SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.
The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.
In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.
Tin-selenide as a futuristic material: properties and applications