ChemInform Abstract: THE CURRENT-VOLTAGE CHARACTERISTICS OF A PHOTOELECTROCHEMICAL CELL USING P-TYPE POROUS SILICON

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current–voltage characteristics

Physica B Condensed Matter ◽

10.1016/j.physb.2006.08.006 ◽

2007 ◽

Vol 390 (1-2) ◽

pp. 151-154 ◽

Cited By ~ 31

Author(s):

Fahrettin Yakuphanoglu ◽

Burm-Jong Lee

Keyword(s):

Interfacial Layer ◽

Electrical Characterization ◽

Current Voltage ◽

Current Voltage Characteristics ◽

P Type

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Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

Semiconductors ◽

10.1134/1.1187297 ◽

1997 ◽

Vol 31 (12) ◽

pp. 1221-1224 ◽

Cited By ~ 1

Author(s):

T. Ya. Gorbach ◽

S. V. Svechnikov ◽

P. S. Smertenko ◽

P. G. Tul’chinskii ◽

A. V. Bondarenko ◽

...

Keyword(s):

Porous Silicon ◽

Chemical Etching ◽

Current Voltage ◽

Current Voltage Characteristics

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Peculiarities of the current-voltage characteristics of oxidized porous silicon

Technical Physics Letters ◽

10.1134/1.1589557 ◽

2003 ◽

Vol 29 (6) ◽

pp. 459-460 ◽

Cited By ~ 1

Author(s):

M. S. Ablova ◽

M. V. Zamoryanskaya ◽

V. I. Sokolov ◽

R. I. Khasanov

Keyword(s):

Porous Silicon ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Oxidized Porous Silicon

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I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.576.519 ◽

2012 ◽

Vol 576 ◽

pp. 519-522 ◽

Cited By ~ 3

Author(s):

Fadzilah Suhaimi Husairi ◽

Maslihan Ain Zubaidah ◽

Shamsul Faez M. Yusop ◽

Rusop Mahmood Mohamad ◽

Saifolah Abdullah

Keyword(s):

Electrical Properties ◽

Porous Silicon ◽

Surface Topography ◽

Electrochemical Etching ◽

Silicon Layer ◽

Porous Silicon Layer ◽

Force Microscopy ◽

Atomic Force ◽

Current Voltage ◽

P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

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Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-281-727 ◽

1992 ◽

Vol 281 ◽

Author(s):

C. Piskoti ◽

B. Mykolajenko ◽

M. Vaziri

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Molecular Beam ◽

Metal Contact ◽

Epitaxial Layers ◽

Preliminary Results ◽

Current Voltage ◽

Current Voltage Characteristics ◽

P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

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The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1571 ◽

2006 ◽

Vol 527-529 ◽

pp. 1571-1574 ◽

Cited By ~ 1

Author(s):

Cole W. Litton ◽

Ya.I. Alivov ◽

D. Johnstone ◽

Ümit Özgür ◽

V. Avrutin ◽

...

Keyword(s):

Room Temperature ◽

Molecular Beam ◽

Reverse Bias ◽

Zno Films ◽

Turn On ◽

Forward Current ◽

Current Voltage ◽

Potential Applications ◽

Current Voltage Characteristics ◽

P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

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Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

MRS Proceedings ◽

10.1557/proc-358-683 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 4

Author(s):

L. Tsybeskov ◽

S. P. Duttagupta ◽

P. M. Fauchet

Keyword(s):

Activation Energy ◽

Porous Silicon ◽

Power Law ◽

Current Density ◽

Crystalline Silicon ◽

Exponential Law ◽

Current Voltage ◽

Device Applications ◽

Current Voltage Characteristics ◽

Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

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Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Optica Applicata ◽

10.37190/oa200215 ◽

2020 ◽

Vol 50 (2) ◽

Author(s):

Krzesimir Nowakowski-Szkudlarek ◽

Grzegorz Muziol ◽

Mikolaj Żak ◽

Mateusz Hajdel ◽

Marcin Siekacz ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Contact Layer ◽

Light Emitting ◽

Mg Doping ◽

Current Voltage ◽

Type Contact ◽

Current Voltage Characteristics ◽

P Type ◽

Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

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