Dynamic Schottky Diode Direct‐Current Generator under Extremely Low Temperature

2021 ◽  
pp. 2105325
Author(s):  
Haonan Zheng ◽  
Runjiang Shen ◽  
Huikai Zhong ◽  
Yanghua Lu ◽  
Xutao Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Diode ◽  
Direct Current ◽  
Current Generator

scholarly journals Results of studies of the direct current generator of low-temperature nitrogen-propane plasma

2021 ◽  
Vol 2100 (1) ◽  
pp. 012028
Author(s):  
M Kh Gadzhiev ◽  
A S Tyuftaev ◽  
M V Ilyichev ◽  
M A Sargsyan ◽  
D I Yusupov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Direct Current ◽  
The State ◽  
Current Generator ◽  
Arc Stability ◽  
Upper Limit ◽  
Gas Consumption ◽  
Propane Butane

Abstract The effect of propane-butane addition to the plasma-forming gas on the state of cathodes with inserts made from lanthanated tungsten and hafnium is investigated. With a small propane addition (1%), the restorative effect of the insert material is noted, and the propane consumption has an upper limit when it is introduced together with the plasma-forming gas (no more than ∼ 73% of the plasma-forming gas consumption), below which the arc stability is not disturbed.

scholarly journals A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode

2018 ◽  
pp. 1804398 ◽  
Author(s):  
Shisheng Lin ◽  
Yanghua Lu ◽  
Sirui Feng ◽  
Zhenzhen Hao ◽  
Yanfei Yan
Keyword(s):  
Schottky Diode ◽  
Direct Current ◽  
Current Density ◽  
High Current Density ◽  
Van Der Waals ◽  
High Current ◽  
Current Generator

scholarly journals Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

iScience ◽  
2019 ◽  
Vol 22 ◽  
pp. 58-69 ◽  
Author(s):  
Yanghua Lu ◽  
Zhenzhen Hao ◽  
Sirui Feng ◽  
Runjiang Shen ◽  
Yanfei Yan ◽  
...  
Keyword(s):  
Direct Current ◽  
Current Generator ◽  
Voltage Output ◽  
Pn Junctions

Pt/p-strained-Si Schottky diode characteristics at low temperature

1997 ◽  
Vol 71 (7) ◽  
pp. 942-944 ◽  
Author(s):  
S. Chattopadhyay ◽  
L. K. Bera ◽  
S. K. Ray ◽  
C. K. Maiti
Keyword(s):  
Low Temperature ◽  
Schottky Diode ◽  
Strained Si

Low-Temperature Processed Hybrid Organic/Silicon Solar Cells with Power Conversion Efficiency up to 6.5%

2015 ◽  
Vol 1771 ◽  
pp. 201-206 ◽  
Author(s):  
M. Weingarten ◽  
T. Zweipfennig ◽  
A. Vescan ◽  
H. Kalisch
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Schottky Diode ◽  
Current Density ◽  
Short Circuit ◽  
Power Conversion ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Organic Silicon ◽  
Hybrid Devices

ABSTRACTHybrid organic/silicon heterostructures have become of great interest for photovoltaic application due to their promising features (e.g. easy fabrication in a low-temperature process) for cost-effective photovoltaics. This work is focused on solar cells with a hybrid heterojunction between the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) and n-doped monocrystalline silicon. As semi-transparent top contact, a thin (15 nm) Au layer was employed. Devices with different P3HT thicknesses were processed by spin-casting and compared with a reference Au/n-Si Schottky diode solar cell.The current density-voltage (J-V) measurements of the hybrid devices show a significant increase in open-circuit voltage (VOC) from 0.29 V up to 0.50 V for the best performing hybrid devices compared to the Schottky diode reference, while the short-circuit current density (JSC) does not change significantly. The increased VOC indicates that P3HT effectively reduces the reverse electron current into the gold contact. The wavelength-dependent JSC measurements show a decreased JSC in the wavelength range of P3HT absorption. This is related to the reduced JSC generation in silicon not being compensated by JSC generation in P3HT. It is concluded that the charge generation in P3HT is less efficient than in silicon.After a thermal annealing of the hybrid P3HT/silicon solar cells, we achieved power conversion efficiencies (PCE) (AM1.5 illumination) up to 6.5% with VOC of 0.52 V, JSC of 18.6 mA/cm² and a fill factor (FF) of 67%. This is more than twice the efficiency of the reference Schottky diode.

Temperature Variation Effects on Current-Voltage (i-v) Characteristics of n-GaN Schottky Diode

2006 ◽  
Vol 517 ◽  
pp. 141-146
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Temperature Variation ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Pt Electrode ◽  
Turn On ◽  
Bandgap Narrowing ◽  
Current Voltage ◽  
Higher Temperature

We focus in this paper the temperature variation effects on the current – voltage ( I-V) characteristics of n-GaN schottky diode. The diode was doped with carrier concentration 1*1013cm-3 and Pt electrode was used. The simulated current were obtained at temperatures from 50K to 500K and voltage up to 2Volt. We use the Srh (Schokley read hall), Cvt (Lombardi Model), Auger (Auger), Fermi (Fermi Dirac), Impact, Bgn (Bandgap Narrowing), Complete ioniz model to get the schottky rectifying current – voltage (I-V) characteristics.. We find that by increasing the temperature from 50K to 500K, the forward schottky rectifying current decreases from 2.7187 Amp to 0.383 Amp. while the forward turn – on voltage decreases. In reverse bias at low temperature the current is high and we increase the temperature the current decreases. The breakdown voltage decreases at higher temperature.

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