scholarly journals Зависимость самоиндукции тонкой цилиндрической проволоки из металла от механизма поверхностного рассеяния электронов

2019 ◽  
Vol 89 (5) ◽  
pp. 643
Author(s):  
Э.В. Завитаев ◽  
К.Е. Харитонов ◽  
А.А. Юшканов
Keyword(s):  
Boundary Conditions ◽  
Free Path ◽  
Surface Defect ◽  
Defect Density ◽  
Angle Of Incidence ◽  
Wire Radius ◽  
Metallic Wire ◽  
Inner Surface ◽  
Electron Free Path ◽  
Surface Defect Density

AbstractThe self-induction of a thin cylindrical metallic wire has been calculated. A general case when the ratio of the electron free path to the wire radius may take an arbitrary value has been considered. The dependence of the regular reflectance on surface defect density and angle of incidence of electrons on the wire’s inner surface has been taken for boundary conditions of the problem.

Controlling the Cytotoxicity of CdSe Magic-Sized Quantum Dots as a Function of Surface Defect Density

Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5452-5457 ◽  
Author(s):  
Anielle Christine Almeida Silva ◽  
Marcelo José Barbosa Silva ◽  
Felipe Andrés Cordero da Luz ◽  
Danielle Pereira Silva ◽  
Samantha Luara Vieira de Deus ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Defect ◽  
Defect Density ◽  
Surface Defect Density

Influence of aspect ratio and surface defect density on hydrothermally grown ZnO nanorods towards amperometric glucose biosensing applications

2017 ◽  
Vol 422 ◽  
pp. 798-808 ◽  
Author(s):  
Mayoorika Shukla ◽  
Pramila ◽  
Tejendra Dixit ◽  
Rajiv Prakash ◽  
I.A. Palani ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Surface Defect ◽  
Defect Density ◽  
Zno Nanorods ◽  
Glucose Biosensing ◽  
Surface Defect Density

Deposition, Defect and Weak Bond Formation Processes in a-Si:H

1998 ◽  
Vol 507 ◽  
Author(s):  
J Robertson ◽  
M J Powell
Keyword(s):  
Hydrogen Evolution Reaction ◽  
Surface Defect ◽  
Defect Formation ◽  
Defect Density ◽  
Bond Formation ◽  
Surface Processes ◽  
Formation Processes ◽  
Weak Bond ◽  
Further Development ◽  
Surface Defect Density

ABSTRACTThe growth of a-Si:H and the resulting weak bond and defect formation mechanism is analysed in terms of the adsorbed Sill3 model of growth. It is found that this model describes the surface processes well, but it needs further development to correctly describe the temperature dependence of the formation of defects and weak bonds, since the surface defect density decreases monotonically with temperature and does not show a minimum near 250C. We show that the experimentally observed increase in hydrogen content, weak bond and defect density at lower deposition temperatures can be accounted for by a hydrogen evolution reaction from H2* sites.

LaTiO2N nanopowders (NPs) with low surface defect density via nitridation of flame made NPs retaining simple perovskite structure

2022 ◽  
Author(s):  
Yoshiyuki Abe ◽  
Richard M. Laine
Keyword(s):  
Optical Absorption ◽  
Absorption Edge ◽  
Perovskite Structure ◽  
Surface Defect ◽  
Defect Density ◽  
Optical Absorption Edge ◽  
Surface Defect Density

LaTiO2N NP synthesized from flame made LaTiO3 NP exhibits less absorption background above the optical absorption edge than that synthesized from flame made La2Ti2O7 NP, suggesting a low surface defect density.

Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth

MRS Advances ◽  
2016 ◽  
Vol 1 (54) ◽  
pp. 3631-3636 ◽  
Author(s):  
Johji Nishio ◽  
Hirokuni Asamizu ◽  
Mitsuhiro Kushibe ◽  
Hidenori Kitai ◽  
Kazutoshi Kojima
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
Surface Defect ◽  
Carrier Lifetime ◽  
Epitaxial Film ◽  
Defect Density ◽  
Growth Parameters ◽  
Thickness Variation ◽  
Power Devices ◽  
Surface Defect Density

ABSTRACT Reduction in background carrier concentration has been investigated for 4H-SiC C-face epitaxial growth in order to be applied for ultra-high voltage power devices. Optimizing epitaxial growth parameters made it possible to achieve 7.6x1013 cm-3 as the background carrier concentration within a whole area of specular 3-inch wafers. In addition to the background carrier concentration reduction, epitaxial film thickness variation, surface defect density and the carrier lifetime have been confirmed to fulfill the requirements for the devices.

Reducing Surface Defects of CrXOY Film in Mid-Frequency Dual-Magnetron Sputtering

2011 ◽  
Vol 291-294 ◽  
pp. 219-222
Author(s):  
Xiang Yu ◽  
Lei Ma ◽  
Yang Liu ◽  
Zhong Zhou Yang ◽  
Hua Meng
Keyword(s):  
Magnetron Sputtering ◽  
Process Parameters ◽  
Surface Defect ◽  
Surface Defects ◽  
Defect Density ◽  
Optimal Parameter ◽  
Parameter Combination ◽  
Surface Defect Density

Influence of the process parameters of a reactive mid-frequency dual-magnetron sputtering on surface defects of CrxOy film was investigated. The forming mechanisms of the observed droplets and craters were analyzed. The optimal parameter combination for accomplishing fewer surface defects was explored; and the optimized process parameters evidently minimized the surface defects of the film. In the condition of the target current of 16 A, the gases pressure of 0.31 Pa, and the bias voltages in a range of -120~-240 V, an optimized CrxOy film has been synthesized with surface defect density low to 78 defect/mm-2.

Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 553-556
Author(s):  
Tetsuo Hatakeyama ◽  
Hiroshi Kono ◽  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Surface Defect ◽  
Defect Density ◽  
Gate Oxide ◽  
Hydrogen Atmosphere ◽  
Scaling Analysis ◽  
Strongly Correlated ◽  
Large Area ◽  
Initial Failure ◽  
Random Failures ◽  
Surface Defect Density

This paper discusses the issues regarding reliability of large-area (up to 9mm2) gate oxide on the C-face of 4H-SiC. We first show that the initial failure in TDDB characteristics of large area gate oxide is strongly correlated with the surface-defect density. Using wafers with low surface-defect density wafers, scaling analysis of the area-dependence of TDDB characteristics has been performed. It has shown that the reliability of a large area gate oxide is dominated by initial and random failures. Further, we have shown that, by optimizing the temperatures of post-oxidation anneal in hydrogen atmosphere, the random failures of TDDB characteristics are substantially reduced.

Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique

2001 ◽  
Vol 664 ◽  
Author(s):  
A.H.M. Smets ◽  
J.H. van Helden ◽  
M.C.M. van de Sanden
Keyword(s):  
Surface Defect ◽  
Surface Defects ◽  
Defect Density ◽  
Surface Region ◽  
Ex Situ ◽  
Density Region ◽  
Dual Beam ◽  
Surface Defect Density ◽  
Absorption Technique ◽  
Cavity Ring Down

ABSTRACTFor the first time it is demonstrated that the surface defect density can be measured using the cavity ring down (CRD) absorption technique and it is shown that CRD is more sensitive for surface defects than dual beam photoconductivity (DBP) technique. Ex situ measurements have shown that the surface defects of the oxidized a-Si:H surface are distributed over a surface region with thickness W(d). The obtained surface defect density is 1.0 × 1012 up to 1.4 × 1012 cm-2. During growth the a-Si:H surface defect density region has at least a thickness of 15 nm. During deposition of 15 nm a-Si:H the surface density increases up to a not yet saturated value of 1×1013 cm-2.

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