Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films

2000 ◽  
Vol 147 (9) ◽  
pp. 3377 ◽  
Author(s):  
Marika Juppo ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Metal Nitride ◽  
Transition Metal Nitride ◽  
Layer Deposition

Atomic Layer Deposition of Solid Lubricant Thin Films

2005 ◽  
Author(s):  
T. W. Scharf ◽  
S. V. Prasad ◽  
M. T. Dugger ◽  
T. M. Mayer
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Aspect Ratios ◽  
Layer Deposition ◽  
Vapor Deposition Technique

Tungsten disulphide (WS2) and molybdenum disulfide (MoS2), which belong to the family of transition metal dichalcogenides, are well known for their solid lubricating behavior. Thin films of MoS2 and WS2 exhibit extremely low coefficient of friction (COF ∼0.02 to 0.05) in dry environments, and are typically applied by sputter deposition, pulsed laser ablation, evaporation or chemical vapor deposition, which are essentially either line-of-sight or high temperature processes. With these techniques it is difficult to coat surfaces shadowed from the target, or uniformly coat sidewalls of three-dimensional or high aspect ratio structures. For applications such as micromechanical (MEMS) devices, where dimensions and separation tolerances are small, and aspect ratios are large, these traditional deposition techniques are inadequate. Atomic layer deposition (ALD) is a chemical vapor deposition technique that could overcome many of these problems by using sequential introduction of gaseous precursors and selective surface chemistry to achieve controlled growth at lower temperatures, but the chemistry needed to grow transition metal dichalcogenide films by ALD is not known.

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 189-208 ◽  
Author(s):  
Timothee Blanquart ◽  
Jaakko Niinistö ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Layer Deposition

Recent Progress in Atomic Layer Deposition of Multifunctional Oxides and Two-Dimensional Transition Metal Dichalcogenides

2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Metal Dichalcogenides ◽  
Multifunctional Oxides

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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