Effect of Film Thickness on Electrical and Optical Properties of ZnO/Ag Dual Layer Film

Author(s):  
Hiromi Yabe ◽  
Eri Akita ◽  
Pangpang Wang ◽  
Daisuke Yonekura ◽  
Ri-ichi Murakami ◽  
...  
2016 ◽  
Vol 599 ◽  
pp. 19-26 ◽  
Author(s):  
S. Kuprenaite ◽  
A. Abrutis ◽  
V. Kubilius ◽  
T. Murauskas ◽  
Z. Saltyte ◽  
...  

1986 ◽  
Vol 77 ◽  
Author(s):  
Takashi Nishioka ◽  
Yoshio Itoh ◽  
Masafumi Yamaguchi

ABSTRACTElectrical and optical properties of single-domain GaAs heteroepitaxial films grown on Si(100) by using metalorganic chemical vapor deposition have been investigated. Cathodolumi-nescence and electron-beam induced current experiments have revealed that signal nonuniformities on the film surface agree in number with GaAs microdefect densities observed through chemical etching, rather than conventional aligned etch-pit densities. The cathodoluminescence experiments also indicate that GaAs properties are improved with increases in film thickness. This nonuniformity and the film-thickness dependence are related to GaAs solar cell characteristics fabricated on the Si substrate. A GaAs/Si interface study proves that p-type Si substrates cause type conversions near the interface due to GaAs growth. Evidence of positive interface charges in the GaAs/Si system is determined by using Hall effect measurements, secondary-ion mass spectroscopy and electron-beam induced current experiments.


2001 ◽  
Vol 696 ◽  
Author(s):  
M.C. Park ◽  
W.H. Yoon ◽  
D.H. Lee ◽  
J.M. Myoung ◽  
S.H. Bae ◽  
...  

AbstractA series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis were utilized to investigate the effects of misfit strain on the surface morphology and the crystallinity. The electrical and optical properties of the films were also investigated as a function of the film thickness. It was found that the crystalline quality, electrical and optical properties of the films depended on the film thickness and were improved with increasing the film thickness. This is attributed to the fact that the films thinner than 400 nm are under the severe misfit strain, which decreases as the film thickness increases further.


2013 ◽  
Vol 821-822 ◽  
pp. 845-848
Author(s):  
Jian Chen ◽  
Yi Hua Sun ◽  
Xiao Hua Sun ◽  
Cai Hua Huang

Transparent conducting aluminum-doped zinc oxide (AZO) films with different film thickness had been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall-effect measurement and optical transmission spectroscopy, which were strongly influenced by film thickness. With the film thickness increasing from 140 nm to 710 nm, the resistivity decreases from 9.78 × 103 to 3.23 × 103 Ω.cm and an average optical transmission decreases from 88% to 80% in the visible range and the optical bandgap decreases from 3.47 to 3.24 eV.


2014 ◽  
Vol 27 (1) ◽  
pp. 23-26 ◽  
Author(s):  
Seung-Hong Kim ◽  
Sun-Kyung Kim ◽  
So-Young Kim ◽  
Jae-Hyun Jeon ◽  
Tae-Kyung Gong ◽  
...  

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