High-frequencyC-V characteristics of a buried-channel MOS capacitor

2004 ◽  
Vol 87 (4) ◽  
pp. 25-33
Author(s):  
Masayasu Miyake
Keyword(s):  
Mos Capacitor ◽  
Buried Channel

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor

2021 ◽  
Author(s):  
Sema Türkay ◽  
Adem Tataroğlu
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Permittivity ◽  
Electric Modulus ◽  
Arrhenius Equation ◽  
Rf Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Complex Dielectric Permittivity ◽  
Mos Capacitor ◽  
Universal Power Law ◽  
Complex Electrical Conductivity

AbstractRF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.

Polymeric Thin Films for Electro-Optic Modulator and High Density Optical Memory Applications

1995 ◽  
Vol 392 ◽  
Author(s):  
Larry R. Dalton ◽  
Aaron W. Harper ◽  
Zhiyong Liang ◽  
Jingsong Zhu ◽  
Uzi Efron ◽  
...  
Keyword(s):  
Conformational Changes ◽  
Optical Waveguides ◽  
Optical Memory ◽  
High Density ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Polymeric Thin Films ◽  
Buried Channel ◽  
Electro Optic ◽  
Memory Applications

AbstractChromophores capable of undergoing conformational changes when exposed to ultraviolet or visible light have been synthesized with functional groups permitting attachment to polymer matrices. One class of such chromophores, containing reactive functionalities at both ends of the chromophore, are referred to as double-end crosslinkable (DEC) chromophores. These chromophores are used in the synthesis of hardened nonlinear optically active lattices and in the fabrication of buried channel nonlinear optical waveguides by photoprocessing; development of such waveguides represents a critical step in the production of polymeric electro-optic modulators. Such chromophores are also crucial to the phenomena of laser-assisted poling (also known as photochemically-induced poling). Finally, these chromophores are attached to the surface of polystyrene beads permitting the realization of room temperature spectral hole burning exploiting morphology-dependent resonances. Such resonances provide the basis of wavelength coding for the development of high density optical memories.

Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

2012 ◽  
Vol 33 (9) ◽  
pp. 1264-1266 ◽  
Author(s):  
Li-Jung Liu ◽  
Kuei-Shu Chang-Liao ◽  
Yi-Chuen Jian ◽  
Jen-Wei Cheng ◽  
Tien-Ko Wang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Buried Channel

Performance of Deep-Depletion Buried-Channel $n$-MOSFETs for CMOS Image Sensors

2013 ◽  
Vol 60 (12) ◽  
pp. 4173-4179 ◽  
Author(s):  
Konstantin D. Stefanov ◽  
Zhige Zhang ◽  
Chris Damerell ◽  
David Burt ◽  
Arjun Kar-Roy
Keyword(s):  
Image Sensors ◽  
Buried Channel ◽  
Cmos Image Sensors

Frequency Agile Annular Ring Microstrip Antenna Loaded with MOS Capacitor

2008 ◽  
Vol 22 (10) ◽  
pp. 1361-1370 ◽  
Author(s):  
B. K. Kanaujia ◽  
A. K. Singh ◽  
B. R. Vishvakarma
Keyword(s):  
Microstrip Antenna ◽  
Mos Capacitor ◽  
Annular Ring ◽  
Frequency Agile

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

scholarly journals Erratum: A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor

2017 ◽  
Vol 71 (5) ◽  
pp. 310-310
Author(s):  
Doohyung Cho ◽  
Kunsik Park ◽  
Seongwook Yoo ◽  
Sanggi Kim ◽  
Jinhwan Lee ◽  
...  
Keyword(s):  
Oxidation Process ◽  
Interface Properties ◽  
Direct Oxidation ◽  
Mos Capacitor
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