scholarly journals Моделирование детектора видимого и ближнего инфракрасного электромагнитного излучения на искусственном алмазе

2019 ◽  
Vol 89 (2) ◽  
pp. 258
Author(s):  
В.А. Кукушкин
Keyword(s):  
Diamond Film ◽  
Electric Potential ◽  
Path Length ◽  
Polycrystalline Diamond ◽  
Free Path Length ◽  
Vertical Flow ◽  
Voltage Distribution ◽  
Near Ir ◽  
Artificial Diamond ◽  
Polycrystalline Diamond Film

AbstractA method for calculation of the I – V characteristic is proposed for a detector of visible and near-IR electromagnetic radiation based on artificial diamond with allowance for vertical flow of electric current. The method can be used when the free-path length of carriers in diamond is less than the scale of variations in the concentration of carriers. The method is used to determine the following detector characteristics: the dependence of current on voltage, distribution of carrier concentration, and electric potential for a particular variant of a photodetector based on polycrystalline diamond film consisting of nanosized single crystals doped with boron.

Fracture observation of polycrystalline diamond film under indentation test

2004 ◽  
Vol 13 (11-12) ◽  
pp. 2024-2030 ◽  
Author(s):  
R. Ikeda ◽  
M. Hayashi ◽  
A. Yonezu ◽  
T. Ogawa ◽  
M. Takemoto
Keyword(s):  
Diamond Film ◽  
Indentation Test ◽  
Polycrystalline Diamond ◽  
Polycrystalline Diamond Film

High Resolution Tem Study of Diamond Formation on Silicon and Molybdenum Field Emitter Surfaces

1994 ◽  
Vol 354 ◽  
Author(s):  
A. F. Myers ◽  
J. Liu ◽  
W. B. Choi ◽  
G. J. Wojak ◽  
J. J. Hren
Keyword(s):  
High Resolution ◽  
Diamond Film ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical Vapor Deposition ◽  
Field Emitters ◽  
High Resolution Tem ◽  
Diffraction Patterns ◽  
Polycrystalline Diamond Film

AbstractDiamond is an attractive material for coating microfabricated metal and semiconductor field emitters, since it enhances the stability and emission characteristics of the emitter. In the present study, polycrystalline diamond thin films were grown on silicon and molybdenum field emitters by microwave plasma chemical vapor deposition, using the bias-enhanced nucleation technique. High resolution transmission electron microscopy (TEM) was used to analyze the morphology of the diamond film and the structure of the diamond/emitter interface. Electron diffraction patterns and high resolution images indicate the presence of a polycrystalline diamond film, as well as a polycrystalline SiC layer between the diamond film and the Si emitter. A carbide interlayer was also found to exist between the diamond and the Mo emitter surface. Parallel electron energy loss spectroscopy confirms the TEM identification of a polycrystalline diamond film.

The Characteristics of Diamond Film Deposited by Magnet-Enhanced Plasma Jet CVD

1996 ◽  
Author(s):  
K. Zhou ◽  
M. Dair ◽  
D. Wang ◽  
P. Han ◽  
B. Feng
Keyword(s):  
Magnetic Field ◽  
Diamond Film ◽  
Polycrystalline Diamond ◽  
Plasma Jet ◽  
Magnetic Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Polycrystalline Diamond Film ◽  
Scanning Electron

Abstract A diameter of 30 mm polycrystalline diamond film has been deposited by magnet-enhanced DC plasma jet CVD. The diamond film was characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and surface profilograph. Results reveal that under the same depositing parameters, magnetic field can increase purity of diamond film, improve thickness uniformity of diamond film, but no influence on crystal perfection and size of microcrystal of diamond film. A discussion on magnetic effect is presented.

Sensitive Elements of High Temperature Pressure Sensors Formed from a Doped Polycrystalline Diamond

2021 ◽  
Vol 1031 ◽  
pp. 178-183
Author(s):  
Elena Vysotina ◽  
Razhudin Rizakhanov ◽  
Sergey Sigalaev ◽  
Nikolay Polushin ◽  
Vadim Shokorov ◽  
...  
Keyword(s):  
High Temperature ◽  
Diamond Film ◽  
Pressure Sensors ◽  
Polycrystalline Diamond ◽  
Resistance Strain ◽  
Promising Material ◽  
Strain Gauges ◽  
Extreme Conditions ◽  
Boron Doped ◽  
Polycrystalline Diamond Film

The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.

Development Of Diamond Based Power Microelectronics

1997 ◽  
Vol 483 ◽  
Author(s):  
J. L. Davidson ◽  
W. P. Kang ◽  
Y. Gurbuz ◽  
D. V. Kerns ◽  
L. Davis ◽  
...  
Keyword(s):  
Diamond Film ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
High Energy ◽  
High Energy Density ◽  
Field Emitters ◽  
Device Structures ◽  
Electron Emitters ◽  
Polycrystalline Diamond Film

AbstractDiamond based power device structures such as resistor, capacitor, Schottky diode, p-n diode, thyristor, and field emitters are being investigated. Diamond resistors similar to standard thick film components in form and dimension were fabricated of polycrystalline diamond film. Using PECVD (plasma-enhanced chemical vapor deposition) processing to achieve diamond dielectric layers, high power, high energy density capacitors have been built. Despite grain boundaries and defects of polycrystalline diamond film, electronic devices such as field-effecttransistors and Schottky diodes have been developed. We have fabricated micro-patterned microtip arrays with this versatile new diamond technology as electron emitters. This paper will review diamond technology and results of this work.

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