scholarly journals Gate-Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field-Effect Transistors

2010 ◽  
Vol 21 (1) ◽  
pp. 100-107 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Juliaan R. Meijboom ◽  
Edsger C. P. Smits ◽  
Simon G. J. Mathijssen ◽  
Paul W. M. Blom ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Gate Bias ◽  
No2 Detection

Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability

2008 ◽  
Vol 600-603 ◽  
pp. 807-810 ◽  
Author(s):  
Aivars J. Lelis ◽  
Daniel B. Habersat ◽  
Ronald Green ◽  
Neil Goldsman
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Temperature Response ◽  
Charge Trapping ◽  
Gate Bias ◽  
Voltage Instability ◽  
Increasing Temperature ◽  
Mobile Ions ◽  
Interfacial Charge

We have observed variations in the instability in the threshold voltage, VT, of SiC metaloxide semiconductor field-effect transistors (MOSFETs) from various sources and/or processes due to gate-bias stressing as a function of temperature. In some cases we see a dramatic increase in the instability with increasing temperature, consistent with interfacial charge trapping or de-trapping. In other cases the temperature response is very slight, and in still other cases we actually see VT instabilities that move in the opposite direction with bias, indicating the presence of mobile ions.

NO2 Detection and Real-Time Sensing with Field-Effect Transistors

2013 ◽  
Vol 26 (1) ◽  
pp. 773-785 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Claudia Piliego ◽  
Ilias Katsouras ◽  
Paul W. M. Blom ◽  
Dago M. de Leeuw
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
No2 Detection

Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Yohai Roichman ◽  
Nir Tessler
Keyword(s):  
Power Law ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Time Range ◽  
Gate Bias ◽  
Current Dependence ◽  
Turn On ◽  
Long Time ◽  
Source Current ◽  
Short Time

AbstractTurn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.

Visible-blind UV monitoring with a photochromic charge trapping layer in organic field-effect transistors

2019 ◽  
Vol 115 (11) ◽  
pp. 113302 ◽  
Author(s):  
Jing-Jing Lv ◽  
Xu Gao ◽  
Lin-Xi Zhang ◽  
Yang Feng ◽  
Jian-Long Xu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Organic Field Effect Transistors ◽  
Visible Blind

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

2018 ◽  
Vol 140 ◽  
pp. 109-114 ◽  
Author(s):  
Jungkyu Jang ◽  
Sungju Choi ◽  
Jungmok Kim ◽  
Tae Jung Park ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Ph Sensors ◽  
Si Nanowire ◽  
Rising Time

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Stress Dependent ◽  
Gate Bias Stress
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