Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

2011 ◽  
Vol 98 (18) ◽  
pp. 183506 ◽  
Author(s):  
M. Toledano-Luque ◽  
B. Kaczer ◽  
Ph. J. Roussel ◽  
J. Franco ◽  
L. Å. Ragnarsson ◽  
...  
Keyword(s):  
Temperature Stress ◽  
Field Effect ◽  
Positive Charge ◽  
Field Effect Transistors ◽  
Silicon Oxynitride ◽  
Gate Bias ◽  
Bias Temperature Stress ◽  
Depth Localization

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

Turn-on and Charge Build-up Dynamics in Polymer Field Effect Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Yohai Roichman ◽  
Nir Tessler
Keyword(s):  
Power Law ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Time Range ◽  
Gate Bias ◽  
Current Dependence ◽  
Turn On ◽  
Long Time ◽  
Source Current ◽  
Short Time

AbstractTurn-on dynamics of polymer field effect transistors were examined experimentally over a wide timescale. We found that the source current dependence on time following switch on of the gate bias exhibits a power law at the short time range, and an exponential decay at the intermediate to long time range. We demonstrate that the transistor dynamic behavior is governed by the channel charge build-up, and can be described accurately by a simple capacitor-resistor distributed line model.

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

2018 ◽  
Vol 140 ◽  
pp. 109-114 ◽  
Author(s):  
Jungkyu Jang ◽  
Sungju Choi ◽  
Jungmok Kim ◽  
Tae Jung Park ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Ph Sensors ◽  
Si Nanowire ◽  
Rising Time

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Stress Dependent ◽  
Gate Bias Stress

Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

2008 ◽  
Vol 92 (23) ◽  
pp. 233120 ◽  
Author(s):  
Jongsun Maeng ◽  
Gunho Jo ◽  
Soon-Shin Kwon ◽  
Sunghoon Song ◽  
Jaeduck Seo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sweep Rate ◽  
Gate Bias ◽  
Zno Nanowire
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