High Temperature Coupling of IR Inactive CC Mode in Complementary Metal Oxide Semiconductor Metamaterial Structure

2017 ◽  
Vol 5 (3) ◽  
pp. 1600778 ◽  
Author(s):  
Dihan Hasan ◽  
Prakash Pitchappa ◽  
Chong Pei Ho ◽  
Chengkuo Lee
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metamaterial Structure

scholarly journals Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

Sensors ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 17265-17280 ◽  
Author(s):  
El Boufouss ◽  
Laurent Francis ◽  
Valeriya Kilchytska ◽  
Pierre Gérard ◽  
Pascal Simon ◽  
...  
Keyword(s):  
High Temperature ◽  
Metal Oxide ◽  
Low Power ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Voltage Reference ◽  
Ultra Low Power ◽  
Radiation Hard

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

A complementary metal-oxide semiconductor digitally programmable current conveyor

2011 ◽  
pp. n/a-n/a ◽  
Author(s):  
Hussain Alzaher ◽  
Noman Tasadduq ◽  
Osama Al-Ees ◽  
Fares Al-Ammari
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Current Conveyor ◽  
Oxide Semiconductor ◽  
Digitally Programmable

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1050-1053 ◽  
Author(s):  
Masayasu Miyake ◽  
Toshio Kobayashi ◽  
Yutaka Sakakibara ◽  
Kimiyoshi Deguchi ◽  
Mitsutoshi Takahashi
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Deep Submicron ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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