Electrical characteristics of TaSi/sub x/N/sub y/ gate electrodes for dual gate Si-CMOS devices

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

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Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.938 ◽

2013 ◽

Vol 740-742 ◽

pp. 938-941

Author(s):

Florian Chevalier ◽

P. Brosselard ◽

D. Tournier ◽

G. Grosset ◽

L. Dupuy ◽

...

Keyword(s):

Design Methodology ◽

Vertical Channel ◽

Optimal Structure ◽

Electrical Characteristics ◽

Gate Electrode ◽

Thermal Oxide ◽

Dual Gate

This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and characterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical characteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.

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Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN

MRS Proceedings ◽

10.1557/proc-831-e3.41 ◽

2004 ◽

Vol 831 ◽

Author(s):

E. Kaminska ◽

A. Piotrowska ◽

K. Golaszewska ◽

R. Lukasiewicz ◽

A. Szczesny ◽

...

Keyword(s):

Thermal Stability ◽

High Temperature ◽

High Power ◽

Schottky Contacts ◽

Electrical Characteristics ◽

Thermal Reliability ◽

Uv Detectors ◽

Gate Electrodes ◽

Gan Hemt ◽

Gan Heterostructure

ABSTRACTWe have developed the deposition and studied the electrical characteristics and thermal reliability of Ru-based contacts on n- type GaN as well as on AlGaN/GaN heterostructure. Amorphous, conducting and transparent RuSiO4 contacts with their extremely low reverse currents and thermal stability up to 900°C, show great potential for use as Schottky contacts to n-type GaN and gate electrodes for AlGaN/GaN HEMT in high temperature, high power applications as well as in UV detectors.

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Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

MRS Proceedings ◽

10.1557/proc-471-137 ◽

1997 ◽

Vol 471 ◽

Author(s):

Byung-Hyuk Min ◽

Jerzy Kanicki

Keyword(s):

Leakage Current ◽

Experimental Results ◽

Electrical Characteristics ◽

Current Ratio ◽

Low Leakage ◽

Kink Effect ◽

Low Leakage Current ◽

Dual Gate ◽

Output Characteristics

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

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SC1 Cleaning Effect on Electrical Characteristics of 256 Mbit Mobile DRAM with Dual Gate Oxide

Journal of The Electrochemical Society ◽

10.1149/1.1786931 ◽

2004 ◽

Vol 151 (10) ◽

pp. G683 ◽

Cited By ~ 3

Author(s):

Chihoon Lee ◽

Namhyuk Jo ◽

Chanseong Hwang ◽

Hyeong Joon Kim ◽

Wonshik Lee

Keyword(s):

Gate Oxide ◽

Electrical Characteristics ◽

Dual Gate

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Fabrication and electrical characteristics of dual-gate ZnO nanorod metal–oxide semiconductor field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/17/11/s16 ◽

2006 ◽

Vol 17 (11) ◽

pp. S327-S331 ◽

Cited By ~ 51

Author(s):

Hyeong-Jin Kim ◽

Chul-Ho Lee ◽

Dong-Wook Kim ◽

Gyu-Chul Yi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zno Nanorod ◽

Electrical Characteristics ◽

Dual Gate

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Analysis of electrical characteristics and electroluminescent efficiency of field induced contact-DGOLET

Main Group Chemistry ◽

10.3233/mgc-210144 ◽

2022 ◽

pp. 1-11

Author(s):

Sandeep Kumar Ojha ◽

Brijesh Kumar

Keyword(s):

Threshold Voltage ◽

Dynamic Control ◽

Drain Current ◽

Vital Role ◽

Electrical Characteristics ◽

Flexible Display ◽

Light Emitting ◽

Device Architecture ◽

Dual Gate ◽

Current Densities

This research paper discusses the significance development in field-induced contact dual-gate organic light emitting transistor (FIC-DGOLET) device architecture and characteristics. The device behaviour is analyzed and observed significant value of electroluminescent efficiency. The deep investigation of FIC-DGOLET device is discussed in this paper, where impact of varying the various parameters such as thickness of organic semiconductor (OSC) materials from the range of 400 nm to 200 nm at altered value of threshold voltage by using 2D ATLAS simulator. Its theoretical calculation influence over the dynamic control of the device characteristics such as saturated drain current (I ds ), mobility (μ), threshold voltage (V th ) as well as sub threshold swing. The FIC-DGOLET is a dual-gate transistor which also emits light by the operations of two accumulated regions, that are electrons and holes which is not completely overlapped to each other. The leakage current in DG-OLET can be reduced to the extent that 70% than single gate OLET (SG-OLET). The recombination zone mechanism of FIC-DGOLET plays a vital role in its performance, where we get comparable value of electroluminescent efficiency with reported, low value of exciton quenching and current densities. The extracted parameters of DG-OLETs are like drive current of 100A, I on/off 108, threshold voltage V th of 1.3 V at V gs of –3 V and V ds of 0 to –3 V. These extracted performance parameters are very helpful in designing of flexible display applications.

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