Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Applied Physics Express ◽

10.35848/1882-0786/abe41f ◽

2021 ◽

Vol 14 (3) ◽

pp. 035002

Author(s):

Motoya Shinozaki ◽

Yui Muto ◽

Takahito Kitada ◽

Takashi Nakajima ◽

Matthieu R. Delbecq ◽

...

Keyword(s):

Quantum Dots ◽

Gallium Arsenide ◽

Radio Frequency ◽

Gate Voltage ◽

Voltage Dependence ◽

Noise Distribution ◽

Gate Voltage Dependence

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Gate voltage dependence of channel length modulation for 14 nm FinFETs

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521673 ◽

2016 ◽

Author(s):

Yuki Nariai ◽

Akira Hiroki

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Channel Length ◽

Gate Voltage Dependence

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Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2016.2524626 ◽

2016 ◽

Vol 16 (2) ◽

pp. 255-262

Author(s):

Ting Liu ◽

Levent E. Aygun ◽

Sigurd Wagner ◽

James C. Sturm

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Gate Voltage ◽

Thin Film Transistors ◽

Voltage Dependence ◽

Silicon Thin Film ◽

Field Stress ◽

Gate Voltage Dependence

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The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_37 ◽

1988 ◽

pp. 341-347

Author(s):

M. J. Kirton ◽

M. J. Uren ◽

S. Collins

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Interface States ◽

Gate Voltage Dependence

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Gate Voltage-Dependence of Junction Capacitance in MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3101999 ◽

2021 ◽

pp. 1-4

Author(s):

Jinwook Kuk ◽

Seonghearn Lee

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Junction Capacitance ◽

Gate Voltage Dependence

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Variability of low frequency noise in moderately-sized MOSFETs — A model for the area- and gate voltage-dependence

2015 International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2015.7288578 ◽

2015 ◽

Author(s):

Nikolaos Mavredakis ◽

Predrag Habas ◽

Alexandre Acovic ◽

Rene Meyer ◽

Matthias Bucher

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Gate Voltage Dependence

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ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of It2 between VDMOS and LDMOS transistors

IEEJ Transactions on Electrical and Electronic Engineering ◽

10.1002/tee.20669 ◽

2011 ◽

Vol 6 (4) ◽

pp. 361-366 ◽

Author(s):

Kenichi Hatasako ◽

Fumitoshi Yamamoto ◽

Akio Uenishi ◽

Takashi Kuroi ◽

Shigeto Maegawa ◽

...

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Gate Voltage Dependence

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Gate voltage dependence of 1/f noise in carbon nanotubes with the different metal contacts

2013 22nd International Conference on Noise and Fluctuations (ICNF) ◽

10.1109/icnf.2013.6578970 ◽

2013 ◽

Author(s):

Toshio Kawahara ◽

Satarou Yamaguchi ◽

Yasuhide Ohno ◽

Kenzo Maehashi ◽

Kazuhiko Matsumoto ◽

...

Keyword(s):

Carbon Nanotubes ◽

Gate Voltage ◽

Voltage Dependence ◽

Metal Contacts ◽

Gate Voltage Dependence

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Gate-voltage dependence of inter dot coupling and Aharanov–Bohm oscillation in laterally coupled vertical double dot

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2003.12.063 ◽

2004 ◽

Vol 22 (1-3) ◽

pp. 534-537 ◽

Author(s):

Tsuyoshi Hatano ◽

Michael Stopa ◽

Wataru Izumida ◽

Tomohiro Yamaguchi ◽

Takeshi Ota ◽

...

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Gate Voltage Dependence

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Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Electronics Letters ◽

10.1049/el:20000680 ◽

2000 ◽

Vol 36 (10) ◽

pp. 912 ◽

Author(s):

A. Balandin

Keyword(s):

Gate Voltage ◽

Field Effect ◽

Voltage Dependence ◽

Field Effect Transistors ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Heterostructure Field Effect Transistors ◽

Gate Voltage Dependence

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Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)00315-6 ◽

2002 ◽

Vol 13 (2-4) ◽

pp. 1111-1114 ◽

Author(s):

K Tsubaki ◽

N Maeda ◽

T Saitoh ◽

T Nishida ◽

N Kobayashi

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

Subband Structure ◽

Gate Voltage Dependence

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