scholarly journals Thermoelectric Materials: Enhancement of Thermoelectric Figure of Merit by the Insertion of MgTe Nanostructures in p -type PbTe Doped with Na2 Te (Adv. Energy Mater. 9/2012)

2012 ◽  
Vol 2 (9) ◽  
pp. 1038-1038 ◽  
Author(s):  
Michihiro Ohta ◽  
Kanishka Biswas ◽  
Shih-Han Lo ◽  
Jiaqing He ◽  
Duck Young Chung ◽  
...  
2015 ◽  
Vol 3 (20) ◽  
pp. 10777-10786 ◽  
Author(s):  
A. Bhardwaj ◽  
N. S. Chauhan ◽  
D. K. Misra

Several nanostructuring methods have been demonstrated to produce a variety of nanostructured materials, and these methods are well recognized as effective paradigms for improving the performance of thermoelectric materials.


1997 ◽  
Vol 478 ◽  
Author(s):  
Jon L. Schindler ◽  
Tim P. Hogan ◽  
Paul W. Brazis ◽  
Carl R. Kannewurf ◽  
Duck-Young Chung ◽  
...  

AbstractNew Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi4Te6 have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of ≈ +110 μV/K at room temperature. A second compound, β-K2Bi8Se13 shows lower conductivity ≈ 240 S/cm, but a larger n-type thermopower ≈ −200 μV/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi2Te3. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi4Te6 reaches ZT ≈ 0.32 at 260 K and for β-K2Bi8Se13 ZT ≈ 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.


2015 ◽  
Vol 3 (40) ◽  
pp. 10494-10499 ◽  
Author(s):  
Min Ho Lee ◽  
Ka-Ryeong Kim ◽  
Jong-Soo Rhyee ◽  
Su-Dong Park ◽  
G. Jeffrey Snyder

Sb2Te3/Ag2Te (ST/AT) composites with ST/AT molar ratios of 1/1, 2/1, 4/1, 8/1, 16/1, and 32/1 were synthesized, and high ZT values were achieved compared with other Pb-free p-type chalcogenide thermoelectric materials.


2016 ◽  
Vol 4 (24) ◽  
pp. 5766-5778 ◽  
Author(s):  
N. S. Chauhan ◽  
A. Bhardwaj ◽  
T. D. Senguttuvan ◽  
R. P. Pant ◽  
R. C. Mallik ◽  
...  

In situ synthesis of composites employing ASSET in combination with panoscopic approach has been demonstrated in p-type ZrCoSb-based half-Heusler thermoelectric materials for significant enhancement in thermoelectric figure of merit.


2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.


2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..


Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.


1998 ◽  
Vol 545 ◽  
Author(s):  
Ctirad Uher ◽  
Jihui Yang ◽  
Siqing Hu

AbstractA useful approach to identify materials with high thermoelectric figure of merit is to search for solids that offer great flexibility to modify and tailor the structure so as to achieve the optimal transport behavior. Among the most promising novel thermoelectric materials are solids with “open crystal structure”. They may be typified by structures with unfilled cages, crystals with an empty atomic sublattice, and by a network of polyhedral cages enclosing guest species. In this paper we present our latest results concerning transport properties in the above classes of solids. Specifically, we focus on the filled skutterudites, half-Heusler alloys, and clathrates.


2013 ◽  
Vol 69 (5) ◽  
pp. 397-400 ◽  
Author(s):  
Ding-Bang Xiong ◽  
Norihiko L. Okamoto ◽  
Haruyuki Inui

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