scholarly journals Texture and magnetic anisotropy of YBa2Cu3O7-x film on MgO substrate

2020 ◽  
Vol 31 (23) ◽  
pp. 21108-21117
Author(s):  
H. Sanchez Cornejo ◽  
L. De Los Santos Valladares ◽  
C. H. W. Barnes ◽  
N. O. Moreno ◽  
A. Bustamante Domínguez
Keyword(s):  
Magnetic Anisotropy ◽  
Film Growth ◽  
Ybco Film ◽  
Hysteresis Loops ◽  
Strong Relationship ◽  
X Ray Diffraction ◽  
Out Of Plane ◽  
Density Values ◽  
Applied Fields ◽  
Mgo Substrate

AbstractThe texture and magnetic anisotropy of a YBa2Cu3O7-x (YBCO) film growth onto a MgO substrate are analyzed in order to understand the relation between them. X-ray diffraction shows the presence of the (00l) reflections from the YBCO layer with a grain’s fraction value 98%. Rocking Curves (RC) measurements reveal an out-of-plane texture with a full width at the half maximum of 0.81°, revealing a high uniaxial texture in the YBCO film. The temperature dependence of the susceptibility measurements obtained under many applied fields along Hext ||c-axis and Hext||ab-plane reveals strong relationship between the uniaxial texture and the magnetic anisotropy, confirming the high ordering of the CuO2 superconducting planes. In addition, the critical current density values are obtained from the hysteresis loops and compared to similar YBCO films with uniaxial and biaxial texture reported elsewhere.

X-ray structural studies of epitaxial yttrium silicide on Si(111)

1994 ◽  
Vol 9 (6) ◽  
pp. 1434-1440 ◽  
Author(s):  
L.J. Martínez-Miranda ◽  
J.J. Santiago-Avilés ◽  
W.R. Graham ◽  
P.A. Heiney ◽  
M.P. Siegal
Keyword(s):  
Unit Cell Volume ◽  
Film Growth ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Correlation Lengths ◽  
X Ray ◽  
Lattice Constants ◽  
Glancing Angle ◽  
Out Of Plane ◽  
The Mean

We performed a series of glancing angle and reflection x-ray diffraction experiments to study both the in-plane and out-of-plane structure of epitaxial YSi2−x films grown on Si(111), with thicknesses ranging from 85 Å to 510 Å. These measurements allowed us to characterize the mean film lattice constants, the position correlation lengths of the film, and the presence and extent of strain as a function of film thickness. We find that the strain along the basal plane increases as a function of increasing thickness to approximately 1% in the 510 Å film; the corresponding out-of-plane strain is such that the film unit cell volume increases as a function of thickness. The corresponding in-plane microscopic strain varies from 0.5% for the 85 Å film to 0.3% for the 510 Å film. We relate our results to the mode of film growth and the presence of pinholes in the films.

YBCO FILMS DOPING WITH SZO PARTICLES GROWN BY CHEMICAL SOLUTION DEPOSITION

2009 ◽  
Vol 23 (17) ◽  
pp. 3532-3537
Author(s):  
MIN LIU ◽  
DONGQI SHI ◽  
QI LI ◽  
LIN WANG ◽  
SHUAI YE ◽  
...  
Keyword(s):  
Ybco Film ◽  
Low Cost ◽  
Pinning Force ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Ybco Films ◽  
X Ray ◽  
Metal Organic ◽  
Increasing Temperature ◽  
Applied Fields

YBa 2 Cu 3 O 7-δ ( YBCO ) films with SrZrO 3 ( SZO ) doping have been prepared successfully by a non-vacuum, low cost, and easily scalable metal–organic deposition method, and their microstructures and physical properties were investigated. From the analysis of x-ray diffraction and φ-scan results, the doped films had sharp biaxial textures. Although the doped YBCO film had a wider critical temperature transition width than that of the un-doped YBCO film, the critical current density, J c , was significantly enhanced under applied fields as compared to the un-doped film. Furthermore, the ratio of J c , doped to J c , un-doped became gradually larger with increasing temperature and magnetic field, indicating that an effective pinning force was created by SZO doping. These results clearly demonstrate that there are appealing prospects for applications of the doped film in high magnetic fields and temperatures.

scholarly journals Structure and Magnetization of Strontium Hexaferrite (SrFe12O19) Films Prepared by Pulsed Laser Deposition

2021 ◽  
Vol 8 ◽  
Author(s):  
M. Khojaste khoo ◽  
P. Kameli
Keyword(s):  
Pulsed Laser Deposition ◽  
Quantum Interference ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Laser Deposition ◽  
Strontium Hexaferrite ◽  
X Ray Diffraction ◽  
Oriented Growth ◽  
X Ray ◽  
Out Of Plane

M-type strontium hexaferrite (SrM) thin films show excellent magnetic properties and uniaxial magnetic anisotropy. We systematically investigated the magnetism of SrM films prepared by pulsed-laser deposition on different substrates [Al2O3 (11¯02), SrTiO3 (100), ZnO (0001), and LiNbO3 (0001)] at vacuum (10−4 Pa) and a substrate temperature of 800°C. Prepared films were annealed in air at a temperature of 1,000°C for 2 hours. This investigation determined the effect of annealing and different substrates on the morphology, strain, and hysteresis loops of the films. The prepared films were characterized using x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, and superconducting quantum interference device (SQUID) magnetometry. X-ray diffraction analyses confirmed c-oriented growth along the out-of-plane direction in most films. We found that annealing causes enhanced crystallization in films and a significant increase in coercivity. The highest coercivity of ∼11 KOe was measured for the film deposited on the Al2O3 (11¯02) substrate.

Microstructure of artificial 45° [001] tilt grain boundaries in YBCO films grown on (001) MgO

1996 ◽  
Vol 54 ◽  
pp. 372-373
Author(s):  
Y. Huang ◽  
B.V. Vuchic ◽  
D.B. Buchholz ◽  
K.L. Merkle ◽  
R.P.H. Chang
Keyword(s):  
Grain Boundaries ◽  
Film Growth ◽  
Ybco Film ◽  
Weak Link ◽  
Ion Beam ◽  
Magnetic Field Measurement ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
Potential Applications ◽  
Tilt Boundaries

It is well known that high-angle grain boundaries in YBa2Cu3O7−x (YBCO) show weak-link effects and behave as Josephson junctions. This kind of grain boundary junction (GBJ) has potential applications in magnetic field measurement and electronic devices. This work studies the microstructure of artificially made GBJs in YBCO films on (001) MgO and the mechanism of the boundary formation, with the goal to improve the GBJ quality and obtain a better understanding of the junctions’ transport properties.Ion-sputter-induced epitaxy is used to form YBCO films with isolated 45° [001] tilt grain boundaries. Prior to YBCO film growth the (001) MgO substrate is selectively sputtered by a low energy Ar ion beam. A portion of the substrate remains non-sputtered by protecting the surface with a patterned photoresist mask. After removing the mask, a YBCO film is grown on the substrate using pulsed organometallic molecular beam epitaxy (POMBE). Under suitable conditions single crystal YBCO c-axis films can be reproducibly obtained in both the sputtered and non-sputtered regions. The orientation between the films and the substrate has been examined by both x-ray diffraction and electron diffraction. The in-plane orientation relation is [110]YBCO//[100]MgO on the non-sputtered epitaxially polished MgO and [100]YBCO//[100]MgO on the sputtered MgO. Thus, 45° tilt boundaries are formed in the film at the boundary between the sputtered and non-sputtered substrate regions.

An ultrahigh-vacuum chamber for surface X-ray diffraction

1998 ◽  
Vol 5 (3) ◽  
pp. 890-892 ◽  
Author(s):  
C. L. Nicklin ◽  
J. S. G. Taylor ◽  
N. Jones ◽  
P. Steadman ◽  
C. Norris
Keyword(s):  
Vacuum Chamber ◽  
Film Growth ◽  
Layer Structure ◽  
Ultrahigh Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auger Signal ◽  
Out Of Plane ◽  
Plane Detector

An ultrahigh-vacuum environmental chamber for surface X-ray diffraction on Station 9.4 at the Synchrotron Radiation Source, Daresbury Laboratory, is described. Film growth can be monitored by simultaneously recording the Auger signal and the X-ray intensity at a particular point in reciprocal space. Such in situ measurements are essential for understanding the dynamic processes that occur during adsorption. An example is given in which the specularly reflected X-ray signal is correlated with Auger plots, during growth of Tl on Cu(001). In addition, the diffractometer and chamber combination allow large reconstructions to be investigated as shown by the in-plane structural analysis of the c(4×4) InSb surface. A study of the layer structure of Cr on Ag(001), in which an extended out-of-plane detector assembly was used, is also presented.

CeO2 Thin Films as Buffer Layers for Si/YBCO Integrated Microelectronics

2003 ◽  
Vol 768 ◽  
Author(s):  
Elena Tresso ◽  
V. Ballarini ◽  
A. Chiodoni ◽  
R. Gerbaldo ◽  
G. Ghigo ◽  
...  
Keyword(s):  
Film Growth ◽  
Ybco Film ◽  
Annealing Treatment ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Properties Of Superconductors

AbstractThe unique properties of superconductors such as radiation hardness and high microwave performances [1-3] make the integration with semiconductor conventional electronics a stimulating challenge. Many attempts have been tried to obtain good quality YBa2Cu3O7-x (YBCO) films on Si substrates, with the aim of taking advantage from the properties of both materials, but interdiffusion reactions and a poor lattice and thermal expansion coefficient matching require the use of a buffer layer at the semiconductor/superconductor interface. Yttria-stabilized zirconia (YSZ), Y2O3, MgO, SrTiO3, CeO2 and their combinations have been proposed and used as buffer layers in the case of Si/YBCO systems. In this paper we report on annealing treatments performed on Si/CeO2 bilayers. A set of optimized samples with deposition temperatures ranging from 100°C to 800°C has been radiatively heated at two different annealing temperatures, in N2 and O2 atmospheres. All the samples have been characterized by X-ray diffraction, Atomic Force Microscopy, micro-Raman spectroscopy. The preferential grain orientation, the lattice parameter, the crystals dimensions, the surface roughness have been studied. As a preliminary tentative, we report on YBCO film growth on the top of CeO2/Si optimized bi-layer before undergoing annealing treatment. This YBCO film resulted to be a-axis preferential oriented, with some contribution of c-axis oriented grains.

scholarly journals Influence of CuO addition on dielectric and piezoelectric properties of (Bi0.5Na0.5)TiO3–BaTiO3lead-free piezoceramics

2021 ◽  
pp. 2140004
Author(s):  
M. Difeo ◽  
L. Ramajo ◽  
M. Castro
Keyword(s):  
Hysteresis Loops ◽  
Solid State Reaction Method ◽  
Sem Analysis ◽  
Sintering Behavior ◽  
X Ray Diffraction ◽  
Conventional Solid State Reaction ◽  
Doping Effects ◽  
Density Values ◽  
Spectroscopy Studies ◽  
Ferroelectric Hysteresis

Doping effects of CuO on the sintering behavior and electrical properties of 0.94(Bi[Formula: see text]Na[Formula: see text]TiO3–0.06(BaTiO[Formula: see text]–[Formula: see text]CuO (BNT–BT6–[Formula: see text]Cu) lead-free piezoceramic obtained by the conventional solid-state reaction method were investigated. Regarding the undoped system, it is already known that it presents the best densification values when it is sintered at 1150[Formula: see text]C, however, the doped system was sintered at 1150[Formula: see text]C, 1100[Formula: see text]C, 1050[Formula: see text]C, 1025[Formula: see text]C, and 975[Formula: see text]C to determine the effect of Cu on the densification process. Therefore, it was obtained that the CuO-doped samples sintered at 1050[Formula: see text]C presented the highest density values and therefore were the ones chosen to perform the characterization tests together with the undoped system. The samples were characterized using X-ray diffraction (XRD), Raman microspectroscopy, and scanning electron microscopy (SEM) analysis, whereas the ferroelectric and dielectric properties were evaluated by means of ferroelectric hysteresis loops and impedance spectroscopy studies. As a result, the addition of CuO allowed an improvement in sinterability and densification, with the subsequent grain growth, and the improvement of the piezoelectric coefficient ([Formula: see text].

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

Realizing large out-of-plane magnetic anisotropy in L10-FeNi films grown by nitrogen-surfactant epitaxy on Cu(001)

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
Kaishu Kawaguchi ◽  
Toshio Miyamachi ◽  
Takushi Iimori ◽  
Yuki Takahashi ◽  
Takuma Hattori ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Out Of Plane

scholarly journals Route towards efficient magnetization reversal driven by voltage control of magnetic anisotropy

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Roxana-Alina One ◽  
Hélène Béa ◽  
Sever Mican ◽  
Marius Joldos ◽  
Pedro Brandão Veiga ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Random Access ◽  
Low Power Consumption ◽  
Surface Anisotropy ◽  
Magnetization Dynamics ◽  
Storage Density ◽  
Switching Regime ◽  
Major Interest ◽  
Out Of Plane

AbstractThe voltage controlled magnetic anisotropy (VCMA) becomes a subject of major interest for spintronics due to its promising potential outcome: fast magnetization manipulation in magnetoresistive random access memories with enhanced storage density and very low power consumption. Using a macrospin approach, we carried out a thorough analysis of the role of the VCMA on the magnetization dynamics of nanostructures with out-of-plane magnetic anisotropy. Diagrams of the magnetization switching have been computed depending on the material and experiment parameters (surface anisotropy, Gilbert damping, duration/amplitude of electric and magnetic field pulses) thus allowing predictive sets of parameters for optimum switching experiments. Two characteristic times of the trajectory of the magnetization were analyzed analytically and numerically setting a lower limit for the duration of the pulses. An interesting switching regime has been identified where the precessional reversal of magnetization does not depend on the voltage pulse duration. This represents a promising path for the magnetization control by VCMA with enhanced versatility.

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