Benzoselenadiazole‐Based Conjugated Molecules: Active Switching Layers with Nanofibrous Morphology for Nonvolatile Organic Resistive Memory Devices

ChemPlusChem ◽  
2020 ◽  
Vol 85 (5) ◽  
pp. 910-920 ◽  
Author(s):  
Rohit G. Jadhav ◽  
Amitesh Kumar ◽  
Sanjay Kumar ◽  
Sayan Maiti ◽  
Shaibal Mukherjee ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Flicker Noise ◽  
Transition Metal Oxide ◽  
Memory Devices ◽  
Resistive Memory ◽  
Layered Transition Metal

Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

2013 ◽  
Vol 23 (45) ◽  
pp. 5631-5637 ◽  
Author(s):  
David Brunel ◽  
Costin Anghel ◽  
Do-Yoon Kim ◽  
Saïd Tahir ◽  
Stéphane Lenfant ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Memory Devices ◽  
Resistive Memory

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

2010 ◽  
Vol 518 (12) ◽  
pp. 3293-3298 ◽  
Author(s):  
S. Puthen Thermadam ◽  
S.K. Bhagat ◽  
T.L. Alford ◽  
Y. Sakaguchi ◽  
M.N. Kozicki ◽  
...  
Keyword(s):  
Memory Devices ◽  
Resistive Memory

NiO-based resistive memory devices with highly improved uniformity boosted by ionic liquid pre-treatment

2019 ◽  
Vol 480 ◽  
pp. 57-62 ◽  
Author(s):  
Xin Kang ◽  
Jiajun Guo ◽  
Yingjie Gao ◽  
Shuxia Ren ◽  
Wei Chen ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Memory Devices ◽  
Resistive Memory ◽  
Pre Treatment

Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

2015 ◽  
Vol 1729 ◽  
pp. 53-58
Author(s):  
Brian L. Geist ◽  
Dmitri Strukov ◽  
Vladimir Kochergin
Keyword(s):  
Metal Oxide ◽  
Diffusion Processes ◽  
Memory Device ◽  
Device Fabrication ◽  
Oxide Material ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Metal Metal ◽  
Metal Oxide Layer

ABSTRACTResistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Optimization of quantum yield of highly luminescent graphene oxide quantum dots and their application in resistive memory devices

2019 ◽  
Vol 34 (12) ◽  
pp. 125016
Author(s):  
Rakesh Chandra Das ◽  
Koustav Kashyap Gogoi ◽  
Nipom Sekhar Das ◽  
Avijit Chowdhury
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Quantum Yield ◽  
Memory Devices ◽  
Resistive Memory ◽  
Graphene Oxide Quantum Dots
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