Recent advances in Performance and effect of Zr doping with ZnO thin film sensor in Ammonia Vapour Sensing

Global NEST Journal ◽

10.30955/gnj.004020 ◽

2021 ◽

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Wide Band ◽

Fast Response ◽

Sem Analysis ◽

Zno Thin Film ◽

Film Sensor ◽

Doped Zno ◽

Silar Technique

<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>

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Properties of indium doped nanocrystalline ZnO thin films and their enhanced gas sensing performance

RSC Advances ◽

10.1039/c5ra10919a ◽

2015 ◽

Vol 5 (75) ◽

pp. 61230-61238 ◽

Cited By ~ 52

Author(s):

Sumati Pati ◽

P. Banerji ◽

S. B. Majumder

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Zno Thin Films ◽

Zno Thin Film ◽

Indium Concentration ◽

Doped Zno ◽

Undoped Counterpart ◽

Sensing Performance

Enhancement of gas sensing performance of indium doped ZnO thin film at optimal indium concentration as compared to its undoped counterpart.

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Effect of Temperature on the Electrical and Gas Sensing Properties of Polyaniline and Multiwall Carbon Nanotube Doped Polyaniline Composite Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.254.167 ◽

2011 ◽

Vol 254 ◽

pp. 167-170 ◽

Cited By ~ 1

Author(s):

Subodh Srivastava ◽

Sumit Kumar ◽

Vipin Kumar Jain ◽

Y.K. Vijay

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Hydrogen Gas ◽

Composite Thin Film ◽

Effect Of Temperature ◽

Multiwall Carbon Nanotube ◽

Film Sensor ◽

Composite Thin Films ◽

Pani Composite

In the present work we have reported the effect of temperature on the gas sensing properties of pure Polyaniline (PANI) and Multiwall carbon nanotube (MWNT) doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and MWNT doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline using ammonium persulfate in an acidic medium. The thin sensing film of chemically synthesized PANI and MWNT doped PANI composite were deposited onto finger type Cu-interdigited electrodes using spin cast technique to prepared chemiresistor type gas sensor. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature, MWNT doped PANI composite sensor shows higher response value and sensitivity with good repeatability in comparison to pure PANI thin film sensor. It was also observed that both PANI and MWNT doped PANI composite thin film based sensors showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

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Enhanced UV Photon-response of Tin Nano Cluster Loaded- laser Irradiated ZnO Thin film detector

MRS Proceedings ◽

10.1557/opl.2011.206 ◽

2011 ◽

Vol 1288 ◽

Author(s):

Rashmi Menon ◽

K. Sreenivas ◽

Vinay Gupta

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Surface States ◽

Response Speed ◽

Rf Magnetron Sputtering ◽

Fast Response ◽

Zno Thin Films ◽

Zno Thin Film ◽

Photo Response

ABSTRACTZinc Oxide (ZnO), II-VI compound semiconductor, is a promising material for ultraviolet (UV) photon sensor applications due to its attractive properties such as good photoconductivity, ease processing at low temperatures and excellent radiation hardness. The rf magnetron sputtering is a suitable deposition technique due to better control over stoichiometry and deposition of uniform film. Studies have shown that the presence of surface defects in ZnO and subsequently their passivation are crucial for enhanced photo-response characteristics, and to obtain the fast response speed. Worldwide efforts are continuing to develop good quality ZnO thin films with novel design structures for realization of an efficient UV photon sensor. In the present work, UV photon sensor is fabricated using a ZnO thin films deposited by rf magnetron sputtering on the corning glass substrate. Photo-response, (Ion/Ioff) of as-grown ZnO film of thickness 100 nm is found to be 3×103 with response time of 90 ms for UV intensity of 140 μW/cm2 (λ = 365 nm). With irradiation on ZnO thin film by pulsed Nd:YAG laser (forth harmonics 266 nm), the sensitivity of the UV sensor is found to enhance. The photo-response increases after laser irradiation to 4x104 with a fast response speed of 35 ms and attributed to the change in surface states and the native defects in the ZnO thin film. Further, enhancement in the ultraviolet (UV) photo-response (8×104) of detector was observed after integrating the nano-scale islands of Sn metal on the surface of laser irradiated ZnO thin film.

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Preparation and gas-sensing properties of Ce-doped ZnO thin-film sensors by dip-coating

Materials Science and Engineering B ◽

10.1016/j.mseb.2006.10.006 ◽

2007 ◽

Vol 137 (1-3) ◽

pp. 53-58 ◽

Cited By ~ 193

Author(s):

Chunqiao Ge ◽

Changsheng Xie ◽

Shuizhou Cai

Keyword(s):

Thin Film ◽

Gas Sensing ◽

Dip Coating ◽

Zno Thin Film ◽

Sensing Properties ◽

Thin Film Sensors ◽

Gas Sensing Properties ◽

Doped Zno

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Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

Journal of the chemical society of pakistan ◽

10.52568/000581 ◽

2021 ◽

Vol 43 (3) ◽

pp. 253-253

Author(s):

Mehmet zkan Mehmet zkan ◽

Sercen Sadik Erdem Sercen Sadik Erdem

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Band Gap ◽

Glass Substrate ◽

Zno Thin Films ◽

Vacuum Arc ◽

Zno Thin Film ◽

Doped Zno ◽

Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

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Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

Materials Testing ◽

10.1515/mt-2020-0123 ◽

2021 ◽

Vol 63 (8) ◽

pp. 778-782

Author(s):

Tülay Yıldız ◽

Nida Katı ◽

Kadriye Yalçın

Keyword(s):

Thin Film ◽

Thin Films ◽

Surface Roughness ◽

Optical Properties ◽

Spin Coating ◽

Sol Gel ◽

Zno Thin Film ◽

Spin Coating Method ◽

Coating Method ◽

Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

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