Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

2018 ◽  
Vol 436 ◽  
pp. 477-485 ◽  
Author(s):  
Naveen Kumar ◽  
Ashish Dubey ◽  
Behzad Bahrami ◽  
S. Venkatesan ◽  
Qiquan Qiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Carrier Mobility ◽  
Zno Thin Film ◽  
Next Generation ◽  
Flexible Devices ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Doped Zno

High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing

2018 ◽  
Vol 44 (10) ◽  
pp. 11751-11756 ◽  
Author(s):  
Li Jiang ◽  
Kang Huang ◽  
Jinhua Li ◽  
Shanshan Li ◽  
Yun Gao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Low Voltage ◽  
Solution Processing ◽  
Zno Thin Film ◽  
High Carrier Mobility ◽  
High Carrier

An all-organic "soft" thin film transistor with very high carrier mobility

1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Soft Thin Film ◽  
Very High

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
High Carrier Mobility ◽  
High Carrier

High-performance monolayer Na3Sb shrinking transistors: a DFT-NEGF study

Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18931-18937
Author(s):  
Wenhan Zhou ◽  
Shengli Zhang ◽  
Shiying Guo ◽  
Hengze Qu ◽  
Bo Cai ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Next Generation ◽  
High Carrier Mobility ◽  
High Carrier

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.

Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Crystalline Layer ◽  
Electron Field ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Made In

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

A high carrier-mobility crystalline silicon film directly grown on polyimide using SiCl4/H2 microwave plasma for flexible thin film transistors

2015 ◽  
Vol 3 (28) ◽  
pp. 7513-7522 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Si Films

Flexible Si-TFTs with a high carrier mobility of 106 cm2 V−1 s−1 are fabricated using SiCl4/H2 microwave plasma for the preparation of crystalline Si films.

High carrier mobility in polycrystalline thin film diamond

1998 ◽  
Vol 72 (3) ◽  
pp. 353-355 ◽  
Author(s):  
Hui Jin Looi ◽  
Richard B. Jackman ◽  
John S. Foord
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Polycrystalline Thin Film ◽  
High Carrier Mobility ◽  
High Carrier

SiGe Thermoelectric Film for Gas Sensor Micro-Devices

2004 ◽  
Vol 828 ◽  
Author(s):  
Woosuck Shin ◽  
Kazuki Tajima ◽  
Yeongsoo Choi ◽  
Noriya Izu ◽  
Ichiro Matsubara ◽  
...  
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Absolute Value ◽  
Catalyst Film ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Thermoelectric Thin Film

ABSTRACTA gas sensor micro-device using both thermoelectric film and catalyst film has been developed on the platform of micro-hotplate. Thermoelectric thin film of B-doped SiGe was deposited on the Si3N4/SiO2/Si substrate by helicon sputtering method and thermal annealing was carried out to crystallize the as-deposited amorphous-like film. With increasing the annealing temperature and time, the crystallization of the SiGe thin film progressed, resulting in high carrier mobility and large absolute value of Seebeck coefficient. The hydrogen sensitivity of the micro-thermoelectric gas sensors was investigated.

Conductive layer protected and oxide catalyst-coated thin-film silicon solar cell as an efficient photoanode

2017 ◽  
Vol 7 (23) ◽  
pp. 5608-5613 ◽  
Author(s):  
Ning Wang ◽  
Min Liu ◽  
Junhui Liang ◽  
Tiantian Li ◽  
Hairen Tan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Carrier Mobility ◽  
Silicon Solar Cell ◽  
Oxide Catalyst ◽  
Conductive Layer ◽  
Visible Light Absorption ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Pec Water Splitting

Photovoltaic–photoelectrochemical (PV-PEC) water splitting based on silicon (Si) is very promising because of its broad visible light absorption, earth abundance and high carrier mobility.

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