Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Influence of Al2O3 Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering

2011 ◽  
Vol 675-677 ◽  
pp. 1209-1212
Author(s):  
Wu Tang ◽  
Yi Peng Chao ◽  
Yong Si Fang ◽  
Xiao Long Weng ◽  
Long Jiang Deng
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amorphous Structure ◽  
Buffer Layers ◽  
Visible Range ◽  
Ito Film ◽  
Pet Substrate ◽  
Ito Films

Indium Tin Oxide (ITO) films on PET substrate sandwiching Al2O3 buffer layers with different thickness have been prepared by magnetron sputtering at low deposition temperature. The crystal structures, electrical and optical properties of ITO films have been investigated by XRD, four-point probe technology and UV-Vis spectrophotometer as a function of different Al2O3 buffer layers thickness, respectively. XRD reveals that there is an amorphous structure in ITO films with no buffer layer. However, ITO films became crystalline after sandwiching the buffer layer. It can be found that there are two major peaks, (222) and (400) of ITO film. A smallest resistivity of 3.53×10-4 Ω.cm was obtained for ITO film with Al2O3 buffer layers thickness 75nm. The average transmittance of ITO/Al2O3/PET films in the visible range of 400-760nm wavelength was around 80%. It can be conclude that the (222) orientation of ITO film is more in favor of low resistivity.

scholarly journals Fabrication and Characterization of Indium Tin Oxide Films

2017 ◽  
Vol 15 (2) ◽  
pp. 170-175 ◽  
Author(s):  
Shiuh-Chuan Her ◽  
Chun-Fu Chang
Keyword(s):  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Wavelength Region ◽  
Hall Effect Measurement ◽  
Optical Transmittance ◽  
Preparation Temperature ◽  
Different Temperatures ◽  
Ito Films

Background Transparent conducting oxide (TCO) films are of particular interest in the field of optoelectronics, due to the requirement for transparent electrodes in applications such as organic light-emitting diodes, solar cells and so on. The aim of this study was to obtain a better understanding of the effects of preparation temperature on indium tin oxide (ITO) films, to improve their performance for optoelectronic applications. Methods ITO films were deposited on glass substrate at different temperatures, using direct current (DC) magnetron sputtering. The influence of substrate temperature on the microstructure and electrical and optical properties was studied. The surface topography and microstructure of the films were analyzed by atomic force microscopy. The electrical resistivity and optical transmittance of the films were measured using the Hall effect measurement and spectrometer, respectively. Results The results showed that both the surface roughness and film thickness increased as the substrate temperature increased. Transmittance increased from 78% to 80% in the visible wavelength region, while resistivity decreased from 6.05 × 10−4 to 3.27 × 10−4 Ω-cm as the substrate temperature increased from 25°C to 275°C. Conclusions High-quality ITO films with low resistivity and high transmittance can be achieved by increasing the deposition temperature.

INFLUENCE OF CONTINUOUS AND DISCONTINUOUS DEPOSITIONS ON PROPERTIES OF ITO FILMS PREPARED BY DC MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (26) ◽  
pp. 3157-3170 ◽  
Author(s):  
K. AIEMPANAKIT ◽  
P. RAKKWAMSUK ◽  
S. DUMRONGRATTANA
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Energy Gap ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Saturation Curve ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω· cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

Preparation and characterization of tantalum-doped indium tin oxide films deposited by magnetron sputtering

2008 ◽  
Vol 58 (3) ◽  
pp. 203-206 ◽  
Author(s):  
Bo Zhang ◽  
Xianping Dong ◽  
Xiaofeng Xu ◽  
Jiansheng Wu
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Tin Oxide Films
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