scholarly journals Atomic Layer Deposition: 2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques (Adv. Mater. Interfaces 3/2019)

2019 ◽  
Vol 6 (3) ◽  
pp. 1970024
Author(s):  
Gyu-Hyeon Park ◽  
Kornelius Nielsch ◽  
Andy Thomas
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Atomic Layer ◽  
Transition Metal Dichalcogenide ◽  
Layer Deposition ◽  
Gas Phase Deposition ◽  
Deposition Techniques

Atomic Layer Deposition of Solid Lubricant Thin Films

2005 ◽  
Author(s):  
T. W. Scharf ◽  
S. V. Prasad ◽  
M. T. Dugger ◽  
T. M. Mayer
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Aspect Ratios ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Tungsten disulphide (WS2) and molybdenum disulfide (MoS2), which belong to the family of transition metal dichalcogenides, are well known for their solid lubricating behavior. Thin films of MoS2 and WS2 exhibit extremely low coefficient of friction (COF ∼0.02 to 0.05) in dry environments, and are typically applied by sputter deposition, pulsed laser ablation, evaporation or chemical vapor deposition, which are essentially either line-of-sight or high temperature processes. With these techniques it is difficult to coat surfaces shadowed from the target, or uniformly coat sidewalls of three-dimensional or high aspect ratio structures. For applications such as micromechanical (MEMS) devices, where dimensions and separation tolerances are small, and aspect ratios are large, these traditional deposition techniques are inadequate. Atomic layer deposition (ALD) is a chemical vapor deposition technique that could overcome many of these problems by using sequential introduction of gaseous precursors and selective surface chemistry to achieve controlled growth at lower temperatures, but the chemistry needed to grow transition metal dichalcogenide films by ALD is not known.

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 189-208 ◽  
Author(s):  
Timothee Blanquart ◽  
Jaakko Niinistö ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Layer Deposition

scholarly journals Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen
Keyword(s):  
Thin Films ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Surface Reaction ◽  
Atomic Layer ◽  
Atomic Level ◽  
High Quality ◽  
Layer Deposition ◽  
Controlled Deposition

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.

Liquid atomic layer deposition as emergent technology for the fabrication of thin films

2021 ◽  
Author(s):  
Octavio Graniel ◽  
Josep Puigmartí-Luis ◽  
David Muñoz-Rojas
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Gas Phase ◽  
Atomic Layer ◽  
Layer Deposition

Liquid atomic layer deposition (LALD) has emerged as a complementary technology of atomic layer deposition (ALD) to help overcome some of the challenges currently faced from working in the gas-phase.

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