scholarly journals Room‐Temperature Low‐Voltage Control of Excitonic Emission in Transition Metal Dichalcogenide Monolayers

2021 ◽  
pp. 2101305
Author(s):  
Sergii Morozov ◽  
Christian Wolff ◽  
N. Asger Mortensen
2020 ◽  
Vol 6 (5) ◽  
pp. 1901427
Author(s):  
Jiajia Feng ◽  
Resta A. Susilo ◽  
Bencheng Lin ◽  
Wen Deng ◽  
Yanju Wang ◽  
...  

2017 ◽  
Vol 14 (3) ◽  
pp. 303-308 ◽  
Author(s):  
L. Antonio Benítez ◽  
Juan F. Sierra ◽  
Williams Savero Torres ◽  
Aloïs Arrighi ◽  
Frédéric Bonell ◽  
...  

ACS Photonics ◽  
2018 ◽  
Vol 5 (12) ◽  
pp. 5047-5054 ◽  
Author(s):  
Etienne Lorchat ◽  
Stefano Azzini ◽  
Thibault Chervy ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
...  

2007 ◽  
Vol 22 (5) ◽  
pp. 1390-1395 ◽  
Author(s):  
Wooseok Ki ◽  
Xiaoying Huang ◽  
Jing Li ◽  
David L. Young ◽  
Yong Zhang

A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical absorption, thermal, and transport properties of the thin films were characterized. Surface morphology of the films was analyzed by atomic force microscopy and scanning electron microscopy. Highly conductive and textured n-type MoS2 films were obtained. The measured room temperature conductivity ∼50 Ω−1 cm−1 is substantially higher than the previously reported values. The n-type WS2 films were prepared for the first time using solution-processed deposition. WS2 displays a conductivity of ∼6.7 Ω−1 cm−1 at room temperature.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sabyasachi Tiwari ◽  
Maarten L. Van de Put ◽  
Bart Sorée ◽  
William G. Vandenberghe

AbstractUsing first-principles calculations, we investigate the magnetic order in two-dimensional (2D) transition-metal-dichalcogenide (TMD) monolayers: MoS2, MoSe2, MoTe2, WSe2, and WS2 substitutionally doped with period four transition-metals (Ti, V, Cr, Mn, Fe, Co, Ni). We uncover five distinct magnetically ordered states among the 35 distinct TMD-dopant pairs: the non-magnetic (NM), the ferromagnetic with out-of-plane spin polarization (Z FM), the out-of-plane polarized clustered FMs (clustered Z FM), the in-plane polarized FMs (X–Y FM), and the anti-ferromagnetic (AFM) state. Ni and Ti dopants result in an NM state for all considered TMDs, while Cr dopants result in an anti-ferromagnetically ordered state for all the TMDs. Most remarkably, we find that Fe, Mn, Co, and V result in an FM ordered state for all the TMDs, except for MoTe2. Finally, we show that V-doped MoSe2 and WSe2, and Mn-doped MoS2, are the most suitable candidates for realizing a room-temperature FM at a 16–18% atomic substitution.


Sign in / Sign up

Export Citation Format

Share Document