Analytically and empirically consistent characterization of resistive switching mechanism in Ag conducting-bridge random-access memory through pseudo-liquid approach

2021 ◽  
Author(s):  
Yeon-Joon Choi ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Kyungho Hong ◽  
Sungjoon Kim ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Physical Analysis ◽  
Filament Formation ◽  
Access Memory ◽  
Metal Bonding ◽  
Conducting Bridge ◽  
Resistive Switching Mechanism

A new physical analysis of the filament formation in Ag conducting-bridge random-access memory (CBRAM) in consideration of the existence of inter-atomic attractions caused by metal bonding is suggested. The movement...

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

2014 ◽  
Vol 105 (22) ◽  
pp. 223514 ◽  
Author(s):  
Tian-Jian Chu ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ion Accumulation ◽  
Access Memory ◽  
Nitrogen Doped ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Resistive Switching Mechanism

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices

2015 ◽  
Vol 23 (6) ◽  
pp. 1719-1725 ◽  
Author(s):  
Jiaying Jian ◽  
Honglong Chang ◽  
Arnaud Vena ◽  
Brice Sorli
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY

2016 ◽  
Vol 24 (04) ◽  
pp. 1750048 ◽  
Author(s):  
HONGXIA LI ◽  
YIMING Chen ◽  
XIN WU ◽  
JUNHUA XI ◽  
YANWEI HUANG ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Flash Memory ◽  
Thermal Evaporation ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Zno Films ◽  
Access Memory ◽  
Vacuum Thermal Evaporation ◽  
Resistive Switching Mechanism

Recently, resistive random access memory has been continuously investigated in order to replace the flash memory. In this paper, Al/ZnO/Al structured device was fabricated by magnetron sputtering and vacuum thermal evaporation. Systematic study has been conducted to explore the structural, morphological, and the resistive switching properties of ZnO films with Al metal as both bottom and top electrodes. The resistive switching mechanism of Al/ZnO/Al device was analyzed based on the above study.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory
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