Characteristics of ITO Films Deposited by DC Magnetron Sputtering Using Various Sintered Indium-Tin-Oxide Targets

2011 ◽  
pp. 419-426
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Influence of the Tin Concentration in Indium Tin Oxide (ITO) Films Deposited by DC Magnetron Sputtering for Touch Panels

2014 ◽  
Vol 9 (3) ◽  
pp. 414-418
Author(s):  
Sang Hyun Cho ◽  
Hyo Jin Kim ◽  
Sung Ho Lee ◽  
Jae IK Woo ◽  
Kyu Ho Song ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dc Magnetron Sputtering ◽  
Touch Panels ◽  
Ito Films

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Indium–tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

2015 ◽  
Vol 24 (11) ◽  
pp. 117703 ◽  
Author(s):  
Jin-Hua Gu ◽  
Jia-Le Si ◽  
Jiu-Xiu Wang ◽  
Ya-Yang Feng ◽  
Xiao-Yong Gao ◽  
...  
Keyword(s):  
Solar Cell ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Heterojunction Solar Cell ◽  
Dc Magnetron Sputtering ◽  
Tin Oxide Films

Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

1999 ◽  
Vol 341 (1-2) ◽  
pp. 225-229 ◽  
Author(s):  
S.H Shin ◽  
J.H Shin ◽  
K.J Park ◽  
T Ishida ◽  
O Tabata ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Dc Magnetron Sputtering ◽  
Low Resistivity ◽  
Tin Oxide Films
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