Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

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Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

MRS Proceedings ◽

10.1557/opl.2011.857 ◽

2011 ◽

Vol 1337 ◽

Cited By ~ 14

Author(s):

B.D. Briggs ◽

S.M. Bishop ◽

K.D. Leedy ◽

B. Butcher ◽

R. L. Moore ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Hafnium Oxide ◽

Copper Concentration ◽

Atomic Layer ◽

Metal Electrode ◽

Pulse Mode ◽

Switching Behavior ◽

Material Structure ◽

Memory Devices ◽

Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

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MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

Modern Physics Letters B ◽

10.1142/s0217984913500747 ◽

2013 ◽

Vol 27 (11) ◽

pp. 1350074 ◽

Cited By ~ 4

Author(s):

YU-LING JIN ◽

ZHONG-TANG XU ◽

KUI-JUAN JIN ◽

CHEN GE ◽

HUI-BIN LU ◽

...

Keyword(s):

Oxygen Vacancy ◽

Oxygen Vacancies ◽

Vacancy Concentration ◽

Resistance Switching ◽

Switching Behavior ◽

Oxygen Vacancy Concentration ◽

Mechanism Study ◽

Switching Performance ◽

Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

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Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽

10.3390/ma13122755 ◽

2020 ◽

Vol 13 (12) ◽

pp. 2755

Author(s):

Tzu-Han Su ◽

Ke-Jing Lee ◽

Li-Wen Wang ◽

Yu-Chi Chang ◽

Yeong-Her Wang

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Sol Gel ◽

Switching Behavior ◽

Resistive Memory ◽

Scanning Electron Microscope Image ◽

Resistive Switching Behavior ◽

Bipolar Resistive Switching ◽

Electron Microscope Image ◽

Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices

Applied Physics Letters ◽

10.1063/1.5141132 ◽

2020 ◽

Vol 116 (1) ◽

pp. 013506 ◽

Cited By ~ 1

Author(s):

Xiaobing Yan ◽

Zuoao Xiao ◽

Chao Lu

Keyword(s):

Thin Film ◽

Memory Devices ◽

Resistive Memory

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Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

Physical Chemistry Chemical Physics ◽

10.1039/c5cp01235j ◽

2015 ◽

Vol 17 (19) ◽

pp. 12849-12856 ◽

Cited By ~ 42

Author(s):

Shuang Gao ◽

Fei Zeng ◽

Minjuan Wang ◽

Guangyue Wang ◽

Cheng Song ◽

...

Keyword(s):

Resistive Switching ◽

Binary Oxide ◽

Switching Behavior ◽

Memory Devices ◽

Resistive Memory ◽

Resistive Switching Behavior ◽

System P ◽

Active Metal

The nonpolar resistive switching behavior of the Pt/Ta2O5/Pt structure can be transformed into the bipolar and complementary ones by inserting 2 and 4 nm Ta nanolayers, respectively.

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Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

Nanoscale ◽

10.1039/c7nr04011c ◽

2017 ◽

Vol 9 (29) ◽

pp. 10502-10510 ◽

Cited By ~ 16

Author(s):

Susant Kumar Acharya ◽

Janghyun Jo ◽

Nallagatlla Venkata Raveendra ◽

Umasankar Dash ◽

Miyoung Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Oxygen Vacancy ◽

Resistance Switching ◽

Fast Ion Conductors ◽

Fast Ion ◽

Switching Memory ◽

Ion Conductors

An epitaxial brownmillerite thin-film platform with tuned oxygen vacancy channels is used to realize high ReRAM performance.

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Fabrication and Characterization of Copper Oxide Resistive Memory Devices

MRS Proceedings ◽

10.1557/opl.2011.982 ◽

2011 ◽

Vol 1337 ◽

Cited By ~ 1

Author(s):

S.M. Bishop ◽

B.D. Briggs ◽

Z.P. Rice ◽

S. Addepalli ◽

N.R. McDonald ◽

...

Keyword(s):

Copper Oxide ◽

Electrical Contact ◽

Switching Behavior ◽

Memory Devices ◽

Plasma Oxidation ◽

Resistive Memory ◽

Oxide Interface ◽

Bipolar Switching ◽

Current Voltage

ABSTRACTThree synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

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