Optimization of quantum yield of highly luminescent graphene oxide quantum dots and their application in resistive memory devices

2019 ◽  
Vol 34 (12) ◽  
pp. 125016
Author(s):  
Rakesh Chandra Das ◽  
Koustav Kashyap Gogoi ◽  
Nipom Sekhar Das ◽  
Avijit Chowdhury
2017 ◽  
Vol 5 (42) ◽  
pp. 11046-11052 ◽  
Author(s):  
Xiaobing Yan ◽  
Lei Zhang ◽  
Yongqiang Yang ◽  
Zhenyu Zhou ◽  
Jianhui Zhao ◽  
...  

Resistive memory (RRAM) based on a solid–electrolyte insulator is a type of critical nanoscale device with promising potential in non-volatile memory, analog circuits and neuromorphic synapse applications.


Author(s):  
Sonia Sharma ◽  
Chieh-An Cheng ◽  
Svette Reina Merden Santiago ◽  
Denice N. Feria ◽  
Chi-Tsu Yuan ◽  
...  

Negative differential resistance (NDR) devices have attracted considerable interest due to their potential applications in switches, memory devices, and analog-to-digital converters.


2017 ◽  
Vol 184 (3) ◽  
pp. 871-878 ◽  
Author(s):  
Siobhan J. Bradley ◽  
Renee Kroon ◽  
Geoffry Laufersky ◽  
Magnus Röding ◽  
Renee V. Goreham ◽  
...  

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