Efficient n‐Doping of Polymeric Semiconductors through Controlling the Dynamics of Solution‐State Polymer Aggregates

2021 ◽  
Author(s):  
Miao Xiong ◽  
Xinwen Yan ◽  
Jia-Tong Li ◽  
Song Zhang ◽  
Zhiqiang Cao ◽  
...  
Keyword(s):  
Solution State ◽  
Polymer Aggregates ◽  
N Doping

scholarly journals Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 507
Author(s):  
Luca Seravalli ◽  
Claudio Ferrari ◽  
Matteo Bosi
Keyword(s):  
Charge Transfer ◽  
Electrical Properties ◽  
Surface Charges ◽  
Molecular Sensing ◽  
Germanium Nanowires ◽  
Physical Mechanisms ◽  
Additional Doping ◽  
Different Types ◽  
N Doping ◽  
Very High

In this paper, we model the electrical properties of germanium nanowires with a particular focus on physical mechanisms of electrical molecular sensing. We use the Tibercad software to solve the drift-diffusion equations in 3D and we validate the model against experimental data, considering a p-doped nanowire with surface traps. We simulate three different types of interactions: (1) Passivation of surface traps; (2) Additional surface charges; (3) Charge transfer from molecules to nanowires. By analyzing simulated I–V characteristics, we observe that: (i) the largest change in current occurs with negative charges on the surfaces; (ii) charge transfer provides relevant current changes only for very high values of additional doping; (iii) for certain values of additional n-doping ambipolar currents could be obtained. The results of these simulations highlight the complexity of the molecular sensing mechanism in nanowires, that depends not only on the NW parameters but also on the properties of the molecules. We expect that these findings will be valuable to extend the knowledge of molecular sensing by germanium nanowires, a fundamental step to develop novel sensors based on these nanostructures.

Rational Surface Engineering of MXene@N-doping Hollow Carbon Dual-confined Cobalt Sulfides/Selenides for Advanced Aluminum Batteries

2021 ◽  
Author(s):  
Long Yao ◽  
Shunlong Ju ◽  
Xuebin Yu
Keyword(s):  
Surface Engineering ◽  
Rational Surface ◽  
Natural Abundance ◽  
Multivalent Ions ◽  
N Doping ◽  
Hollow Carbon

Rechargeable aluminum batteries (RABs) based on multivalent ions transfer have attracted great attention due to their large specific capacities, natural abundance, and high safety of metallic Al anode. However, the...

scholarly journals Metallic surface doping of metal halide perovskites

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuze Lin ◽  
Yuchuan Shao ◽  
Jun Dai ◽  
Tao Li ◽  
Ye Liu ◽  
...  
Keyword(s):  
Metal Ions ◽  
Metallic Surface ◽  
Grand Challenge ◽  
New Device ◽  
Surface Doping ◽  
N Doping ◽  
Halide Perovskites ◽  
Heavily Doped ◽  
Low Solubility ◽  
Striking Contrast

AbstractIntentional doping is the core of semiconductor technologies to tune electrical and optical properties of semiconductors for electronic devices, however, it has shown to be a grand challenge for halide perovskites. Here, we show that some metal ions, such as silver, strontium, cerium ions, which exist in the precursors of halide perovskites as impurities, can n-dope the surface of perovskites from being intrinsic to metallic. The low solubility of these ions in halide perovskite crystals excludes the metal impurities to perovskite surfaces, leaving the interior of perovskite crystals intrinsic. Computation shows these metal ions introduce many electronic states close to the conduction band minimum of perovskites and induce n-doping, which is in striking contrast to passivating ions such as potassium and rubidium ion. The discovery of metallic surface doping of perovskites enables new device and material designs that combine the intrinsic interior and heavily doped surface of perovskites.

scholarly journals Picosecond time-resolved photon antibunching measures nanoscale exciton motion and the true number of chromophores

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Gordon J. Hedley ◽  
Tim Schröder ◽  
Florian Steiner ◽  
Theresa Eder ◽  
Felix J. Hofmann ◽  
...  
Keyword(s):  
Rational Design ◽  
Three Dimensional ◽  
Dna Origami ◽  
Fluorescent Nanoparticles ◽  
Time Resolved ◽  
Exciton Diffusion ◽  
Polymer Aggregates ◽  
True Number ◽  
Particle Level ◽  
Photon Antibunching

AbstractThe particle-like nature of light becomes evident in the photon statistics of fluorescence from single quantum systems as photon antibunching. In multichromophoric systems, exciton diffusion and subsequent annihilation occurs. These processes also yield photon antibunching but cannot be interpreted reliably. Here we develop picosecond time-resolved antibunching to identify and decode such processes. We use this method to measure the true number of chromophores on well-defined multichromophoric DNA-origami structures, and precisely determine the distance-dependent rates of annihilation between excitons. Further, this allows us to measure exciton diffusion in mesoscopic H- and J-type conjugated-polymer aggregates. We distinguish between one-dimensional intra-chain and three-dimensional inter-chain exciton diffusion at different times after excitation and determine the disorder-dependent diffusion lengths. Our method provides a powerful lens through which excitons can be studied at the single-particle level, enabling the rational design of improved excitonic probes such as ultra-bright fluorescent nanoparticles and materials for optoelectronic devices.

Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping

2012 ◽  
Vol 717-720 ◽  
pp. 415-418
Author(s):  
Yoshitaka Umeno ◽  
Kuniaki Yagi ◽  
Hiroyuki Nagasawa
Keyword(s):  
Mechanical Properties ◽  
Ab Initio ◽  
Density Functional ◽  
Stacking Faults ◽  
Single Layer ◽  
Local Strain ◽  
Density Functional Theory Calculations ◽  
Stacking Fault ◽  
Functional Theory ◽  
N Doping

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.

Encapsulating Cobalt into N-Doping Hollow Frameworks for Efficient Cascade Catalysis

2021 ◽  
Author(s):  
Ruirui Yun ◽  
Beibei Zhang ◽  
Chuang Qiu ◽  
Ziwei Ma ◽  
Feiyang Zhan ◽  
...  
Keyword(s):  
N Doping ◽  
Cascade Catalysis
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