scholarly journals Impact of Aluminium on ZnO Thin Films for Antimicrobial Activity

Author(s):  
BA ANANDH ◽  
R SAKTHIVEL ◽  
A SHANKAR GANESH ◽  
S SUBRAMANI ◽  
A T RAJAMANICKAM

Abstract Thin films of pure Zinc Oxide (ZnO) and Aluminium (Al) doped ZnO were deposited by two step SILAR technique. Pure and Al (1%, 3%, 5%) doped ZnO thin film’s structural, morphology and optical properties were analyzed. Diffraction peaks of the all the samples were indexed to hexagonal wurtizite structure. The crystallite size, lattice parameters, dislocation density and microstrain were calculated for the prepared thin films. Morphology study using FESEM shows spherical shaped structure of pure ZnO and hexagonal faced rod like structure for Al doped ZnO thin films.T he UV-Vis absorption spectrum for the thin films was also studied. There is decrease in bandgap as the Al doping ratio increases from 1–5%. Photoluminescence (PL) studies confirm that oxygen ion vacancy and interstitial Zn+ ion were present. The maximum zone of inhibition was studied against the bacteria’s the Gram-negative (E.coli) and Gram-positive (S.aureus) by Agar diffusion method. Significant antibacterial result was seen in pure and Al doped ZnO. Al doped ZnO shows more antibacterial activity over pure ZnO. All the samples give considerable antifungal activity which was done against Aspergillusniger. .

2021 ◽  
Vol 33 (10) ◽  
pp. 2393-2399
Author(s):  
BA. Anandh ◽  
R. Sakthivel ◽  
A. Shankar Ganesh ◽  
S. Subramani ◽  
A.T. Rajamanickam

Thin films of pure zinc oxide (ZnO) and aluminium (Al) doped ZnO were deposited by two step SILAR technique. Pure and Al (1%, 3%, 5%) doped ZnO thin film’s structural, morphology and optical properties were analyzed. Diffraction peaks of all the samples were indexed to hexagonal Wurtizite structure. The crystallite size, lattice parameters, dislocation density and microstrain were calculated for the prepared thin films. Morphology study using FESEM shows spherical shaped structure of pure ZnO and hexagonal faced rod like structure for Al doped ZnO thin films. The UV-vis absorption spectrum for the thin films was also studied. There is decrease in bandgap as the Al doping ratio increases from 1% to 5%. Photoluminescence studies confirmed that oxygen ion vacancy and interstitial Zn+ ion were present. The maximum zone of inhibition was studied against the Gram-negative (E. coli) and Gram-positive (S. aureus) bacteria by agar diffusion method. Significant antimicrobial results were seen in pure and Al doped ZnO. Aluminium doped ZnO shows more antimicrobial activity over pure ZnO.


Author(s):  
S. Balamurali ◽  
S. Saravanakumar ◽  
R. Chandramohan ◽  
P. N. Magudeswaran

2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


2021 ◽  

<p>Pure and Zr doped ZnO thin films were prepared using SILAR technique. The influence of Zr doping on structural, morphological, optical and gas sensing properties of ZnO has been reported. X-ray diffraction study confirmed the formation of wurtzite structure of ZnO thin film (JCPDS 36-1451) fabricated by SILAR technique and the caluculated crystallites size of pure and doped ZnO were 39 and 36 nm respectively . SEM analysis of thin films has shown a completely different surface morphology. EDAX spetrum cnfirmed the presence of different compositional element in the fabriated thin films. Zr (3 wt%) doped ZnO thin film exhibited the best properties with a good transmittance and it has wide band gap of 3.26 eV. Photoluminescence emissions indicated increase in concentration of oxygen vacancies with introduction of dopant. NH3 vapour sensors were fabricated out of fabricated samples and it was observed that doped samples have significantly high sensing response, good selectivity, fast response and recovery time to ammonia vapoutr at room temperature.</p>


2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO

Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.


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