Synthesis and device performance of an oxygen-interrupted bipolar polymer host with carbazole and triphenylphosphine oxide in the main chain

2016 ◽  
Vol 134 (7) ◽  
Author(s):  
Zhu-Xin Fan ◽  
Yu Bai ◽  
Zhi-Wei Chu ◽  
Xin-Wen Zhang ◽  
Qing-Hua Zhao
Keyword(s):  
Main Chain ◽  
Triphenylphosphine Oxide ◽  
Device Performance ◽  
Polymer Host

Solution processible triphenylphosphine-oxide-cored dendritic hosts featuring thermally activated delayed fluorescence for power-efficient blue electrophosphorescent devices

2019 ◽  
Vol 7 (32) ◽  
pp. 9850-9855 ◽  
Author(s):  
Mingming Zhang ◽  
Liang Chen ◽  
Xiushang Xu ◽  
Lei Zhao ◽  
Shumeng Wang ◽  
...  
Keyword(s):  
Phosphine Oxide ◽  
Triphenylphosphine Oxide ◽  
Delayed Fluorescence ◽  
Device Performance ◽  
Thermally Activated Delayed Fluorescence ◽  
Power Efficient ◽  
Thermally Activated ◽  
New Hosts

A series of phosphine oxide based dendritic hosts have been developed. Compare with conventional dendritic host H2, the new hosts not only maintain high T1 but also have a small ΔEST and bring higher device performance.

scholarly journals Synthesis and Characterization of Carbazole-Benzothiadiazole-Based Conjugated Polymers for Organic Photovoltaic Cells with Triazole in the Main Chain

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Eunhee Lim
Keyword(s):  
Conjugated Polymers ◽  
Main Chain ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Synthesis And Characterization ◽  
Device Performance ◽  
Film Morphology ◽  
Optimal Amount ◽  
Coupling Polymerization

We have synthesized a series of carbazole-benzothiadiazole-triazole based copolymers, poly[(N-9′-heptadecanyl-2,7-carbazole)-co-(5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole))-co-((4-(4-butylphenyl)-3,5-diphenyl-4H-1,2,4]triazole))] (PCz3TBTz) by Suzuki coupling polymerization. The optical and electrochemical properties of the copolymers could be tuned by changing the comonomer unit of triazole from 0% to 80%. Organic photovoltaic (OPV) cells were fabricated by blending the synthesized polymers as a donor and PCBM as an acceptor. The material solubility and film morphology were improved by introducing the triazole unit in the main chain. Improved OPV device performance of 1.74% was achieved in the presence of an optimal amount of triazole moieties.

Synthesis and Properties of Carbazole Main Chain Copolymers with Oxadiazole Pendant toward Bipolar Polymer Host: Tuning the HOMO/LUMO Level and Triplet Energy

2008 ◽  
Vol 20 (23) ◽  
pp. 7324-7331 ◽  
Author(s):  
Kai Zhang ◽  
Youtian Tao ◽  
Chuluo Yang ◽  
Han You ◽  
Yang Zou ◽  
...  
Keyword(s):  
Main Chain ◽  
Triplet Energy ◽  
Lumo Level ◽  
Homo Lumo ◽  
Polymer Host

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

Development of liquid crystal light valves using Bi12SiO20 as the photoconductor. Part 2: Device performance

1986 ◽  
Vol 133 (1) ◽  
pp. 65
Author(s):  
W.L. Baillie ◽  
P.M. Openshaw ◽  
A.D. Hart ◽  
S.S. Makh
Keyword(s):  
Liquid Crystal ◽  
Device Performance
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