scholarly journals Resistive Switching Memory: Reliable Ge 2 Sb 2 Te 5 ‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018)

2018 ◽  
Vol 4 (11) ◽  
pp. 1870052
Author(s):  
Niloufar Raeis‐Hosseini ◽  
Seokjae Lim ◽  
Hyunsang Hwang ◽  
Junsuk Rho
Keyword(s):  
Resistive Switching ◽  
Nitrogen Doping ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Switching Memory

scholarly journals Dynamic conductance characteristics in HfOx-based resistive random access memory

RSC Advances ◽  
2017 ◽  
Vol 7 (21) ◽  
pp. 12984-12989 ◽  
Author(s):  
Ying-Chen Chen ◽  
Yao-Feng Chang ◽  
Xiaohan Wu ◽  
Fei Zhou ◽  
Meiqi Guo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Dynamic Conductance ◽  
Switching Memory

Schematic of RESET analysis by dynamic conductance of I–V curve in HfOx-based resistive switching memory.

Radial Growth Model for Conical Nanobridge in Resistive Switching Memory Devices

2013 ◽  
Vol 1562 ◽  
Author(s):  
Tong Liu ◽  
Yuhong Kang ◽  
Sarah El-Helw ◽  
Tanmay Potnis ◽  
Marius Orlowski
Keyword(s):  
Growth Rate ◽  
Radial Growth ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Conductive Bridge ◽  
Geometrical Form ◽  
Switching Memory

ABSTRACTA phenomenological model has been proposed for the radial growth of the copper or silver nanobridge in the conductive bridge random access memory devices. In this model, the growth rate of the bridge is proportional to the local ion flux based on the hopping mechanism. Due to the differences of the local electric field, the growth rate is different along a conical shape nanobridge. The model accounts for the growth rate difference by introducing a geometrical form factor. Based on the model, the top and bottom radii are predicted for truncated conical copper nanobridge. The model is validated with data obtained on Cu/TaOx/Pt resistive devices.

Flexible one diode–one resistor resistive switching memory arrays on plastic substrates

RSC Advances ◽  
2014 ◽  
Vol 4 (38) ◽  
pp. 20017-20023 ◽  
Author(s):  
Hyeon Gyun Yoo ◽  
Seungjun Kim ◽  
Keon Jae Lee
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Plastic Substrates ◽  
Resistive Switching Memory ◽  
Change Material ◽  
Switching Memory

Flexible one diode–one resistor resistive random access memory (RRAM) with 8 × 8 arrays composed of high-performance silicon diodes and a resistive change material for fully functional flexible memory operation.

A ferroelectric memristor based on the migration of oxygen vacancies

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 54113-54118 ◽  
Author(s):  
Pengfei Hou ◽  
Jinbin Wang ◽  
Xiangli Zhong ◽  
Yuexian Wu
Keyword(s):  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Non Destructive ◽  
Switching Memory

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.

Complementary resistive switching behavior for conductive bridge random access memory

2016 ◽  
Vol 9 (6) ◽  
pp. 064201 ◽  
Author(s):  
Hao-Xuan Zheng ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Cheng Shih ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Conductive Bridge
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