scholarly journals Applicability of gas-jet MPCVD polycrystalline diamond films on silicon with NV centers in quantum magnetometry

2021 ◽  
Vol 2119 (1) ◽  
pp. 012120
Author(s):  
S M Tarkov ◽  
V A Antonov ◽  
S N Podlesny ◽  
A A Yemelyanov ◽  
A K Rebrov ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Gas Jet ◽  
Optical And Electrical Properties ◽  
Si Substrate ◽  
Optically Detected ◽  
Formation Efficiency ◽  
Ppm Level ◽  
Polycrystalline Diamond Film

Abstract Polycrystalline diamond film optical and electrical properties are investigated after the growth on <001> and <111> Si substrate by gas-jet MPCVD deposition in the presence of nitrogen in the gas mixture. Negatively charged NV− center formation was observed at the ~1.0 ppm level with the substitutional nitrogen concentration of 70 ppm. A comparison with the IIa type monocrystalline diamond plates with implanted and annealed nitrogen atoms at the 90 ppm concentration shows three times higher NV center formation efficiency by gas-jet MPCVD deposition than by ion implantation. CW optically detected magnetic resonance (ODMR) demonstrates the NV contented polycrystalline film application in a quantum magnetometry.

Polycrystalline Diamond Film Resistors

1992 ◽  
Vol 242 ◽  
Author(s):  
L. M. Edwards ◽  
J. L. Davidson
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
P Type ◽  
Polycrystalline Diamond Film ◽  
Effective Source

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

scholarly journals Etching of polycrystalline diamond films by electron beam assisted plasma

1996 ◽  
Vol 11 (11) ◽  
pp. 2744-2748 ◽  
Author(s):  
Koji Kobashi ◽  
Shigeaki Miyauchi ◽  
Koichi Miyata ◽  
Kozo Nishimura ◽  
Jorge J. Rocca
Keyword(s):  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Diamond Films ◽  
Film Surface ◽  
Polycrystalline Diamond ◽  
Etch Pits ◽  
X Ray ◽  
Direct Current Plasma ◽  
Polycrystalline Diamond Film ◽  
Scanning Electron

Polycrystalline diamond films were processed in a direct current plasma produced by a self-focused electron beam using combinations of H2, O2, and He as the processing gas. The film surfaces were observed by scanning electron microscopy, and characterized by x-ray photoelectron spectroscopy. It was found that for the case in which O2 was included in the processing gas, a high density of etch pits appeared on (100) faces of diamond grains, and oxygen was either physisorbed or chemisorbed at the film surface. It was demonstrated that the etching apparatus used was capable of forming at least a 5-μm wide pattern of polycrystalline diamond film.

Study of Mechanical and Elastic Properties of Diamond Films by Surface Acoustic Wave Spectroscopy (SAWS)

1995 ◽  
Vol 383 ◽  
Author(s):  
R. Kuschnereit ◽  
P. Hess
Keyword(s):  
Surface Wave ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Elastic Properties ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Layered System ◽  
Uv Laser ◽  
Wave Pulse ◽  
Polycrystalline Diamond Film

ABSTRACTThe density and elastic properties of a 1.9 μm thick polycrystalline diamond film deposited on a silicon substrate were measured by surface acoustic wave (SAW) spectroscopy. A density of 3.45±0.05 g/cm3, Young's modulus of 940 ± 20 GPa and Poisson's ratio below 0.12 were determined from the dispersion of a broadband coherent surface acoustic wave pulse propagating in the layered system. The surface wave pulses were generated using a ns UV laser pulse and detected with a piezoelectric foil transducer.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Polycrystalline Diamond Films and Single Crystal Diamonds Grown by Combustion Synthesis

CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  
Keyword(s):  
Single Crystal ◽  
Combustion Synthesis ◽  
Diamond Films ◽  
Polycrystalline Diamond

Low energy ion-induced damage of polycrystalline diamond films

1994 ◽  
Vol 3 (4-6) ◽  
pp. 663-671 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
B. Mainz ◽  
J. Stiegler ◽  
T. Schuhrke
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Low Energy

Investigation on the Machining of Thick Diamond Films by EDM Together with Mechanical Polishing

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Two Stage ◽  
Efficient Manner ◽  
Raman Scattering Spectroscopy ◽  
Electro Discharge Machining ◽  
Diamond Polishing ◽  
Cost Efficient

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Trap-assisted photon-enhanced thermionic emission from polycrystalline diamond films

2015 ◽  
Vol 212 (11) ◽  
pp. 2583-2588 ◽  
Author(s):  
S. Elfimchev ◽  
M. Chandran ◽  
R. Akhvlediani ◽  
A. Hoffman
Keyword(s):  
Diamond Films ◽  
Thermionic Emission ◽  
Polycrystalline Diamond
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