Simulation Results

To design an efficient and economical timetable for a heavily congested urban rail corridor, a scheduling model is proposed in this paper. The objective of the proposed model is to find the departure time of trains at the start terminal to minimize the system cost, which includes passenger waiting cost and operating cost. To evaluate the performance of the timetable, a simulation model is developed to simulate the detailed movements of passengers and trains with strict constraints of station and train capacities. It assumes that passengers who arrive early will have more chances to access a station and board a train. The accessing and boarding processes of passengers are all based on a first-come-first-serve basis. When a station is full, passengers unable to access must wait outside until the number of waiting passengers at platform falls below a given value. When a train is full, passengers unable to board must wait at the platform for the next train to arrive. Then, based on the simulation results, a two-stage genetic algorithm is introduced to find the best timetable. Finally, a numerical example is given to demonstrate the effectiveness of the proposed model and solution method.

A New Dislocation-Dynamics Model and Its Application in Thin Film-Substrate Systems

2005 ◽  
Vol 875 ◽  
Author(s):  
E.H. Tan ◽  
L.Z. Sun
Keyword(s):  
Thin Films ◽  
Mechanical Performance ◽  
Dislocation Motion ◽  
Dislocation Dynamics ◽  
Dislocation Segment ◽  
Dislocation Loops ◽  
Dynamics Model ◽  
Proposed Model ◽  
Simulation Results ◽  
Film Substrate

AbstractBased on the physical background, a new dislocation dynamics model fully incorporating the interaction among differential dislocation segments is developed to simulate 3D dislocation motion in crystals. As the numerical simulation results demonstrate, this new model completely solves the long-standing problem that simulation results are heavily dependent on dislocation-segment lengths in the classical dislocation dynamics theory. The proposed model is applied to simulate the effect of dislocations on the mechanical performance of thin films. The interactions among the dislocation loops, free surface and interfaces are rigorously computed by a decomposition method. This framework can be used to simulate how a surface loop evolves into two threading dislocations and to determine the critical thickness of thin films. Furthermore, the relationship between the film thickness and yield strength is established and compared with the conventional Hall-Petch relation.

N-face GaN substrate roughening for improved performance GaN-on-GaN LED

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ezzah Azimah Alias ◽  
Muhammad Esmed Alif Samsudin ◽  
Steven DenBaars ◽  
James Speck ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Ammonium Hydroxide ◽  
Content Type ◽  
Light Emitting ◽  
Gan Led ◽  
Improved Performance ◽  
Substrate Roughening

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

Wideband microstrip dual polarization radiator for X-band APAA

2021 ◽  
Author(s):  
P.L. Batov ◽  
E.N. Gurkin ◽  
S.O. Knyazev ◽  
D.L. Borisevitch
Keyword(s):  
Numerical Simulation ◽  
Antenna Arrays ◽  
Experimental Testing ◽  
Test Sample ◽  
Phased Antenna Arrays ◽  
X Band ◽  
Sample Testing ◽  
Simulation Results ◽  
Gain Loss ◽  
Decoupling Coefficient

In this paper the model and the construction of a wideband microstrip X-band radiator of active phased antenna arrays have been presented. The basic demands to the radiator have been formulated. The results of computer electromagnetic simulation of the radiator in free space and in the infinite array have been given, as well as the results of radiator experimental testing in the waveguide simulator. The characteristics of a proposed radiator such as VSWR, decoupling coefficient and losses have been simulated and estimated experimentally on the test sample. Experiment has shown good agreement with numerical simulation results. Particularly, 20% bandwidth with VSWR no greater than 2 has been achieved. Sample testing in a waveguide simulator gives 0,5 dB loss (active and return loss in radiator without loss in simulator itself). Scan angle at 3 dB gain loss, as it follows from numerical simulation results, should be no less than ±40° or ±45° in the main planes. So, proposed microstrip radiator may be used for X-band active phased arrays, which should work in 20% bandwidth with steerable polarization.

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